Patents Examined by Elizabeth Burkhart
  • Patent number: 10961123
    Abstract: Methods and devices to synthesize vertically aligned carbon nanotube (VACNT) arrays directly on a catalytic conductive substrate without addition of an external metallic catalyst layer and without any pretreatment to the substrate surface using a plasma enhanced chemical vapor deposition (PECVD) method are provided. A method comprises providing a catalytic conductive substrate, that has not been pretreated through a plasma enhanced chemical vapor deposition (PECVD) method or other methods, to a PECVD device, etching the catalytic conductive substrate to form catalytically active nano-features on the surface of the catalytic conductive substrate, and growing vertically aligned carbon nanotubes on the surface of the catalytic conductive substrate, without an external metallic catalyst layer, by providing a carbon source gas to the catalytic conductive substrate.
    Type: Grant
    Filed: June 10, 2019
    Date of Patent: March 30, 2021
    Assignee: The Florida International University Board of Trustees
    Inventor: Wenzhi Li
  • Patent number: 10955594
    Abstract: The disclosure is directed to a highly reflective multiband mirror that is reflective in the VIS-NIR-SWIR-MWIR-LWIR bands, the mirror being a complete thin film stack that consists of a plurality of layers on a selected substrate. In order from substrate to the final layer, the mirror consists of (a) substrate, (b) barrier layer, (c) first interface layer, (d) a reflective layer, (e) a second interface layer, (f) tuning layer(s) and (g) a protective layer. In some embodiments the tuning layer and the protective layer are combined into a single layer using a single coating material. The multiband mirror is more durable than existing mirrors on light weight metal substrates, for example 6061-Al, designed for similar applications. In each of the five layer types methods and materials are used to process each layer so as to achieve the desired layer characteristics, which aid to enhancing the durability performance of the stack.
    Type: Grant
    Filed: March 9, 2018
    Date of Patent: March 23, 2021
    Assignee: Corning Incorporated
    Inventors: Jason S Ballou, Frederick J Gagliardi, Gary Allen Hart, Timothy R Soucy, Robin Merchant Walton, Leonard Gerard Wamboldt, Jue Wang
  • Patent number: 10947616
    Abstract: In a method for forming a vapor deposition pattern using a vapor deposition mask provided with a plurality of openings corresponding to a pattern that is produced by vapor deposition, and forming a vapor deposition pattern in a vapor deposition target, the method includes a close contact step of disposing the vapor deposition mask on one surface side of the vapor deposition target, disposing a pressing member and a magnetic plate in layer in this order on the other surface side of the vapor deposition target, and bringing the vapor deposition target and the vapor deposition mask into close contact with each other by using magnetism of the magnetic plate, and a vapor deposition pattern forming step of causing a vapor deposition material released from a vapor deposition source to adhere to the vapor deposition target through openings after the close contact step, and forming the vapor deposition pattern in the vapor deposition target.
    Type: Grant
    Filed: April 15, 2016
    Date of Patent: March 16, 2021
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Toshihiko Takeda, Yoshinori Hirobe, Yoshiko Miyadera, Katsunari Obata, Naoto Yamada
  • Patent number: 10941482
    Abstract: A filter device for reducing the amount of non-vaporous components in a vapour stream, including a carbon foam as filter material capable of being penetrated by the vapour stream and arranged in such a way that the only route for the vapour stream to pass the carbon foam is via penetration of the carbon foam. The device is in particular suitable for coating a substrate by physical vapour deposition of the vapour. The homogenous and single phase vapour stream produced by the filter device results in a smooth coated substrate wherein splashes are virtually absent.
    Type: Grant
    Filed: November 27, 2015
    Date of Patent: March 9, 2021
    Assignee: TATA STEEL NEDERLAND TECHNOLOGY B.V.
    Inventors: Daniel Brian Burton, Theodorus Franciscus Jozef Maalman, Edzo Zoestbergen, Colin Commandeur, Petrus Cornelis Jozef Beentjes
  • Patent number: 10937645
    Abstract: The present application discloses forming self-assembled monolayers (SAMs) by exposing the substrate at least twice to SAM precursors with intervening cooling of a substrate.
    Type: Grant
    Filed: July 12, 2018
    Date of Patent: March 2, 2021
    Assignee: ASM IP HOLDING B.V.
    Inventor: Elina Färm
  • Patent number: 10930494
    Abstract: Vapor phase transport systems and methods of depositing perovskite films are described. In an embodiment, a deposition method includes feeding a perovskite solution or constituent powder to a vaporizer, followed by vaporization and depositing the constituent vapor as a perovskite film. In an embodiment, a deposition system and method includes vaporizing different perovskite precursors in different vaporization zones at different temperatures, followed by mixing the vaporized precursors to form a constituent vapor, and depositing the constituent vapor as a perovskite film.
    Type: Grant
    Filed: April 7, 2020
    Date of Patent: February 23, 2021
    Assignee: SWIFT SOLAR INC.
