Abstract: The present invention includes a semiconductor device having a layer including an elemental metal and its conductive metal oxide, wherein the layer is capable being oxidized or reduced preferentially to an adjacent region of the device. The present invention also includes processes for forming the devices. Substrate regions, silicon-containing layers, dielectric layers, electrodes, barrier layers, contact and via plugs, interconnects, and ferroelectric capacitors may be protected by and/or formed with the layer. Examples of elemental metals and their conductive metal oxides that may be used with the present invention are: ruthenium and ruthenium dioxide, rhenium and rhenium dioxide, iridium and iridium dioxide, osmium and osmium tetraoxide, or the like.

Abstract: A semiconductor switching device having gate-controlled regenerative and non-regenerative conduction modes includes a P-N-P-N thyristor and a diverter region in a semiconductor substrate. Regenerative conduction can be initiated by electrically connecting the thyristor's cathode region and first base region in response to a first bias signal. Non-regenerative conduction can also be initiated by electrically connecting the thyristor's second base region to the diverter region in response to a second bias signal, after regenerative conduction has been initiated. Alternative, non-regenerative conduction can be initiated by electrically connecting the thyristor's second base region to the diverter region and then electrically connecting the thyristor's first base region to the cathode region.

Abstract: A semiconductor device having a CMIS structure for forming a static random access memory is disclosed which device can increase the packing density of the memory and reduce the stand-by power thereof. In this semiconductor device, a first MISFET of a first conductivity type is formed on and a substrate, a second MISFET of a second conductivity type is formed over the first MISFET with a first insulating film therebetween to form a stacked CMIS structure. The second MISFET is made up of a first conductive film, a second insulating film and a second conductive film, with the source, drain and channel regions of the second MISFET being formed in the first conductive film. A first resistive drain region is formed between the channel and drain regions of the first conductive film so that an impurity of the second conductivity type is contained in the first resistive drain region at a lower concentration than in the drain region, or the first resistive drain region is substantially undoped.

Abstract: A resin-encapsulated semiconductor device is of the structure wherein a silicon chip on a die pad is encapsulated with a molding resin. The rear surface of the die pad remote from the silicon chip, preferably the entire surfaces of the elements are treated with a primer, typically a silane coupling agent and a low stress epoxy resin encapsulant is used, preventing the encapsulating resin from separating and cracking upon subsequent dipping in solder bath.