Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0<r?0.3a.

Abstract: A laser device has a photonic crystal surface emitting laser (PCSEL) element. At a first lateral side of the PCSEL element, a reflector is arranged to reflect back into the PCSEL element at least a portion of light travelling out of the PCSEL element through the first lateral side of the PCSEL element. Between the first lateral side of the PCSEL element and the reflector there is interposed an electrically controllable light-transmission region configured to control the transmission of light from the PCSEL element to the reflector, based on an electrical input. Also disclosed is a method of operation of a corresponding laser device.

Abstract: An ultrafast electro-optic laser makes a stabilized comb and includes: a comb generator that produces a frequency comb; a dielectric resonant oscillator; a phase modulator in communication with the dielectric resonant oscillator; an intensity modulator in communication with the phase modulator; an optical tailor in communication with the comb generator and that produces tailored light; a filter cavity in communication with the intensity modulator; a pulse shaper in communication with the filter cavity; a highly nonlinear fiber and compressor in communication with the pulse shaper; an interferometer in communication with the optical tailor and that produces a difference frequency from the tailored light; and an electrical stabilizer in communication with the interferometer and the comb generator and that produces the stabilization signal with a stabilized local oscillator cavity that produces a stabilized local oscillator signal that is converted into the stabilization signal and communicated to the dielectric

Abstract: A light source device includes a laser diode configured to emit a laser light used as an illumination light, a determination unit configured to determine one of a plurality of modes as an operation mode of the laser diode based on usage state of the light source device; and a driver configured to drive the laser diode in a condition that a bias current to the laser diode is applied depending on the operation mode determined by the determination unit.

Abstract: A laser system has a fiber cable, a pump enclosure connected to the fiber cable outside of the pump enclosure, and a laser-head enclosure connected to the fiber cable disposed outside of the laser-head enclosure. The pump enclosure houses a fiber-coupled laser diode configured to produce and convey pump light through the pump enclosure out to the fiber cable. The laser-head enclosure houses a crystal. The pump light, when produced by the laser diode, propagates out from the pump enclosure through the fiber cable into the laser-head enclosure and into the crystal. The crystal produces a laser beam in response to the pump light. The integrated fiber of the laser diode, the fiber cable, and internal fiber of the laser-head enclosure, through which the pump light propagates, may be single-mode fibers, to achieve superior laser system performance with lower frequency and intensity noise than pumping through multimode fibers.

Abstract: A semiconductor laser device includes: a first conductivity side semiconductor layer, an active layer; and a second conductivity side semiconductor layer. The second conductivity side semiconductor layer includes a first semiconductor layer and a second semiconductor layer, the first semiconductor layer being closer to the active layer than the second semiconductor layer is. The second semiconductor layer defines a width of a current injection region for injecting current into an optical waveguide. The current injection region includes a width varying region in which a width varies. S1>S2, where S1 denotes a width of the width varying region on a front end face side, and S2 denotes a width of the width varying region on a rear end face side.

Abstract: A multi-wavelength integrated device (5) including plural semiconductor lasers (6) and plural modulators (7) modulating output beams of the plural semiconductor lasers (6) respectively is mounted on the stem (1). Plural leads (10) penetrates through the stem (1) and are connected to the plural semiconductor lasers (6) and the plural modulators (7) respectively. Each lead (10) is a coaxial line in which plural layers are concentrically overlapped with one another. The coaxial line includes a high frequency signal line (12) transmitting a high frequency signal to the modulator (7), a GND line (14), and a feed line (16) feeding a DC current to the semiconductor laser (6). The high frequency signal line (12) is arranged at a center of the coaxial line. The GND line (14) and the feed line (16) are arranged outside the high frequency signal line (12).

Abstract: A silicon photonic chip includes a silicon on insulator wafer and an electro-optical device on the silicon on insulator wafer. The electro-optical device is a lateral current injection electro-optical device that includes a slab having a pair of structured doped layers of III-V semiconductor materials arranged side-by-side in the slab, the pair of structured doped layers includes an n-doped layer and a p-doped layer, each of the p-doped layer and the n-doped layer is configured as a two-dimensional photonic crystal. A separation section extends between the pair of structured doped layers, the separation section fully separates the p-doped layer from the n-doped layer. The separation section includes current blocking trenches, and an active region of III-V semiconductor gain materials between the current blocking trenches that form a photonic crystal cavity.

Abstract: A nitride semiconductor laser includes: a first nitride semiconductor layer; a light-emitting layer formed on the first nitride semiconductor layer and including a nitride semiconductor; a second nitride semiconductor layer formed on the light-emitting layer and having a ridge portion; an electrode component formed on the second nitride semiconductor layer, and which is wider than the ridge portion; and a dielectric layer formed on side surfaces of the ridge portion and including SiO2. A space is present between the electrode component and the dielectric layer, and the electrode component is prevented from being in contact with the dielectric layer by the space, and is in contact with the upper surface of the ridge portion.

Abstract: Described herein are methods for developing and maintaining pulses that are produced from compact resonant cavities using one or more Q-switches and maintaining the output parameters of these pulses created during repetitive pulsed operation. The deterministic control of the evolution of a Q-switched laser pulse is complicated due to dynamic laser cavity feedback effects and unpredictable environmental inputs. Laser pulse shape control in a compact laser cavity (e.g., length/speed of light<˜1 ns) is especially difficult because closed loop control becomes impossible due to causality. Because various issues cause laser output of these compact resonator cavities to drift over time, described herein are further methods for automatically maintaining those output parameters.

