Abstract: A method for producing lutetium aluminum perovskite crystals includes heat aging the crystal melt and maintaining the interface between a crystal and the melt from which it is pulled substantially flat as the crystal is grown. In a Czochralski growth method, the rate of rotation of the crystal and its diameter are typically controllable to provide the flat interface as the crystal is pulled. Crystals produced by this method exhibit less variability in scintillation behavior which allows larger crystals to be produced from a boule making them particularly suitable for spectroscopic uses. Such crystals find uses in borehole logging tools.

Abstract: Regulating cylinder unit is divided into three parts, a third regulating cylinder shaped essentially like a cylinder and installed on the protection cylinder; a first regulating cylinder and a second regulating cylinder which are shaped like reversed truncated cones with different diameters and are capable of engaging with the third regulating cylinder. In addition, the second and third regulating cylinders are brought together in a preset ordering, that is, a flange formed at the outer peripheral rim of the upper end of the second regulating cylinder is engaged with a stepped portion of the third regulating cylinder, and a flange formed at the outer peripheral rim of the upper end of the first regulating cylinder is engaged with a flange formed at the inner peripheral rim of the lower end of the second regulating cylinder.

Abstract: A process for producing single crystals has been presented which enables the pulling up and growing of single crystals, without loss of accurate control of the oxygen concentration in the crystal, and with excellent dielectric strength of subsequently produced gate oxide films. The process of producing single crystals in accordance with this invention is characterized by confluence of the inert gas flows (33 and 32) once divided into outside and inside a heat resistant and heat insulative component (7).

Abstract: Methods and apparatuses for pulling a single crystal. In a conventional method for pulling a single crystal, a neck having a smaller diameter has been formed in order to exclude dislocation induced in dipping a seed crystal into a melt. But in pulling a heavy single crystal having a large diameter of 12 inches or more, the single crystal cannot be supported and falls. When the diameter of the neck is large enough to prevent the fall, the dislocation can not be excluded and propagates to the single crystal. In the present invention, using an apparatus for pulling a single crystal having a laser beam generator or an incoherent light generating-inducing apparatus, the temperature of the front portion of the seed crystal is gradually raised by being irradiated with the laser beam or the incoherent light, and then, the seed crystal is dipped into the melt. As a result, the induction of the dislocation to the seed crystal caused by a thermal stress is prevented.

Abstract: A heater is configured to reduce oxygen in the melt near the growing crystal is provided by defining a high temperature region in an upper region of the heater, above a melt surface of semiconductor material from which a crystal is grown. This effectively shifts the heat balance of the system upwards, and alters thermal convections of oxygen within the melt. Accordingly, the primary vehicle for transporting oxygen to the growing crystal is suppressed.

Abstract: A method of manufacturing a semiconductor device which has a crystalline silicon film comprises the steps of forming crystal nuclei in a surface region of an amorphous silicon film and then growing the crystals from the nuclei by a laser light. Typically the crystal nuclei are silicon crystals or metal silicides having an equivalent structure as silicon crystal.

Abstract: A process for oxidizing iron ions contained within iron-doped lithium niobate. The process comprises the steps of protonating the iron-doped lithium niobate crystal and then placing the same into a pressure chamber where between 10-100 atmospheres of dry, ultra-pure pressurized oxygen are applied. While under pressure, the crystal is heated to approximately 950.degree. C. at a rate not to exceed 50.degree. C. per minute, and preferably at a rate not less than 25.degree. C. per minute. The crystals are then continuously heated at approximately 950.degree. C. for approximately 50 hours and then cooled to 30.degree. C. at a rate not to exceed 50.degree. C. per minute, and preferably at a rate not less than approximately 25.degree. C. per minute. The resulting lithium niobate crystal will thereafter contain iron ions wherein the divalent iron ion ration to the trivalent iron ion ratio is approximately 1:100.

Abstract: Single crystals of binary and ternary compounds of alkaline earth and a chalcogen, with or without a transition element, are grown by: charging a reaction vessel with an alkaline earth chalcogenide, with or without a transition element or a halide thereof, an acidic mineralizer, and anhydrous ammonia to where the fill factor in the reaction vessel is 30-95%; sealing the reaction vessel to the outside atmosphere; heating the contents of the reaction vessel to a temperature of at least 300.degree. C. until single crystal materials visible to the eye form in the reaction vessel; cooling the contents of the reaction vessel; and extracting the single crystal materials from the reaction vessel.

Abstract: An apparatus for producing a single crystal by the Czochralski method is disclosed in which an exhaust system is provided with a water sealing bubbler. On the upstream side of the bubbler is provided a buffer or a vacuum breaker or a buffer and a vacuum breaker. The structure prevents the sealing water in the bubbler from flowing backward, so that danger of steam explosion can be avoided.

Abstract: A process for growing a single crystal comprises providing a single crystal substrate acting as a seed crystal above a source material in a container, heating the source material in an inert gas atmosphere in the container to form a sublimed source material, and discharging the sublimed source material from the container through a port above the single crystal substrate, to cause the sublimed source material to flow along and in parallel with a surface of the single crystal substrate, and grow a single crystal on the surface of the single crystal substrate.