    Inventors: Kevin Alexander Bush, Maximilian Tobias Hoerantner, Tomas Leijtens
  • Patent number: 10927453
    Abstract: A TiN-based film includes TiON films having an oxygen content of 50% or above and TiN films which are laminated alternately on a substrate. In a TiN-based film forming method, a TiON film having an oxygen content of 50 at % or above and a TiN film are alternately formed on a substrate.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: February 23, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Tadahiro Ishizaka, Masaki Koizumi, Masaki Sano, Seokhyoung Hong
  • Patent number: 10929579
    Abstract: A film formation simulation method that enables prediction of the film quality of a film formed on a macro scale is provided. A film formation simulation method including: calculating a position at which each of raw material particles that enter a film formation surface migrates on the film formation surface, on a basis of an activation energy of a surface of the film formation surface, by using a computing device; calculating information regarding a defect of a film including the raw material particles on the film formation surface, on a basis of migration positions of the raw material particles of a predetermined amount, each time the migration positions of the raw material particles of the predetermined amount are calculated; and calculating an activation energy of a surface of the film including the raw material particles, on a basis of the information regarding the defect of the film.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: February 23, 2021
    Assignee: Sony Corporation
    Inventor: Nobuyuki Kuboi
  • Patent number: 10913226
    Abstract: Provided is a spectacle lens endowed with high luminous transmittance as well as adequate polarizing function. A method for manufacturing a spectacle lens, comprising forming a polarizing layer by applying a coating liquid containing 0.04% by mass to 1.5% by mass of a dichroic pigment by a spin coating method at a speed of 200 rpm to 600 rpm on a rubbing-treated surface.
    Type: Grant
    Filed: June 26, 2018
    Date of Patent: February 9, 2021
    Assignee: HOYA LENS THAILAND LTD.
    Inventors: Takumi Goto, Tsuyoshi Inaba
  • Patent number: 10910246
    Abstract: Disclosed herein is a hold checking method for checking whether or not a wafer is held by an electrostatic chuck in loading the wafer to the electrostatic chuck by operating a transfer unit holding the wafer. The hold checking method includes a connecting step of bringing the wafer held by a transfer pad into contact with the electrostatic chuck to thereby connect the transfer pad through the wafer to the electrostatic chuck, and a hold determining step of supplying electric power from a DC power source through first wiring to the electrostatic chuck after performing the connecting step, and next determining that the wafer is held by the electrostatic chuck when the voltage across a resistor inserted in the first wiring has reached a predetermined voltage value.
    Type: Grant
    Filed: July 13, 2017
    Date of Patent: February 2, 2021
    Assignee: DISCO CORPORATION
    Inventor: Kenta Chito
  • Patent number: 10901121
    Abstract: A method of making a laser mirror in which a mirror substrate has at least a one micron size nodular defect includes depositing a planarization layer over the mirror substrate and the nodular defect, depositing a layer of silicon dioxide over the planarization layer, and etching away a portion of the layer of silicon dioxide. The method also includes thereafter, depositing a layer of hafnium dioxide over the layer of silicon dioxide and repeating the steps of depositing a layer of silicon dioxide, etching away a portion of the layer of silicon dioxide, and depositing a layer of hafnium dioxide until the nodular defect is reduced in size a predetermined amount.
    Type: Grant
    Filed: November 7, 2018
    Date of Patent: January 26, 2021
    Assignees: Lawrence Livermore National Security, LLC, Colorado State University Research Foundation
    Inventors: Christopher J. Stolz, James A. Folta, Paul B. Mirkarimi, Regina Soufli, Christopher Charles Walton, Justin Wolfe, Carmen Menoni, Dinesh Patel
  • Patent number: 10900120
    Abstract: Passivation layers to inhibit vapor deposition can be used on reactor surfaces to minimize deposits while depositing on a substrate housed therein, or on particular substrate surfaces, such as metallic surfaces on semiconductor substrates to facilitate selective deposition on adjacent dielectric surfaces. Passivation agents that are smaller than typical self-assembled monolayer precursors can have hydrophobic or non-reactive ends and facilitate more dense passivation layers more quickly than self-assembled monolayers, particularly over complex three-dimensional structures.
    Type: Grant
    Filed: July 12, 2018
    Date of Patent: January 26, 2021
    Assignee: ASM IP HOLDING B.V.
    Inventors: Varun Sharma, Eva Tois
  • Patent number: 10889732
    Abstract: Described herein is a method for coating optical fiber where the coating has been cured by application of a source of monochromatic actinic radiation, such as a light emitting diode, wherein the coating contains a urethane(meth)acrylate oligomer; a (meth)acrylate diluent monomer; a diluent monomer having an electron donating group adjacent to the vinyl group, such as a vinyl ether monomer; and a photoinitiator. Also described are compositions which are capable of undergoing photopolymerization when coated on an optical fiber and when irradiated by a light emitting diode (LED) with improved surface cure and reduced yellowing. Also described are the coated optical fibers produced by such processes and compositions.
    Type: Grant
    Filed: August 17, 2015
    Date of Patent: January 12, 2021
    Assignee: DSM IP ASSETS B.V.
