Abstract: A first object of the present invention is to provide a surface-modified inorganic nitride having excellent dispersibility. Furthermore, a second object of the present invention is to provide a composition, a thermally conductive material, and a device with a thermally conductive layer which contain the surface-modified inorganic nitride. The surface-modified inorganic nitride of the present invention includes an inorganic nitride, and a compound which is represented by General Formula (I) and is adsorbed onto a surface of the inorganic nitride. In General Formula (1), n represents an integer of 3 or greater. X represents an aromatic hydrocarbon ring group or an aromatic heterocyclic group. Y represents a single bond, —O—, —CO—, —CO—O—, —O—CO—, —S—, —CS—, —NRA—, —N?N—, or a divalent unsaturated hydrocarbon group. RA represents a hydrogen atom or an alkyl group. R1 and R2 each independently represent a substituent.

Abstract: An object of the present invention is to provide a surface-modified inorganic nitride having excellent dispersibility. Furthermore, another object of the present invention is to provide a composition, a thermally conductive material, and a device with a thermally conductive layer which contain the surface-modified inorganic nitride. The surface-modified inorganic nitride of the present invention includes an inorganic nitride, and a compound which is represented by General Formula (I) and is adsorbed onto a surface of the inorganic nitride.

Abstract: An alkali-metal dispenser to dispense highly pure rubidium in a high-vacuum environment while not negatively impacting the high-vacuum pressure level. The alkali-metal dispenser is operable in various vapor-deposition applications or to provide a highly pure elemental-alkali metal in cold-atom magneto-optical traps.

Abstract: A method for producing fluorinated boron nitride involves heating a reactor chamber, providing boron nitride in the reactor chamber, flowing fluorine and an inert gas through the reactor chamber, and exposing the boron nitride to the flowing gases and the heat. The method may include boron nitride that is exfoliated or non-exfoliated. The fluorinated boron nitride that is produced from this method may have a hexagonal crystal structure or a cubic crystal structure. The method may additionally comprise removing the fluorinated boron nitride from the reactor chamber and mixing it with a surfactant. A suspension may comprise particles of fluorinated boron nitride suspended in a fluid, which may be polar or non-polar, and may additionally include a surfactant. The fluorinated boron nitride may have a hexagonal or a cubic crystal structure. Furthermore, the boron nitride may be exfoliated or non-exfoliated.

Abstract: A polycrystalline diamond construction comprising a body of polycrystalline diamond material formed of a mass of diamond grains exhibiting inter-granular bonding, wherein between around 50 wt % to around 99 wt % of the diamond grains in a cross-section of the body of polycrystalline diamond material taken at any orientation have a sectorial growth structure. A method of making the polycrystalline diamond construction is also disclosed.

Abstract: A calcium metaborate birefringent crystal and a preparation method and use thereof, the crystal having a chemical formula of CaB2O4 and a molecular weight of 125.70, and belonging to the orthorhombic crystal system and space group Pbcn with unit-cell parameters a=11.60(4)?, b=4.28(8)?, c=6.21(6)?, and Z=4, wherein the calcium metaborate birefringent crystal is a negative biaxial crystal with a transmission range of 165-3400 nm and a birefringence between 0.09-0.36; the crystal is applicable to infrared-visible-ultraviolet-deep ultraviolet bands, and is grown by a melt method, a flux method, a Bridgman method or a heat exchange method; the crystal obtained by the method of the present invention is easy to grow and easy to process; and can be used for making polarizing beam-splitting prisms.

Abstract: In an embodiment, a method includes producing a mixed feedstock of at least three halogenated monomer feedstocks. A first of the at least three halogenated monomer feedstocks includes an SP3 carbon, a second of the at least three halogenated monomer feedstocks includes an SP2 carbon, and a third of the at least three halogenated monomer feedstocks includes at least two SP1 carbons. The method further includes producing a polyorbital-hybrid pre-ceramic polymer comprising the SP1 carbons, the SP2 carbon, and the SP3 carbon. The polyorbital-hybrid pre-ceramic polymer is produced by reducing the mixed feedstock such that one or more halogen atoms are removed from the mixed feedstock. The method also includes fabricating the polyorbital-hybrid pre-ceramic polymer into a greenware form and producing a polyorbital-hybrid ceramic carbon comprising the SP1 carbons, the SP2 carbon, and the SP3 carbon. The polyorbital-hybrid ceramic carbon is produced by thermolyzing the polyorbital pre-ceramic polymer.

Abstract: Provided are silicon-containing aluminum nitride particles having a high reflectance, a method for producing the same, and a light emitting device. In certain embodiment, silicon-containing aluminum nitride particles having a total amount of aluminum and nitrogen of 90% by mass or more, a content of silicon in a range of 1.5% by mass or more and 4.0% by mass or less, and a content of oxygen in a range of 0.5% by mass or more and 2.0% by mass or less, and having an average reflectance in a wavelength range of 380 nm or more and 730 nm or less of 85% or more.

Abstract: A synthetic diamond material comprises a surface, wherein the surface comprises a first surface region comprising a first concentration of quantum spin defects. A second surface region has a predetermined area and is located adjacent to the first surface region, the second region comprising a second concentration of quantum spin defects. The first concentration of quantum spin defects is at least ten times greater than the second concentration of quantum spin defects, and at least one of the first or second surface regions comprises chemical vapour deposition, CVD, synthetic diamond. A method of producing the synthetic diamond material is also disclosed.