Abstract: A vertical cavity surface emitting laser includes: a supporting base; and a post including an upper distributed Bragg reflecting region, an active layer, and a lower distributed Bragg reflecting region. The upper distributed Bragg reflecting region, the active layer, and the lower distributed Bragg reflecting region are arranged on the supporting base. The lower distributed Bragg reflecting region includes first semiconductor layers and second semiconductor layers alternately with each of the first semiconductor layers having a refractive index lower than that of each of the second semiconductor layers. The upper distributed Bragg reflecting region includes first layers and second layers alternately with each of the first layers having a group III-V compound semiconductor portion and a group III oxide portion. The group III-V compound semiconductor portion contains aluminum as a group III constituent element, and the group III oxide portion surrounds the group III-V compound semiconductor portion.

Abstract: A laser machining apparatus has a machining head connected to a laser oscillator having a plurality of current control units, a plurality of laser diode modules, a plurality of cavities, and a beam combiner, and performs machining by outputting light from the machining head under the control of the control unit. The laser machining apparatus includes: a current monitor unit which monitors each value of current controlled by the plurality of current control units; a power monitor unit which monitors each value of intensity of light outputted by the plurality of laser diode modules, each value of intensity of light outputted by the plurality of laser cavities, and value of intensity of light outputted by the beam combiner; and a judgment unit that judges a failure location based on values of current monitored by the current monitor unit, and values of intensity of light monitored by the power monitor.

Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

Abstract: Embodiments of the present disclosure are directed towards a laser device with a stepped graded index separate confinement heterostructure (SCH), in accordance with some embodiments. One embodiment includes a substrate area, and an active region adjacent to the substrate area. The active region includes an SCH layer, which comprises a first portion and a second portion adjacent to the first portion. A composition of the first portion is graded to provide a first conduction band energy increase over a distance from multiple quantum wells (MQW) to a p-side of a laser device junction. A composition of the second portion is graded to provide a second conduction band energy increase over the MQW to the p-side distance. The first conduction band energy increase is different than the second conduction band energy increase. Other embodiments may be described and/or claimed.

Abstract: Efficient laser diode excited Thulium (Tm) doped solid state systems, directly matched to a combination band pump transition of Carbon Dioxide (CO2), have matured to the point that utilization of such in combination with CO2 admits effectively a laser diode pumped CO2 laser. The laser diode excited Tm solid state pump permits Continuous Wave (CW) or pulsed energy application. Appropriate optical pumping admits catalyzer free near indefinite gas lifetime courtesy of the absence of significant discharge driven dissociation and contamination. As a direct consequence of the preceding arbitrary multi isotopologue CO2, symmetric and asymmetric, gas mixes may be utilized without significant degradation or departure from initial mix specifications. This would admit, at raised pressure, a system continuously tunable from approximately 9 ?m to approximately 11.5 ?m, or sub picosecond amplification.

Abstract: A QCL may include a substrate, an emitting facet, and semiconductor layers adjacent the substrate and defining an active region. The active region may have a longitudinal axis canted at an oblique angle to the emitting facet of the substrate. The QCL may include an optical grating being adjacent the active region and configured to emit one of a CW laser output or a pulsed laser output through the emitting facet of substrate.

Abstract: A disclosed semiconductor laser device includes a distributed feedback portion serving as a light-emittable active region the distributed feedback portion having a diffraction grating; and a distributed reflective portion serving as a passive reflective mirror, the distributed reflective portion having a diffraction grating, wherein the distributed feedback portion includes a first region adjacent to the distributed reflective portion and having a diffraction grating having a predetermined standard period, a phase shift region adjacent to the first region, the phase shift region being longer by twice or more than the standard period, and a second region adjacent to an opposite side to the first region of the phase shift region and having a diffraction grating with the standard period, and the phase shift region optically changes a phase of laser beam between the first region and the second region.

Abstract: A lateral current injection electro-optical device includes a slab having a pair of structured, doped layers of III-V semiconductor materials arranged side-by-side in the slab, the pair including an n-doped layer and a p-doped layer, each of the p-doped layer and the n-doped layer includes a two-dimensional photonic crystal, and a separation section extending between the pair of structured layers, the separation section separates the pair of structured layers, the separation section includes current blocking trenches, and an active region of III-V semiconductor gain materials between the current blocking trenches that form a photonic crystal cavity.

Abstract: The semiconductor laser module 1 has an electrically conductive heat sink 10, a submount 20 disposed above the heat sink 10, a semiconductor laser device 30 disposed above the submount 20, a lower solder layer 50 disposed between the heat sink 10 and the submount 20, and an upper solder layer 60 electrically connected to the semiconductor laser device 30 and the heat sink 10. This upper solder layer 60 has an electric resistivity lower than an electric resistivity of the submount 20 and extends along surfaces 21 and 22 of the submount 20 to the heat sink 10.

Abstract: A nitride-based light-emitting device includes, on a GaN substrate: a first-conductivity-side first semiconductor layer; an active layer; and a second-conductivity-side first semiconductor layer, in the stated order, and further includes an electron barrier layer of a second conductivity type between the active layer and the second-conductivity-side first semiconductor layer, the electron barrier layer including a nitride-based semiconductor containing at least Al. The electron barrier layer has a first region in which an Al composition changes. The Al composition in the first region monotonically increases in a direction from the active layer to the second-conductivity-side first semiconductor layer. An impurity concentration in the second-conductivity-side first semiconductor layer is lower in a region nearer the electron barrier layer than in a region farther from the electron barrier layer.