Patents Examined by Evan Pevt
  • Method for providing fluorine barrier layer between conductor and insulator for degradation prevention
    Patent number: 6066577
    Abstract: Method of improving the resistance of a metal against degradation from exposure to fluorine released from a fluorine-containing material by forming a fluorine-free silicon dioxide barrier layer between the insulator material and the metal. The invention is especially useful in improving corrosion and poisoning resistance of metallurgy, such as aluminum metallurgy, in semiconductor structures. The invention also covers integrated circuit structures made by this method.
    Type: Grant
    Filed: September 25, 1997
    Date of Patent: May 23, 2000
    Assignee: International Business Machines Corporation
    Inventors: Edward C. Cooney, III, Hyun K. Lee, Thomas L. McDevitt, Anthony K. Stamper