Abstract: The present invention disclosed herein relates to a substrate processing method, and more particularly, to: a substrate processing method in which a flow rate of a process gas in a depressurizing operation is regulated in a pressure changing process for improving properties of a thin film; a substrate processing apparatus using the substrate processing method; and a semiconductor manufacturing method.

Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.

Abstract: A method for manufacturing a coated lens by applying at least one single electromagnetic pulse to convert a coating precursor material into at least one coating. The electromagnetic pulse is delivered to the coating precursor material applied on a surface of an uncoated or precoated optical lens substrate. The at least one single electromagnetic pulse is applied from an electromagnetic source such as a flash lamp, a halogen lamp, a directed plasma arc, a laser, a microwave generator, an induction heater, an electron beam, a stroboscope, or a mercury lamp.

Abstract: A method of manufacturing a sterile stack of peelable lenses includes coating a first lens (or stack of lenses) with a first adhesive coating, heating the first adhesive coating to initiate curing, exposing the first adhesive coating to ultraviolet light to continue curing, laminating a second lens (or stack of lenses) onto a surface of the first adhesive coating to produce a stack of lenses, coating the second lens with a second adhesive coating, heating the second adhesive coating to initiate curing, exposing the second adhesive coating to ultraviolet light to continue curing, laminating a third lens (or stack of lenses) onto a surface of the second adhesive coating to add the third lens to the stack of lenses, and exposing the stack of lenses to an electron beam to continue curing of the first and second adhesive coatings.

Abstract: A method for manufacturing a spectacle lens having a lens substrate and at least one coating is disclosed. The method includes providing a lens substrate having an uncoated or precoated front surface and an uncoated or precoated back surface, applying at least one coating to at least one of the surfaces of the lens substrate, the surface of the at least one coating being modifiable when contacted with at least one medium able to modify the surface of the at least one coating, contacting the surface of the at least one coating, partially or completely, with the at least one medium, considering the individual peripheral refraction, obtaining the spectacle lens having the lens substrate and the at least one coating, the surface of the at least one coating being modified according to the individual peripheral refraction.

Abstract: Methods for forming a polycrystalline molybdenum film over a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; depositing a nucleation film directly on an exposed surface of the substrate, wherein the nucleation film comprises one of a metal oxide nucleation film or a metal nitride nucleation film; and depositing a polycrystalline molybdenum film directly on the nucleation film; wherein the polycrystalline molybdenum film comprises a plurality of molybdenum crystallites having an average crystallite size of less than 80 ?. Structures including a polycrystalline molybdenum film disposed over a surface of a substrate with an intermediate nucleation film are also disclosed.

Abstract: A method of forming a molybdenum film by oxidation and reduction is disclosed. A molybdenum oxide film is formed by CVD or ALD using a halide free organometallic molybdenum precursor. The molybdenum oxide film contains low amounts of carbon impurities. The molybdenum oxide film is reduced to form a highly pure molybdenum film. The molybdenum film has low resistance and properties similar to bulk molybdenum.

Abstract: A film forming method is a method of forming a film on a substrate top face including a first region in which a metal or a semiconductor is exposed and a second region in which an insulator is exposed. The method includes a SAM forming process of forming a self-assembled monolayer film of a perfluoropolyether group-containing compound on the first region and a film growth process of forming a predetermined film on the second region after execution of SAM forming process.

Abstract: A coating of spectacle lenses is applied by physical vapor deposition (PVD). A method for physical vapor deposition includes: providing a crucible containing a first evaporation material and a second evaporation material, wherein the first evaporation material has a first vapor pressure and the second evaporation material has a second vapor pressure different from the first vapor pressure. A ratio of an exposed surface of the first evaporation material and an exposed surface of the second evaporation material in the crucible is adapted to counterbalance the difference in vapor pressure between the first and the second evaporation material. Concurrent evaporation of the first evaporation material and the second evaporation material from the same crucible take place. The disclosure further relates to a crucible for physical vapor deposition and a physical vapor deposition system in particular for coating an optical surface such as a spectacle lens.

Abstract: Systems and method for producing graphene on a substrate are described. Certain types of exemplar systems include lateral arrangements of a substrate gas scavenging environment and an annealing environment. Certain other types of exemplar systems include lateral arrangements of a graphene producing environment and a cooling environment, which cools the graphene produced on the substrate. Yet other types of exemplar systems include lateral arrangements of a localized annealing environment, localized graphene producing environment and a localized cooling environment inside the same enclosure. Certain type of exemplar methods for producing graphene on a substrate include scavenging a first portion of the substrate and preferably, contemporaneously annealing a second portion of the substrate.

