Abstract: Cleaning system and method for paint rollers uses a liquid container. A plurality of cage shafts extend into an interior of the container. Each cage shaft supports a cage which is sized and shaped for holding a tubular paint roller. A drive system is configured to mechanically couple a drive shaft to each of the plurality of cage shafts. Rotation of the drive shaft causes a concurrent rotation of the plurality of cage shafts within the container to facilitate cleaning and drying operations.

Abstract: In one aspect, a process operation is conducted at a first pressure in a process chamber, and an epitaxial deposition operation is conducted at an atmospheric pressure in an epitaxial deposition chamber. The atmospheric pressure is greater than the first pressure. The process chamber is mounted to a first mainframe that operates at the first pressure (a reduced pressure), and the epitaxial deposition chamber is mounted to a second mainframe that operates at the atmospheric chamber. In one aspect, the process chamber is a cleaning chamber (such as a pre-clean chamber) and the process operation is a cleaning operation. In one aspect, the process chamber is an atmospheric pressure epitaxial deposition chamber and the process operation is an atmospheric pressure epitaxial deposition operation.

Abstract: A substrate processing method is provided, which includes: a sulfuric acid immersing step of immersing a plurality of substrates in a sulfuric acid-containing liquid within a sulfuric acid vessel; a transporting step of taking out the substrates from the sulfuric acid vessel and transporting the substrates to an ozone gas treatment unit; and an ozone exposing step of exposing the substrates transported to the ozone gas treatment unit to an ozone-containing gas. The ozone gas treatment unit may include a gas treatment chamber which accommodates the substrates. The ozone exposing step may include the step of placing the substrates taken out of the sulfuric acid vessel in a treatment space within the gas treatment chamber to expose the substrates to the ozone-containing gas.

Abstract: A polymer handling method for a polycrystalline silicon manufacturing device, wherein the polymer byproducts are treated in a manner that the silicon polymers are hydrolyzed. The method creates a heated treatment gas with a moisture content that both treats the polymer to a depth of about 0.25 mm to prohibit formation of the friction and shock sensitive layer near the polymer surface and keeps the hydrolyzed polymer humidified. Furthermore the polymer handling method includes inactivation of the polymer, removal of the polymer of the system and disposal of the polymer after removal.

Abstract: Provided is a vacuum processing method capable of preventing particles from adhering to a wafer due to a titanium (Ti)-based reaction product. The vacuum processing method is applicable to a plasma processing apparatus including: a sample stage disposed in a processing chamber inside a vacuum container, on which a wafer having a titanium (Ti)-containing film is placed; a coil supplied with a radio frequency power for forming plasma in the processing chamber; and a heating device that emits an electromagnetic wave for heating the wafer placed on an upper surface of the sample stage. The vacuum processing method includes a step of etching the titanium (Ti)-containing film, and a step of cleaning an inside of the processing chamber by using a mixed gas of nitrogen trifluoride (NF3) gas, argon gas, and a chlorine gas.

Abstract: A method of cleaning a collector of an extreme ultraviolet light source system includes introducing the collector separated from the extreme ultraviolet light source system into a chamber; capturing an optical image of a reflective surface of the collector; measuring a contamination level of the reflective surface by comparing the optical image with a prestored standard image; performing a first cleaning operation if the contamination level exceeds a preset first reference value, the first cleaning operation including cleaning the reflective surface by spraying dry ice particles onto the reflective surface; and performing a second cleaning operation if the contamination level is less than or equal to the preset first reference value. The second cleaning operation includes cleaning the reflective surface by radiating atmospheric plasma onto the reflective surface and measuring a microcontamination level and a damage level of the reflective surface.

Abstract: A method of cleaning a semiconductor wafer includes: loading a semiconductor wafer into a cell having an annular trough; moving a plurality of nozzles into operational orientations for spraying a cleaning solution onto a top surface of the loaded semiconductor wafer; spraying the cleaning solution from each nozzle onto the top surface of the loaded semiconductor wafer in a direction defined by each nozzle's operational orientation such that a patterned flow of cleaning solution is formed on the top surface of the loaded semiconductor wafer; and collecting the cleaning solution in the annular trough of the cell as it flows off the top surface of the loaded semiconductor wafer.

Abstract: Disclosed are a substrate treating apparatus and a substrate treating method. According to an embodiment of the inventive concept, the purge operation of the purge nozzle is performed while the nozzle arm is moved from the first substrate support member to the second substrate support member, it hardly influences the operation of treating the substrate while the nozzle arm is moved from the first substrate support member to the second substrate support member. According to an embodiment of the inventive concept, the substrate treating apparatus may perform an operation of purging the photosensitive liquid nozzle while the treatment liquid supply unit performs a process of supplying the photosensitive liquid to the substrate. Accordingly, because the operation of purging the photosensitive liquid nozzle is performed at the same time when the substrate treating apparatus performs a process, productivity may be improved.

