Abstract: A cleaning solution is provided for cleaning copper-containing microelectronic substrates, particularly for post-CMP or Via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethanolamine, gallic acid, and water. The pH of the cleaning solution is greater than 10.

Abstract: A system for dry cleaning soils from fabrics is described which contains densified carbon dioxide combined with a selected surfactant. The densified carbon dioxide is used in a temperature range of about -78.5.degree. C. to about 100.degree. C. and a pressure range of about 14.7 psi to about 10,000 psi. The surfactant is selected from one of two groups of compounds having a formula ##STR1## as described in the text or a second group of siloxane compounds having a formula [AB].sub.y as described. A process for using the dry cleaning system is also described.

Abstract: The present invention relates to a process for producing coated bleach activator granules in which bleach activator base granules are coated with a coating substance and are simultaneously and/or subsequently thermally conditioned.