Abstract: A new process to form a polycrystalline silicon film using a polycrystalline silicon-germanium (poly-Si.sub.1-x Ge.sub.x) capping film to "seed" crystallization of an amorphous silicon film on an upper surface of a substrate. The polycrystalline silicon film has no nucleation sites and a greater number of grain boundaries in the region near the polycrystalline silicon upper surface than in the region near the polycrystalline silicon and substrate upper surface interface. This indicates that crystallization and crystal growth occurred from the polycrystalline silicon upper surface and proceeded in a direction towards the substrate upper surface.

Abstract: A single crystal pulling method employing; a gas tight container, a double crucible for storing a semiconductor melt inside the gas tight container comprising an inter-connected outer crucible and inner crucible, and a source material supply tube suspended from an upper portion of the gas tight container and positioned so that a granulated or powdered source material can be added from a lower end opening thereof to the semiconductor melt inside the outer crucible, with the source material being injected into the source material supply tube together with an inert gas flowing towards the enclosed container, characterized in that said source material is injected under conditions where the flow rate N (1/min.multidot.cm.sup.2) of the inert gas is within the range 0.0048P+0.0264<N<0.07P, where P (Torr) is the internal pressure inside said gas tight container.

Abstract: A method, mechanisms and jig for handling a member of a crystal pulling apparatus are disclosed. The crystal pulling apparatus grows a single crystal from a melt of a crystalline material by a CZ method. Handling of a graphite crucible or the like of the crystal pulling apparatus, including a vertical moving operation, a swinging operation, or the like, is performed using a crane and a lifting jig. This makes it possible to readily move the member of the crystal pulling apparatus vertically and otherwise without relying on manual labor.

Abstract: A method for manufacturing a silicon single crystal substrate for use of an epitaxial layer growth. The method comprises the steps of: growing a CVD film on a rear surface and a peripheral side portion, of the silicon single crystal substrate; removing a portion of the CVD film on the peripheral side portion in the vicinity of a main surface of the silicon single crystal substrate, which was grown over an end of the peripheral side portion, by an abrasive tape grinding; and thereafter mirror-polishing the main surface of the silicon single crystal substrate.

Abstract: Process for continuously galvanizing steel sheet by passing the sheet through a bath consisting of zinc, aluminium and silicon, the aluminium content ranging from 0.05% to 0.5% by weight and the silicon content from 0.005% by weight up to saturation.There is neither formation of aluminiferous floating dross nor formation of bottom dross in such a bath.

Abstract: The pull head of a Czochralski crystal puller is mounted on a frame which is supported independently from the crystal puller receiving chamber. In particular, the pull head is mounted on a rigid frame which is supported by the same surface that supports the melt charge crucible. The pull head thereby can be aligned relative to the rigid frame, rather than to the receiving chamber, and can be accurately aligned with the crucible rotation axis and positioned in order to insure that its rotation axis is vertical. In one embodiment, the pull head is mounted on a plate which engages alignment pins attached to the rigid frame. The alignment pins insure proper alignment of the pull head relative to the frame. When the receiving chamber is raised to allow the crystal to be removed, the plate is engaged by the receiving chamber and lifted off the alignment pins so that the pull head moves with the receiving chamber.

Abstract: Homogeneous crystals are grown from a multicomponent melt double crucible assembly with an injector which affords improved flow of melt from the outer to the inner crucible. Guide rods are provided external to the outer crucible and locate the inner crucible with reduced probability of sticking. Means are also provided for withdrawing the inner crucible after crystal growth is complete as is a method of removing trapped gas from the apparatus prior to crystal growth.

Abstract: A single crystal pulling apparatus wherein a semiconductor melt is stored in an outer crucible, and a cylindrical inner crucible which acts as a partition body, is mounted inside the outer crucible to thus form a double crucible, and a single crystal of semiconductor is pulled from the semiconductor melt inside the inner crucible. The inner crucible contains a communicating portion, which is formed when the double crucible is formed, for allowing flow of the semiconductor melt into the inner crucible, and the communicating portion incorporates an arrangement for removal of gas bubbles which have adhered to the communicating portion.

Abstract: A single crystal pulling apparatus comprising: a gas tight container, a double crucible for storing a semiconductor melt inside the gas tight container comprising an outer crucible and an inner crucible which are connected at a lower edge, and source material supply means for adding source material to the semiconductor melt at a position between the outer crucible and the inner crucible, characterized in that a flow restriction member is provided inside the semiconductor melt region between the outer crucible and the inner crucible for restricting the flow of the semiconductor melt.

Abstract: The methods and apparatus disclosed enable controlled growth of multicomponent metal oxide thin films, including high temperature superconducting (HTS) thin films, which are uniform and reproducible. The method and apparatus enable a controlled flow and pressure of a gaseous phase of metal containing molecules to be introduced into a reaction chamber, or into an analysis chamber, or into both. The flow into the reaction chamber enables deposition of metal oxides on a substrate and, therefore, growth of multicomponent metal oxide thin films, including HTS thin films, on the substrate. The flow into the analysis chamber enables compositional analysis of the gas. The apparatus also allows adjustment of the gaseous phase flow and pressure into the reaction chamber based upon the results of the compositional analysis. In one aspect of this invention, a heating mantle provides substantially uniform heating throughout the apparatus.