Patents Examined by Edward Wojkciechowicz
  • Semiconductor device and a method of fabricating the same
    Patent number: 5341014
    Abstract: A semiconductor device of the present invention includes a semiconductor substrate, a p-type impurity diffused region formed in the semiconductor substrate, and a polycide interconnection electrically connected to the p-type impurity diffused region. In the semiconductor device, the polycide interconnection includes a first polysilicon film, a refractory metal silicide film formed on the first polysilicon film, and a second polysilicon film formed on the refractory metal silicide film.
    Type: Grant
    Filed: December 11, 1992
    Date of Patent: August 23, 1994
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Toyokazu Fujii, Yasushi Naito