Abstract: A storage device includes a controller that can dynamically adjust the zone active limit (ZAL) for a zoned namespace (ZNS). Rather than assuming a worst-case scenario for the ZNS, the ZAL can be dynamically adjusted, even after providing the ZAL to a host device. In so doing, device behavior changes due to factors such as temperature, failed or flipped bit count, and device cycling can be considered as impacting the ZAL. The ZAL can then be adjusted over time, and the new ZAL can be communicated to the host device. As such, rather than a fixed, worst-case ZAL, the host device will receive updated ZAL values over time as the device performs.

Abstract: An electronic device is disclosed. The electronic device comprises a circuit board, a memory part comprising a plurality of first memory chips mounted on the circuit board, a socket part comprising a plurality of terminals electrically connected to a memory module which comprises a plurality of second memory chips, a memory controller for controlling the operation of the plurality of first memory chips and, when the memory module is connected to the socket part, controlling the operation of the plurality of first memory chips and the plurality of second memory chips, a conductive pattern comprising a control line which sequentially connects, from the memory controller, one or more of the plurality of terminals on the socket part and the plurality of first memory chips, and a capacitive element connected to the control line at a preset position between the one or more terminals on the socket part and the memory controller.

Abstract: Systems, apparatuses, and methods related to memory device protection are described. A quantity of errors within a memory device can be determined and the determined quantity can be used to further determine whether to utilize single or multiple memory devices for an error correction and/or detection operation. Multiple memory devices need not be utilized for the error correction and/or detection operation unless a quantity of errors within the memory device exceeds a threshold quantity.

Abstract: A memory apparatus and method of operation are provided. The apparatus includes memory cells each connected to a word line and arranged in one of a plurality of blocks and configured to retain a threshold voltage corresponding to a data state. The memory cells are operable in one of a first read condition in which a word line voltage is discharged and a second read condition in which the word line voltage is coupled up to a residual voltage level. A control circuit determines a power on event and periodically apply a predetermined refresh read voltage to the word line for a predetermined period of time for each of the plurality of blocks at a specified interval based on at least one data retention factor to maintain the memory cells of the plurality of blocks in the second read condition in response to determining the power on event.

Abstract: The present disclosure includes apparatuses and methods related to stopping criteria for layered iterative error correction. A number of methods can include receiving a codeword with an error correction circuit, iteratively error correcting the codeword with the error correction circuit including parity checking the codeword on a layer-by-layer basis and updating the codeword after each layer. Methods can include stopping the iterative error correction in response to a parity check being correct for a particular layer.

Abstract: A controller determines whether or not a read threshold voltage, other than a history read threshold voltage being a read threshold voltage that was used in previously successful read operation, is to be used for a next read operation, based on a fail bit count associated with the read operation, an error correction capability of a decoder and utilization of a queue in the decoder. When it is determined that the history read threshold voltage is not to be used for the next read operation, the controller determines fail bit counts associated with read operations on memory cells of a memory device using read threshold voltages. The controller determines an optimal read threshold voltage based on the fail bit counts. The controller transmits, to the memory device, a first command including a parameter associated with setting the optimal read threshold voltage.

Abstract: In one embodiment, a system includes a processor, and logic integrated with the processor, executable by the processor, or integrated with and executable by the processor. The logic is configured to cause the processor to write, by the processor, data to a storage medium of a data storage system using a partial reverse concatenated modulation code. The partial reverse concatenated modulation code comprises encoding the data by applying a C2 encoding scheme prior to encoding the data by applying one or more modulation encoding schemes, followed by encoding the data by applying a C1 encoding scheme subsequent to the encoding of the data with the one or more modulation encoding schemes.

Abstract: Embodiment techniques map parity bits to sub-channels based on their row weights. In one example, an embodiment technique includes allocating, from a set of sub-channels, one or more sub-channels for one or more parity bits based on row weights for sub-channels in a subset of sub-channels within the set of sub-channels, mapping information bits to remaining sub-channels in the set of sub-channels based on a reliability of the remaining sub-channels without mapping any of the information bits to the one or more sub-channels allocated for the one or more parity bits, polar encoding the information bits and the one or more parity bits based on at least the mapping of the information bits to the remaining sub-channels to obtain encoded bits, and transmitting the encoded bits to another device.

Abstract: A semiconductor memory device including: a buffer die; memory dies stacked on the buffer die; and TSVs, at least one of the memory dies includes: a memory cell array; an error correction code (ECC) engine; an error information register; and a control logic circuit configured to control the ECC engine to perform a read-modify-write operation, wherein the control logic circuit is configured to: record, in the error information register, a first address associated with a first codeword based on the an generation signal and a first syndrome obtained by an ECC decoding; and determine an error attribute of the first codeword based on a change of the first syndrome, recorded in the error information register, based on a plurality of read-modify-write operations.