    Inventors: Kangtai Ren, Huimin Cao, Wendell Wayne Cattron
  • Patent number: 10883172
    Abstract: Described herein is a technique capable of improving the quality of a template. According to the technique described herein, there is provided a method of manufacturing a lithography template, including: (a) loading a substrate into a process chamber, the substrate having a pattern region and a non-contacting region at center and peripheral portions thereof, respectively; (b) placing the substrate on a substrate support having a protruding portion and a bottom portion such that a back surface of the non-contacting region of the substrate is supported by the protruding portion; (c) heating the substrate by supplying a first hot gas into a space defined by the protruding portion and the bottom portion while supplying a second hot gas into the process chamber; and (d) processing the substrate after performing (c) by supplying a process gas into the process chamber while supplying the first hot gas into the space.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: January 5, 2021
    Assignee: Kokusai Electric Corporation
    Inventor: Naofumi Ohashi
  • Patent number: 10883167
    Abstract: A crucible, an evaporation source and an evaporation device are disclosed. The crucible includes a crucible body. The crucible body includes: an inner heating layer with a first heater assembly and an outer heating layer with a second heater assembly. The outer heating layer is at a periphery of the inner heating layer, and surrounds the inner heating layer, and a space between the outer heating layer and the inner heating layer defines an accommodation space for a to-be-evaporated material.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: January 5, 2021
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Dejiang Zhao, Guangcai Yuan
  • Patent number: 10870914
    Abstract: A heating device for evaporation, an evaporation device and an evaporation method are provided. The heating device includes: a crucible for holding an evaporation raw material; a movable heating unit which is disposed outside the crucible and can move in the direction perpendicular to a bottom surface of the crucible; and a controller configured to control the height from the movable heating unit to the bottom surface of the crucible.
    Type: Grant
    Filed: July 26, 2016
    Date of Patent: December 22, 2020
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Jiunsung Huang, Xiaoyun Liu, Lankai Yeh
  • Patent number: 10870917
    Abstract: A method of fabricating an foam includes providing a foam comprising a base material. The base material is coated with an inorganic material using at least one of an atomic layer deposition (ALD), a molecular layer deposition (MLD), or sequential infiltration synthesis (SIS) process. The SIS process includes at least one cycle of exposing the foam to a first metal precursor for a first predetermined time and a first partial pressure. The first metal precursor infiltrates at least a portion of the base material and binds with the base material. The foam is exposed to a second co-reactant precursor for a second predetermined time and a second partial pressure. The second co-reactant precursor reacts with the first metal precursor, thereby forming the inorganic material on the base material. The inorganic material infiltrating at least the portion of the base material. The inorganic material is functionalized with a material.
    Type: Grant
    Filed: July 7, 2017
    Date of Patent: December 22, 2020
    Assignee: UChicago Argonne, LLC
    Inventors: Seth B. Darling, Jeffrey W. Elam, Anil U. Mane, Seth W. Snyder
  • Patent number: 10844488
    Abstract: A chuck system for performing a substrate-biased atomic layer deposition process that forms an electrically conductive film on a substrate includes an electrically conductive substrate holder configured to support the substrate and an electrically conductive base that supports the substrate holder. An electrical isolating layer is sandwiched between the substrate holder and the base. The electrical isolating layer has an outer end and an edge recess formed in and that runs around the outer edge. The edge recess is configured to prevent the electrically conductive film from coating the entire interior of the edge recess, thereby maintaining electrical isolation between the substrate holder and the base.
    Type: Grant
    Filed: January 23, 2018
    Date of Patent: November 24, 2020
    Assignee: Veeco Instruments Inc.
    Inventors: Michael J. Sershen, Adam Bertuch
  • Patent number: 10847360
    Abstract: Methods and systems relating to processes for treating a silicon nitride film on a workpiece including supporting the workpiece in a chamber, introducing an amine gas into the chamber and establishing a pressure of at least 5 atmospheres, and exposing the silicon nitride film on the workpiece to the amine gas while the pressure in the chamber is at least 5 atmospheres.
    Type: Grant
    Filed: May 25, 2017
    Date of Patent: November 24, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Keith Tatseun Wong, Sean Kang, Srinivas D. Nemani, Ellie Y. Yieh
  • Patent number: 10830925
    Abstract: The invention concerns a method for producing an optical article suitable for edging comprising an antifouling layer on which there is deposited a temporary overlayer for assisting with edging, comprising: depositing, on an optical substrate, an organic antifouling layer comprising at least a fluorinated polymer compound comprising hydrolysable functions; and depositing, on the antifouling layer, an overlayer for assisting with edging, of mineral nature, comprising one or more metal fluorides and/or one or more metal oxides or hydroxides; method characterised in that it further comprises a step of accelerated grafting of the antifouling layer chosen from: (a) a treatment of the deposited antifouling layer in a humid atmosphere of the deposited antifouling layer and (b) a catalytic treatment in the acidic or basic vapour phase of the deposited antifouling layer.
    Type: Grant
    Filed: August 4, 2015
    Date of Patent: November 10, 2020
    Assignee: Essilor International
    Inventors: Grégory Hervieu, Christophe Valenti, Pierre-Jean Calba, Nicolas Maitre