Abstract: A method for detecting the presence or absence of an ophthalmic lens (10), in particular of a contact lens, within a receptacle (1), including the steps of: detecting infrared radiation coming from at least a portion (3) of the receptacle (1) where the ophthalmic lens (10) is supposedly accommodated, analyzing the detected infrared radiation in a spectral portion in which absorbance (AL) of a material the ophthalmic lens is made of is significantly different from absorbance (AR) of a material the receptacle is made of, and from the analysis of the spectral portion detecting the presence or absence of the ophthalmic lens (10) within the receptacle.

Abstract: A measurement wafer device for measuring radiation intensity and temperature includes a wafer assembly including one or more cavities. The measurement wafer device further includes a detector assembly. The detector assembly is disposed within the one or more cavities of the wafer assembly. The detector assembly includes one or more light sensors. The detector assembly is further configured to perform a direct or indirect measurement of the intensity of ultraviolet light incident on a surface of the wafer assembly. The detector assembly is further configured to determine a temperature of one or more portions of the wafer assembly based on one or more characteristics of the one or more light sensors.

Abstract: A pattern projector disclosed herein generates and projects a structured light pattern suitable for use in a variety of active depth sensing technologies. In one implementation, a structured light pattern is generated by directing a coherent light beam through a pseudorandom diffuser element. Output of the pseudorandom diffuser element is received by a relay optic configured to spatially filter incident light to generate an output speckle illumination and to project the output speckle illumination to a three-dimensional scene.

Abstract: In the present invention, a fluorescent substance detection system (S) for detecting fluorescent substances in any environment is provided. Said detection system (S) comprises at least one illumination unit (1) which emits light to said environment in order to excite said substances; detection units (2), at least at a number equal to the number of types of fluorescent substances, for detecting emissions coming from said excited fluorescent substances and bandpass filters (3), each connected to detection units (2) one by one, wherein bandpass filters (3) have a center wavelength matched to the center emission wavelength of corresponding fluorescent substance.

Abstract: The invention relates to a radiometric measuring device for carrying out measurements in an explosion-prone area, which radiometric measuring device requires only little space at the measurement location and can be economically produced. The radiometric measuring device comprises a measuring unit (7) that can be used in the explosion-prone area. Said measuring unit comprises a scintillator (13), which converts radioactive radiation incident on the scintillator into photons, and a semiconductor detector (15), which is connected to the scintillator (13) and can be operated by means of an inherently safe energy supply and metrologically captures photons arising in the scintillator (13) and reaching the semiconductor detector (15), and converts said photons into electrical measurement signals. Explosion protection measures to be associated exclusively with the ignition protection class of the inherent safety are provided in the measuring unit.

Abstract: A semiconductor device for a system for measuring temperature, which includes a first UV detector and a second UV detector. The first and second UV detectors generate a first current and a second current, respectively, as a function of the irradiance in the ultraviolet band. Moreover, the first and second UV detectors have coefficients of variation of the current with temperature, at constant irradiance, that are different from one another.

Abstract: In a radiation detector, a first segment positioned closest to the other side in a predetermined direction and a second segment positioned closest to the other side in the predetermined direction are optically connected to each other, and the first segments other than the first segment positioned closest to the other side in the predetermined direction and the second segments other than the second segment positioned closest to the other side in the predetermined direction are optically separated from each other.

Abstract: An energy generator including a material having a Curie temperature is provided. The energy generator includes a hot source at a first temperature, a cold sink at a second temperature, a means to couple the hot source to the material while the cold sink is insulated from the material, and a means to couple the cold sink to the material while the hot source is insulated from the material, wherein: the first temperature higher than the Curie temperature, and the second temperature lower than the Curie temperature. Also provided is an energy generator including elements as above, between the hot source and the cold sink. Further provided is a genset having an engine for producing electrical energy, a coolant system, an exhaust element, and an alternator, and an energy generator as above. A method for use an energy generator as above is also provided.

Abstract: Graphene and ferroelectric materials are used as tunable sensors for detecting and measuring radiation, such as infrared radiation. The low absorption and reflectance of graphene and interconnected graphene networks, for example in the infrared, are exploited for use in such tunable sensors. The active layer makes use of a unique property of ferroelectric materials, known as the pyroelectric effect, for measuring the intensity of impinging radiation. Using graphene electrodes may offer a significant increase in sensitivity, tunability and mechanical flexibility of sensors, such as infrared sensors. In one method, intensity of radiation is measured using variations in the doping level of the graphene electrode.

Abstract: A method for determining a formation thermal neutron decay rate from measurements of radiation resulting from at least one burst of high energy neutrons into formations surrounding a wellbore includes determining a first apparent neutron decay rate in a time window beginning at a first selected time after an end of the at least one burst, a second apparent decay rate from a time window beginning at a second selected time after the burst and a third apparent decay rate from a third selected time after the burst. The second time is later than the first time. A thermal neutron capture cross section of fluid in the wellbore is determined. A decay rate correction factor is determined based on the first and second apparent decay rates and a parameter indicative of the wellbore capture cross-section. The correction factor is applied to the third apparent decay rate to determine the formation thermal neutron decay rate.