Abstract: An access method is provided, which is applied to a memory device. The memory device is coupled to a host device, the host device is configured to provide a data, the memory device includes a SSD controller and a volatile memory, the volatile memory is coupled to the SSD controller, and the volatile memory includes a data storage area. The access method includes: the SSD controller receiving the data, the SSD controller generating a corresponding cyclic redundancy check code according to the data, and the SSD controller sequentially storing the data and the cyclic redundancy check code into the data storage area.

Abstract: A read method of a nonvolatile memory device is provided. The method includes storing data sensed from selected memory cells of the nonvolatile memory device into a page buffer, performing an error decoding operation by performing error detection on the sensed data to detect and error, correcting the detected error if the error is detected, and overwriting the page buffer with the corrected data, and de-randomizing data stored in the page buffer by using a seed after the error decoding operation has completed.

Abstract: A controller includes an interface and storage circuitry. The interface is configured to communicate with a memory device that includes multiple memory cells organized in memory blocks. The memory device supporting programming of the memory cells with enabled or disabled program-verification. The storage circuitry is configured to disable the program-verification, and program data to a group of the memory cells in a Single Level Cell (SLC) mode using a single programming pulse, to read the data from the group of the memory cells. In response to detecting a failure in reading the data, the storage circuitry is configured to distinguish between whether the memory cells in the group belong to a defective memory block or were under-programmed, and when identifying that the memory cells in the group were under-programmed, to perform a corrective action to prevent under-programming in subsequent program operations to the memory cells in the group.

Abstract: Techniques for encoding data are described herein. The method includes receiving a block payload at a physical layer to be transmitted via a data bus. The method includes establishing a block header comprising an arrangement of bits, the block header defining two block header types, wherein a hamming distance between block header types is at least four.

Abstract: A memory test circuit comprising: a first latch circuit for receiving a first input address and an error indication signal to generate a first address; a first E-fuse group for receiving the first address to generate an output address; a second latch circuit for receiving the error indication signal; a second E-fuse group for generating an error indication signal according to an output of the second latch circuit which is generated according to the fault indication signal; and a comparison circuit for activating the second latch circuit according to a relation between the first address and a second input address and a state of the first latch circuit or the first E-fuse group.

Abstract: An encoding apparatus is provided. The encoding includes a low density parity check (LDPC) encoder which performs LDPC encoding on input bits based on a parity-check matrix to generate an LDPC codeword formed of 64,800 bits, in which the parity-check matrix includes an information word sub-matrix and a parity sub-matrix, the information word sub-matrix is formed of a group of a plurality of column blocks each including 360 columns, and the parity-check matrix and the information word sub-matrix are defined by various tables which represent positions of value one (1) present in every 360-th column.

Abstract: A semiconductor system includes a first semiconductor device and a second semiconductor device. The first semiconductor device outputs an error check enablement signal, an input clock signal, and input data to the second semiconductor device. The first semiconductor device receives an error check signal from the second semiconductor device. The second semiconductor device performs an error check operation for the input data based on the error check enablement signal and the input clock signal to generate the error check signal which is enabled when an error in the input data occurs.

Abstract: A transmitting apparatus is disclosed. The transmitting apparatus includes an encoder to perform channel encoding with respect to bits and generate a codeword, an interleaver to interleave the codeword, and a modulator to map the interleaved codeword onto a non-uniform constellation according to a modulation scheme, and the constellation may include constellation points defined based on various tables according to the modulation scheme.

Abstract: Read parameter estimation techniques are provided that obtain information from multiple read operations to customize read parameters for data recovery. One method comprises performing the following steps, in response to a decoding failure of a page of a memory or a codeword of the memory: obtaining at least three read values of the page or codeword; and processing the at least three read values to determine read parameters comprising: (i) a log likelihood ratio, and/or (ii) a center read reference voltage, wherein the determination is based on a signal count of a number of bits falling in particular regions of multiple regions of the memory and wherein the determined read parameters are used for a decoding of the page or codeword following the decoding failure and/or a subsequent read operation following a successful decoding of the page or codeword.

Abstract: A method of operating a transmission system (1) having a first network (2) and at least one second network (3) where data is exchanged in that data of the first network (2) is inputted between these at least two networks (2, 3) into duplication means (4), and the inputted data is transmitted wirelessly via at least two transmission paths (6, 7) using PRP to separator means (5) and forwarded from the separating means (5) to the connected second network (3), characterized in that the data is transmitted as data packets and each data packet is transmitted several times via the same transmission path (6, 7).

Abstract: A network interface groups and encodes a plurality of bits into a plurality of bit blocks such that a number of bits within the fixed-length frame are available for use as parity bits in a fixed-length frame. The network interface device aggregates a first set of bit blocks and a second set of bit blocks into an aggregated bit block, and encodes a portion of the aggregated bit block using a first encoder to generate a first set of encoded bits according to a first error correction encoding scheme. The network interface device encodes a remaining portion of the aggregated bit block using a second encoder to generate a second set of encoded bits according to a second error correction encoding scheme. A number of parity bits generated by the first and second encoders does not exceed the number of bits in the fixed-length frame made available for use as parity bits.