Abstract: Silicon-carbon composite materials and related processes are disclosed that overcome the challenges for providing amorphous nano-sized silicon entrained within porous carbon. Compared to other, inferior materials and processes described in the prior art, the materials and processes disclosed herein find superior utility in various applications, including energy storage devices such as lithium ion batteries.

Abstract: The present invention relates to a silicon dioxide composite particle with far-infrared radioactivity, which is formed by the hydrolysis, condensation and polymerization of an organic silane precursor having the structure of the formula (I) with a tetra-alkoxysilane. The high stability of organic silane precursor compounds and the low biotoxicity of silicon dioxide composite particles make the present far-infrared radioactive silicon dioxide composite particles of great potential for extensive use in related bio-products.

Abstract: The present invention provides methods for uniform growth of nanostructures such as nanotubes (e.g., carbon nanotubes) on the surface of a substrate, wherein the long axes of the nanostructures may be substantially aligned. The nanostructures may be further processed for use in various applications, such as composite materials. For example, a set of aligned nanostructures may be formed and transferred, either in bulk or to another surface, to another material to enhance the properties of the material. In some cases, the nanostructures may enhance the mechanical properties of a material, for example, providing mechanical reinforcement at an interface between two materials or plies. In some cases, the nanostructures may enhance thermal and/or electronic properties of a material. The present invention also provides systems and methods for growth of nanostructures, including batch processes and continuous processes.

Abstract: A silicon carbide seed crystal and method of manufacturing the same, and method of manufacturing silicon carbide ingot are provided. The silicon carbide seed crystal has a silicon surface and a carbon surface opposite to the silicon surface. A difference D between a basal plane dislocation density BPD1 of the silicon surface BPD1 and a basal plane dislocation density BPD2 of the carbon surface satisfies the following formula (1): D=(BPD1?BPD2)/BPD1?25%??(1).

Abstract: A SiC single crystal, including: a seed crystal; a first growth portion formed in a direction that is substantially orthogonal to a <0001> direction; a second growth portion formed in a direction that is substantially orthogonal to the <0001> direction and substantially orthogonal to the direction in which the first growth portion is formed; a third growth portion that is formed on a surface of the seed crystal opposite the first growth portion; and a fourth growth portion that is formed on a surface of the seed crystal opposite the second growth portion.

Abstract: The present application provides a method for preparing a zinc oxide nanoparticle structure synthesized using a microfluidic device and a self-assembled porous three-dimensional zinc oxide nanoparticle structure prepared therefrom. The self-assembled porous three-dimensional zinc oxide nanoparticle structure of the present application is a three-dimensional structure in which micropores, mesopores and macropores are created, and has excellent reactivity.

Abstract: The process for preparing high purity SiC powders according to the embodiment not only solves the environmental problems by using waste SiC, but also reduces the manufacturing cost with high yield, high productivity, and high uniformity.

Abstract: A method according to an embodiment of the present invention is for preparing powdered composite carbide of tungsten and titanium in which tungsten trioxide (WO3), titanium dioxide (TiO2) and carbon (C), each being in powdered form are mixed with a reducing agent powder to obtain a reaction mixture in the mixing step, followed by the synthesis step in which the reaction mixture is heated at a temperature of about 600° C. to 1200° C. to obtain the reaction products, and the washing step in which the reaction products are washed with water. The method for preparing tungsten titanium carbide powder is capable of carrying out both reduction and carburizing at a relatively low temperature and affords homogeneity in shape and particle size in the resultant composite carbide.

Abstract: A solidified porous carbon material uses a plant-derived material as a raw material, a bulk density of the solidified porous carbon material is in the range of 0.2 to 0.4 grams/cm3, preferably, 0.3 to 0.4 grams/cm3. A value of a cumulative pore volume in the range of 0.05 to 5 ?m in pore size based on a mercury press-in method is in the range of 0.4 to 1.2 cm3, preferably, 0.5 to 1.0 cm3 per 1 gram of the solidified porous carbon material.

Abstract: According to the present invention, there is provided a SiC epitaxial wafer including: a 4H-SiC single crystal substrate which has a surface with an off angle with respect to a c-plane as a main surface and a bevel part on a peripheral part; and a SiC epitaxial layer having a film thickness of 20 ?m or more, which is formed on the 4H-SiC single crystal substrate, in which a density of an interface dislocation extending from an outer peripheral edge of the SiC epitaxial layer is 10 lines/cm or less.

Abstract: There is provided a method of manufacturing a group III nitride semiconductor substrate including: a fixing step S10 of fixing abase substrate, which includes a group III nitride semiconductor layer having a semipolar plane as a main surface, to a susceptor; a first growth step S11 of forming a first growth layer by growing a group III nitride semiconductor over the main surface of the group III nitride semiconductor layer in a state in which the base substrate is fixed to the susceptor using an HVPE method; a cooling step S12 of cooling a laminate including the susceptor, the base substrate, and the first growth layer; and a second growth step S13 of forming a second growth layer by growing a group III nitride semiconductor over the first growth layer in a state in which the base substrate is fixed to the susceptor using the HVPE method.