Patents Examined by Felisa C. Garrett-Hiteshew
  • Method of producing recrystallized-material-member, and apparatus and heating method therefor
    Patent number: 5932003
    Abstract: The present invention relates to a method of producing a recrystallized-material-member by melting a given zone of a crystalline-material-member and moving the molten zone continuously along the crystalline-material-member to recrystallize a desired region of the crystalline-material-member, wherein dimension of the molten zone of the crystalline-material-member is controlled to be constant and/or quality of crystal of the recrystallized-material-member is controlled to be uniform.
    Type: Grant
    Filed: January 13, 1997
    Date of Patent: August 3, 1999
    Assignees: Mitsubishi Denki Kabushiki Kaisha, Dainippon Screen Mfg. Co., Ltd.
    Inventors: Hideo Naomoto, Akihiro Takami, Takashi Ishihara, Takashi Ito, Takatoshi Chiba, Eiichi Tamaki
  • Method for pulling a single-crystal semiconductor
    Patent number: 5911823
    Abstract: A method for pulling a <110> single-crystal silicon aims at preventing the crystal from being cut in diameter-reducing and suppress the increase in cost due to the cut prevention to the minimum. In the step for forming a diameter-reduced portion performed prior to the step for growing a <110> single-crystal silicon by the Czochralski method, a magnetic field having a strength of 500 gauss or more is applied and while suppressing a melt surface vibration and temperature variation, the crystal diameter is reduced to 2.00 mm or smaller.
    Type: Grant
    Filed: December 10, 1996
    Date of Patent: June 15, 1999
    Assignee: Komatsu Electronics Metals Co., Ltd.
    Inventors: Kouji Sonoda, Toshio Mimura
  • Method for annealing a semiconductor
    Patent number: 5861337
    Abstract: A method for manufacturing a semiconductor device including preparing a multi-chamber system having at least first and second chambers, the first chamber for forming a film and the second chamber for processing an object with a laser light; processing a substrate in one of the first and second chambers; transferring the substrate to the other one of the first and second chambers; and processing the substrate in the other one of the chambers, wherein the first and second chambers can be isolated from one another by using a gate valve.
    Type: Grant
    Filed: June 2, 1995
    Date of Patent: January 19, 1999
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hongyong Zhang, Naoto Kusumoto