Abstract: A method for assessing damage to a composite material covered with a polyurethane-type paint is provided. Two separate criteria are measured on a spectrogram obtained by infrared spectrometry, thereby characterizing thermal ageing of the paint, each separate criteria being a measurement on a curve of a spectrum of the spectrogram of a height of a particular peak, thereby giving two independent assessments of the thermal ageing. Then, the two separate criteria are combined together in order to obtain a result of a level of the damage.

Abstract: A measuring device for reflection measurements of test objects includes a transmitter for emitting radiation, a first collimation element for aligning the emitted radiation, a first focusing element for focusing emitted radiation in relation to the test object, and a receiver for detecting radiation reflected by the test object. There is a second collimation element for aligning the reflected radiation, and a second focusing element for focusing the reflected radiation in relation to the receiver. At least two of the first and second collimation elements and first and second focusing elements are separate from each other. Thus, a simple and flexible design of the measuring device is achieved, which can be adapted to the test object.

Abstract: There is provided a radiation image pickup unit including: a plurality of pixels each configured to generate a signal charge based on a radiation; a device substrate including a photoelectric conversion element for each pixel; a wavelength conversion layer provided on a light incident side of the device substrate, and configured to convert a wavelength of the radiation into other wavelength; and a partition wall separating the wavelength conversion layer for each pixel. The radiation image pickup unit is configured to allow a gap between the wavelength conversion layer and the device substrate to be equal to or larger than a threshold or equal to or smaller than the threshold, the threshold being preset based on a spatial frequency of an image pickup target.

Abstract: A semiconductor based photon counting detector comprising a substrate (11) of semiconductor material; a detector bias voltage supply (12) for applying a detector bias voltage over the substrate, each time during a data acquisition period (t1); a readout arrangement (13) for repetitively reading out data indicative of charges freed in, and transported through, the substrate (11) in response to photons being absorbed, each time during a readout period (t2) following a data acquisition period, wherein the data contain number of charge pulses of photons being absorbed; an external light source (15) for exposing the substrate for light to enable trapped charge carriers to escape from defect levels in the substrate; and a control device (14) operatively connected to the detector bias voltage supply, the readout arrangement, and the external light source.

Abstract: A semiconductor device includes a silicon substrate and a detection element and p-type and n-type MOS transistors, which are arranged on the silicon substrate, wherein the detection element includes a semiconductor layer, electrodes, and a Schottkey barrier disposed therebetween, the semiconductor layer is arranged just above a layer having the same composition and height as those of an impurity diffusion layer in the source or drain of the p-type or n-type MOS transistor, a region, in the silicon substrate, having the same composition and height as those of a channel region, in the silicon substrate, just below a gate oxide film of the p-type MOS transistor or the n-type MOS transistor, or a region, in the silicon substrate, having the same composition and height as those of a region just below a field oxide film disposed between the p-type and the n-type MOS transistor.

Abstract: The present disclosure relates to a readout circuit of an X-ray detector which includes a data line capacitor to store an electrical signal output from a pixel, an amplifier to amplify the electrical signal from the pixel, and a variable current load connected to an output terminal of the pixel.

Abstract: An X-ray detector array includes a scintillator that converts input X-ray radiation to secondary optical radiation output from the scintillator, a first telecentric micro lens array that array receives the secondary optical radiation, a phase coded aperture, where the first telecentric micro lens array directs the secondary optical radiation on the phase coded aperture, a second telecentric micro lens array, where the secondary optical radiation output from the phase coded array is directed to the second telecentric micro lens array, a patterned grating mask, where the second telecentric micro lens array directs the optical beam on the patterned mask, and a photodetector array, where the patterned mask outputs the optical beam in a pattern according to the patterned mask to the photodetector array, where the photodetector array outputs a signal, where a photon fringe pattern is imaged and sampled in the wavelength domain of the radiation from the scintillator.

Abstract: Defect detection and photoluminescence measurement of a sample directing a beam of oblique-illumination wavelength light onto a portion of the sample, directing a beam of normal-illumination wavelength light for causing one or more photoluminescing defects of the sample to emit photoluminescent light onto a portion of the sample, collecting defect scattered radiation or photoluminescence radiation from the sample, separating the radiation from the sample into a first portion of radiation in the visible spectrum, a second portion of radiation including the normal-illumination wavelength light, and at least a third portion of radiation including the oblique-illumination wavelength light, measuring one or more characteristics of the first portion, the second portion or the third portion of radiation; detecting one or more photoluminescence defects or one or more scattering defects based on the measured one or more characteristics of the first portion, the second portion or the third portion of radiation.

Abstract: A radioisotope generator that releases a daughter radioisotope from radioactive decay of a corresponding parent isotope, such as a 82Sr/82Rb radioisotope generator or 68Ge/68Ga radioisotope generator, may be used to generate radioisotopes for medical imaging applications. In some examples, a gamma ray detector is positioned to detect gamma rays emanating from radioactive eluate flowing from the generator. Based on the detected gamma rays, an activity of the daughter radioisotope in the eluate and an activity of the parent radioisotope in the eluate may be determined. Depending on the application, the activity of the daughter radioisotope and the activity of the parent radioisotope may be determined in substantially real time, e.g., so that the eluate can be diverted from patient dosing based on determined activity information for the eluate.

Abstract: Various embodiments include apparatus and methods to conduct a triple phase evaluation of a formation. The evaluation can be performed using a pulsed-neutron tool including a long detector and a detector to make sigma measurements. Additional apparatus, systems, and methods are disclosed.