Abstract: Systems and method for producing graphene on a substrate are described. Certain types of exemplar systems include lateral arrangements of a substrate gas scavenging environment and an annealing environment. Certain other types of exemplar systems include lateral arrangements of a graphene producing environment and a cooling environment, which cools the graphene produced on the substrate. Yet other types of exemplar systems include lateral arrangements of a localized annealing environment, localized graphene producing environment and a localized cooling environment inside the same enclosure. Certain type of exemplar methods for producing graphene on a substrate include scavenging a first portion of the substrate and preferably, contemporaneously annealing a second portion of the substrate.

Abstract: Methods for forming an Indium-containing film by a vapor deposition method using a heteroalkylcyclopentadienyl Indium (I) precursor having a general formula: In[R1R2R3R4CpL1] or In[CpL1L2y] wherein Cp represents a cyclopentadienyl ligand; R1 to R4 are each independently H, C1-C4 linear, branched or cyclic alkyls; L1 and L2 are each independently a substituent bonded to the Cp ligand and consisting of an alkyl chain containing at least one heteroatom, such as Si, Ge, Sn, N, P, B, Al, Ga, In, O, S, Se, Te, F, Cl, Br, I; and y=1-4. Examplary heteroalkylcyclopentadienyl Indium (I) precursors include In(Cp(CH2)3NMe2) or In(CpPiPr2).

Abstract: The sequential infiltration synthesis (SIS) and Atomic Layer Deposition (ALD) of metal and/or metal oxides on personal medical equipment (PPE). The deposited metal and/or metal oxides imbues antimicrobial properties to the PPE.

Abstract: Systems and method for producing graphene on a substrate are described. Certain types of exemplar systems include lateral arrangements of a substrate gas scavenging environment and an annealing environment. Certain other types of exemplar systems include lateral arrangements of a graphene producing environment and a cooling environment, which cools the graphene produced on the substrate. Yet other types of exemplar systems include lateral arrangements of a localized annealing environment, localized graphene producing environment and a localized cooling environment inside the same enclosure. Certain type of exemplar methods for producing graphene on a substrate include scavenging a first portion of the substrate and preferably, contemporaneously annealing a second portion of the substrate.

Abstract: Exemplary methods of semiconductor processing may include forming a silicon oxide material on exposed surfaces of a processing region of a semiconductor processing chamber. The methods may include forming a silicon nitride material overlying the silicon oxide material. The methods may include performing a deposition process on a semiconductor substrate disposed within the processing region of the semiconductor processing chamber. The methods may include performing a chamber cleaning process.

Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.

Abstract: Molybdenum-containing films are deposited on semiconductor substrates using reactions of molybdenum-containing precursors in ALD and CVD processes. In some embodiments, the precursors can be used for deposition of molybdenum metal films with low levels of incorporation of carbon and nitrogen. In some embodiments, the films are deposited using fluorine-free precursors in a presence of exposed silicon-containing layers without using etch stop layers. The precursor, in some embodiments, is a compound that includes molybdenum, at least one halogen that forms a bond with molybdenum, and at chamber least one organic ligand that includes an element selected from the group consisting of N, O, and S, that forms a bond with molybdenum, In another aspect, the precursor is a molybdenum, compound with at least one sulfur-containing ligand, and preferably no molybdenum-carbon bonds.

Abstract: A process for gas phase deposition of a metal or metal nitride film on a surface substrate comprises: reacting a metal-oxo or metal oxyhalide precursor with an oxophilic reagent in a reactor containing the substrate to deoxygenate the metal-oxo or metal oxyhalide precursor, and forming the metal or metal nitride film on the substrate through a vapor deposition process. The substrate is exposed to the metal oxyhalide precursor and the oxophilic reagent simultaneously or sequentially. The substrate is exposed to a reducing agent sequentially after deoxygenation.

Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.

Abstract: A surface coating configured to locally enhance ultraviolet light density of ultraviolet light incident on the surface coating. The surface coating includes a dielectric layer, a conductive layer on the dielectric layer, a series of nano-openings in the dielectric layer and the conductive layer, a series of nano-antennae in the series of nano-openings, and a dielectric gap between the series of nano-antennas and the conductive layer. The conductive layer and the nano-antennae both include a UV plasmonic material.