Abstract: A substrate processing method for removing an organic film on a substrate includes a) carrying out introduction of ozone-containing gas into a substrate processing chamber to fill at least a space above the substrate in the substrate processing chamber with ozone-containing gas, b) starting spraying through the space a heated chemical liquid containing sulfuric acid onto the substrate after the a), c) continuing the spraying started in the b), and d) stopping the spraying continued in the c).

Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

Abstract: The present invention provides a method for cleaning substrates comprising the steps of: placing a substrate on a substrate holder; implementing a bubble less or bubble-free pre-wetting process for the substrate; and implementing an ultra/mega sonic cleaning process for cleaning the substrate.

Abstract: The present application relates to a method for removing a particle from a photolithographic mask, including the following steps: (a) positioning a manipulator, which is movable relative to the mask, in the vicinity of the particle to be removed; (b) connecting the manipulator to the particle by depositing a connecting material on the manipulator and/or the particle from the vapor phase; (c) removing the particle by moving the manipulator relative to the photolithographic mask; and (d) separating the removed particle from the manipulator by carrying out a particle-beam-induced etching process which removes at least a portion of the manipulator.

Abstract: A method of cleaning a plasma processing apparatus includes: disposing a first dummy substrate at a first position with respect to a stage inside a chamber and performing a first dry cleaning process inside the chamber; and disposing a second dummy substrate at a second position with respect to the stage inside the chamber and performing a second dry cleaning process inside the chamber, wherein each of a center of the first position and a center of the second position is located at a different position from a center of the stage in a plan view, and wherein the first position and the second position are different from each other in a plan view.

Abstract: A method of cleaning a stage in a plasma processing apparatus including the stage on which a substrate is placed, a lifting mechanism configured to raise and lower the substrate with respect to the stage, and a high-frequency power supply connected to the stage, includes: separating the stage and the substrate from each other using the lifting mechanism; and after the separating the stage and the substrate from each other, removing a deposit deposited on the stage with plasma generated by supplying a high-frequency power from the high-frequency power supply to the stage. In the separating the stage and the substrate from each other, a separation distance between the stage and the substrate is set such that a combined impedance formed around an outer peripheral portion of the stage is lower than a combined impedance formed immediately above a central portion of the stage.

Abstract: A method for cleaning a substrate processing apparatus includes mounting a substrate on a mounting portion of an electrostatic chuck of the substrate processing apparatus to process the substrate; mounting a protector including a small diameter portion that covers the mounting portion and a large diameter portion that is disposed apart from an edge ring disposed on an outer periphery of the mounting portion and has a diameter larger than that of the small diameter portion, on the mounting portion; and supplying a cleaning gas, thereby removing by-products deposited between the mounting portion and the edge ring.

Abstract: A device capable of determining whether or not to clean a work area of a machine tool with higher accuracy. The device includes an imaging device configured to capture first image data of the work area before machining, and configured to capture second image data of the work area after machining, an image data generation section configured to generate third image data indicating a degree of change between brightness of a pixel of the first image data and brightness of a pixel of the second image data, and a determination section configured to determine whether or not to clean the work area based on a histogram indicating a relationship between the brightness of the pixel of the third image data and the number of pixels of the third image data.

Abstract: A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

Abstract: A sensor assembly includes a sensor including a sensor lens, a casing mounted to the sensor, and a fluid nozzle mounted to the casing. The casing at least partially defines a duct positioned to outlet airflow across the sensor lens, and the duct defines a direction of airflow. The fluid nozzle is aimed through the duct in the direction of airflow.

Abstract: A spray booth for spraying pieces to be painted with a painting product includes a system that conveys the pieces to be painted inside the booth, a supplying circuit that supplies a painting product or solvent to painting tools, a plenum, a mobile wall providing access to the inside of the spray booth, optionally a reading system for the pieces to be painted, optionally a filtering system, a plurality of spraying tools that include one or more a spray guns each placed on an independent arm moving on a plane and optionally in a vertical direction, one or more cleaning stations, placed in correspondence of the mobile wall and provided with a drawer that is mobile between rest and a cleaning positions and that includes a painting product or solvent draining tube having a mouth, a slot for supplying compressed air, and a brush for brushing the spray guns.

Abstract: The present invention discloses a method for cleaning substrate without damaging patterned structure on the substrate using ultra/mega sonic device, comprising: applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device; after micro jet generated by bubble implosion and before said micro jet generated by bubble implosion damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned.