Abstract: A method is provided for forming an integrated circuit (IC) chip package structure. The method includes providing a substrate for an interposer, and forming a conductive interconnect structure in and on the substrate for connecting a group of selected IC dies. The method includes forming warpage-reducing trenches in non-routing regions of the interposer, wherein the warpage-reducing trenches are sized and positioned based on a warpage characteristic to reduce the warpage of the chip package structure. The method also includes depositing a warpage-relief material in the warpage-reducing trenches according to the warpage characteristic to reduce the warpage of the chip package structure, and bonding the group of selected IC dies to the interposer to form a chip package structure.

Abstract: Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first electrode, a second electrode, a gate structure and a temperature sensitive component. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The first electrode, the second electrode and the gate structure are disposed on the second nitride semiconductor layer. The temperature sensitive component is disposed external to a region between the gate structure and the first electrode along a first direction in parallel to an interface of the first nitride semiconductor layer and the second nitride semiconductor layer.

Abstract: Methods and apparatus for a signal isolator having enhanced creepage characteristics. In embodiments, a signal isolator IC package comprises a leadframe including a die paddle having a first surface to support a die and an exposed second surface. A die is supported by a die paddle wherein a width of the second surface of the die paddle is less than a width of the die.

Abstract: A wafer stack structure includes an interlayer, a first wafer, and a second wafer. The interlayer has a first surface and a second surface opposite to the first surface. The intermediate layer includes a dielectric material layer and a redistribution layer embedded in the dielectric material layer. The first wafer is disposed on the first surface of the interlayer. The second wafer is disposed on the second surface of the interlayer. The second wafer is electrically connected to the first wafer through the redistribution layer of the interlayer.

Abstract: A package structure includes a semiconductor device and an adhesive pattern. The adhesive pattern surrounds the semiconductor device, wherein an angle ? is formed between a sidewall of the semiconductor device and a sidewall of the adhesive pattern, 0°<?<90° wherein the adhesive layer has a first opening misaligned with a corner of the semiconductor device closest to the first opening.

Abstract: A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.

Abstract: A semiconductor die includes a structural body that has a power region and a peripheral region surrounding the power region. At least one power device is positioned in the power region. Trench-insulation means extend in the structural body starting from the front side towards the back side along a first direction, adapted to hinder conduction of heat from the power region towards the peripheral region along a second direction orthogonal to the first direction. The trench-insulation means have an extension, in the second direction, greater than the thickness of the structural body along the first direction.

Abstract: A semiconductor package including a leadframe has a plurality of leads, and a semiconductor die including bond pads attached to the leadframe with the bond pads electrically coupled to the plurality of leads. The semiconductor die includes a substrate having a semiconductor surface including circuitry having nodes coupled to the bond pads. A mold compound encapsulates the semiconductor die. The mold compound is interdigitated having alternating extended mold regions over the plurality of leads and recessed mold regions in between adjacent ones of the plurality of leads.

Abstract: A semiconductor device includes a bridge and a first integrated circuit. The bridge is free of active devices and includes a first conductive connector. The first integrated circuit includes a substrate and a second conductive connector disposed in a first dielectric layer over the substrate. The second conductive connector is directly bonded to the first conductive connector. The second conductive connector includes conductive pads and first conductive vias and a second conductive via between the conductive pads. The second conductive via is not overlapped with the first conductive vias while the first conductive vias are overlapped with one another. A vertical distance between the second conductive via and the first conductive connector is larger than a vertical distance between each of the first conductive vias and the first conductive connector, and a sidewall of the first dielectric layer is substantially flush with a sidewall of the substrate.

Abstract: An electronic package structure and a method for manufacturing the same are provided. The electronic package structure includes a first electronic component, a second electronic component, an interconnection element, an insulation layer, and an encapsulant. The second electronic component is disposed adjacent to the first electronic component. The interconnection element is disposed between the first electronic component and the second electronic component. The insulation layer is disposed between the first electronic component and the second electronic component and has a side surface and a top surface connecting to the side surface. The encapsulant surrounds the interconnection element and at least partially covers the top surface of the insulation layer and has an extended portion in contact with the side surface of the insulation layer.

Abstract: A stack package and a method of manufacturing the stack package are provided. The method includes: attaching a first semiconductor device onto a first surface of a first package substrate; attaching a molding resin material layer onto a first surface of a second package substrate; arranging the first surface of the first package substrate and the first surface of the second package substrate to face each other; compressing the first package substrate and the second package substrate while reflowing the molding resin material layer; and hardening the reflowed molding resin material layer.

Abstract: A method includes forming a first package component, and forming a first plurality of electrical connectors at a first surface of the first package component. The first plurality of electrical connectors are laid out as having a honeycomb pattern. A second package component is bonded to the first package component, wherein a second plurality of electrical connectors at a second surface of the second package component are bonded to the first plurality of electrical connectors.

Abstract: Disclosed are semiconductor packages and methods of fabricating the same. The semiconductor package comprises a redistribution substrate including dielectric and redistribution patterns, a first substrate pad on the redistribution substrate and penetrating the dielectric pattern to be coupled to the redistribution pattern, a second substrate pad the redistribution substrate and spaced apart from the first substrate pad, a semiconductor chip on the redistribution substrate, a first connection terminal connecting the first substrate pad to one of chip pads of the semiconductor chip, and a second connection terminal connecting the second substrate pad to another one of the chip pads of the semiconductor chip. A top surface of the second substrate pad is located at a higher level than that of a top surface of the first substrate pad. A width of the second substrate pad is less than that of the first substrate pad.

Abstract: A package structure includes a package substrate, a first semiconductor package and a second semiconductor package, an underfill material, a gap filling structure and a heat dissipation structure. The first semiconductor package and the second semiconductor package are electrically bonded to the package substrate. The underfill material is disposed to fill a first space between the first semiconductor package and the package substrate and a second space between the second semiconductor package and the package substrate. The gap filling structure is disposed over the package substrate and in a first gap laterally between the first semiconductor package and the second semiconductor package. The heat dissipation structure is disposed on the package substrate and attached to the first semiconductor package and the second semiconductor package through a thermal conductive layer.

Abstract: A semiconductor device assembly includes a substrate, a first stack of semiconductor dies disposed directly over a first location on the substrate, and a second stack of semiconductor dies disposed directly over a second location on the substrate and electrically coupled to a second subset of the plurality of external connections. A portion of the semiconductor dies of the second stack overlaps a portion of the semiconductor dies of the first stack. The semiconductor device assembly further includes an encapsulant at least partially encapsulating the substrate, the first stack and the second stack.

Abstract: Embodiments of the present disclosure provide a semiconductor package. In one embodiment, the semiconductor package includes a first integrated circuit die having a first circuit design, and the first integrated circuit die comprises a first device layer and a first interconnect structure. The semiconductor package also includes a second integrated circuit die having a second circuit design different than the first circuit design, and the second integrated circuit die comprises a second device layer and a second interconnect structure having a first side in contact with the first device layer and a second side in direct contact with the first interconnect structure of the first integrated circuit die. The semiconductor package further includes a substrate having a first side bonded to the first interconnect structure, wherein the second integrated circuit die is surrounded by at least a portion of the substrate.

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface, and a die secured to the package substrate, wherein the die has a first surface and an opposing second surface, the die has first conductive contacts at the first surface and second conductive contacts at the second surface, and the first conductive contacts are coupled to conductive pathways in the package substrate by first non-solder interconnects.

Abstract: A semiconductor package includes a first connection structure having first and second surfaces and including a first redistribution layer, a first semiconductor chip disposed on the first surface and having a first connection pad electrically connected to the first redistribution layer, a second semiconductor chip disposed around the first semiconductor chip on the first surface and having a second connection pad electrically connected to the first redistribution layer, an interconnection bridge disposed on the second surface to be spaced apart from the second surface and connected to the first redistribution layer through a connection member to electrically connect the first and second connection pads to each other, and a second connection structure disposed on the second surface to embed the interconnection bridge and including a second redistribution layer electrically connected to the first redistribution layer.

Abstract: A nitride semiconductor light-emitting element includes: an n-side nitride semiconductor layer; a p-side nitride semiconductor layer; and an active layer between the n-side nitride semiconductor layer and the p-side nitride semiconductor layer. The active layer includes: one or more well layers comprising a first well layer that is nearest to the n-side nitride semiconductor layer, and one or more barrier layers comprising a first barrier layer between the first well layer and the n-side nitride semiconductor layer. The first barrier layer comprises a Si-doped InGaN barrier layer and an undoped GaN barrier layer in this order from the n-side nitride semiconductor layer side.

Abstract: A semiconductor package includes a redistribution structure, a plurality of semiconductor devices, and a plurality of heat dissipation films. The plurality of semiconductor devices mounted on the redistribution structure. The plurality of heat dissipation films are respectively disposed on and jointly covering upper surfaces of the plurality of semiconductor devices. A plurality of trenches are respectively extended between each two of the plurality of heat dissipations and extended between each two of the plurality of semiconductor devices.