Abstract: Methods, systems, and devices for techniques for error correction at a memory device are described. In some examples, as part of transmitting a command to access data stored at a memory device, a host device may transmit a combined error control code to the memory device that may be generated using the command and associated inversion information. The memory device may use the received combined error control code to perform an error control procedure on both the command and the inversion information. In some examples, while in a direct link error control code procedure mode, the host system may transmit a command to access data stored at the memory device. The host system may use a same pin or channel to transmit both an error control code for the command and an error control code for the associated data.

Abstract: A method of correcting one or more bit errors in a memory device includes retrieving a codeword from a memory device. The codeword includes a data and an error correcting code. The method further includes determining whether the one or more bit errors are present in the retrieved codeword and correcting the retrieved codeword for the one bit error in response to determining one bit error is present in the retrieved codeword. The method also includes flipping a bit of the retrieved codeword in response to determining a plurality of bit errors is present in the retrieved codeword and correcting the retrieved codeword for the plurality of bit errors based on the bit-flipped codeword.

Abstract: A memory device, and an operating method of the memory device and a host device are provided. The method of operating a memory device includes receiving a command for requesting an Eye Open Monitor (EOM) operation performance from a host device, receiving pattern data including data and non-data from the host device, performing the EOM operation which performs an error count to correspond to the data, and does not perform the error count on the non-data, and transmitting an EOM response signal including the error count result to the host device.

Abstract: Methods, systems, and devices for performing an error correction operation using a direct-input column redundancy scheme are described. A device that has read data from data planes may replace data from one of the planes with redundancy data from a data plane storing redundancy data. The device may then provide the redundancy data to an error correction circuit coupled with the data plane that stored the redundancy data. The error correction circuit may operate on the redundancy data and transfer the result of the operation to select components in a connected error correction circuit. The components to which the output is transferred may be selected based on data plane replaced by the redundancy data. The device may generate syndrome bits for the read data by performing additional operations on the outputs of the error correction circuit.

Abstract: A memory system includes a non-volatile memory and a controller that includes a toggle encoder configured to encode first data having a first bit length and a first number of toggles, into second data having a second bit length longer than the first bit length and a second number of toggles smaller than the first number of toggles, and transmit the second data to the non-volatile memory. The memory system may further include a toggle decoder configured to decode third data received from the non-volatile memory into fourth data, the third data having the second bit length and the second number of toggles and the fourth data having the first bit length and the first number of toggles.

Abstract: A method for reading data stored in a flash memory includes at least the following steps: controlling the flash memory to perform a plurality of read operations upon a plurality of memory cells included in the flash memory; obtaining a plurality of bit sequences read from the memory cells, respectively, wherein the read operations read bits of a predetermined bit order from the memory cells by utilizing different control gate voltage settings; and determining readout information of the memory cells according to binary digit distribution characteristics of the bit sequences.

Abstract: A solid state disk access method includes: determining, in response to a read error, a first read voltage of the current data block according to a current data storage time interval to which a data storage time of the current data block belongs; performing reread error correction on the data in the current data block based on the first read voltage; determining, if reread error correction of the current data block fails, a second read voltage corresponding to the current data block according to the current data storage time interval and a preset data read rule that is determined based on the data storage time interval and the number of data reads; and performing reread error correction on the data in the current data block based on the second read voltage until the reread error correction of the current data block meets a preset reread error correction condition.

Abstract: A semiconductor memory apparatus may include: a memory cell array; an ECC (Error Check and Correction) circuit configured to detect an error from data read from the memory cell array in response to a read command, correct the detected error, and output an error correction signal whenever an error is corrected; and an EF (Error Flag) generator configured to enter a flag output mode when the number of times that the error correction signal is generated during a monitoring period reaches a threshold, and output the error correction signal as an error flag in the flag output mode.

Abstract: A method includes a computing device of a storage network obfuscating encoded data slices of a first set of encoded data slices of a plurality of sets of encoded data slices using an obfuscating method to produce obfuscated encoded data slices. The method further includes the computing device of the storage network outputting the obfuscated encoded data slices for storage in the storage network.

Abstract: Methods, systems, and devices for spare substitution in a memory system are described. A controller may, as part of a background operation, assign a spare bit to replace a bit of a code word and save an indication of the spare bit assignment in a memory array. The code word may include a set of bits that each correspond to a respective Minimum Substitution Region (MSR) within a memory medium that retains the code word. An MSR corresponding to the bit to be replaced may include a quantity of erroneous bits relative to a threshold. The controller may, during a read operation, identify the spare bit in a first portion of the code word, determine the bit to be replaced based on accessing the memory array, and replace the bit with the spare bit concurrently with receiving a second portion of the code word.

Abstract: According to one general aspect, an apparatus may include a host interface circuit configured to receive offloading instructions from a host processing device, wherein the offloading instructions instruct the apparatus to compute an error correction code associated with a plurality of data elements. The apparatus may include a memory interface circuit configured to receive the plurality of data elements. The apparatus may include a plurality of memory buffer circuits configured to temporarily store the plurality of data elements. The apparatus may include a plurality of error code computation circuits configured to, at least in part, compute the error correction code without additional processing by the host processing device.

Abstract: A system and method for protecting memory instructions against faults are described. The system and method include converting the slave instructions to dummy operations, modifying memory arbiter to issue up to N master and N slave global/shared memory instructions per cycle, sending master memory requests to memory system, using slave requests for error checking, entering master requests to the GM/LM FIFO, storing slave requests in a register, and comparing the entered master requests with the stored slave requests.

Abstract: A memory controller is provided that is configured to control a memory accessed by a device connected to a host processor via a bus. The memory controller is configured to control a memory accessed by a device connected to a host processor via a bus, and includes a first interface circuit configured to communicate with the host processor; a second interface circuit configured to communicate with the memory; an error detection circuit configured to detect an error present in data received from the second interface circuit in response to a first read request received from the first interface circuit; a variable error correction circuit configured to correct the error based on at least one of a reference latency and a reference error correction level included in a first error correction option; and a fixed error correction circuit configured to correct the error in parallel with an operation of the variable error correction circuit.

Abstract: Systems, apparatuses, and methods related to chiplets are described. A chiplet-based system may include a memory controller chiplet to control accesses to a storage array, and the memory controller chiplet can facilitate error correction and cache management in a manner to minimize interruptions to a sequence of data reads to write corrected data from a prior read back into the storage array. For example, a read command may be received at a memory controller device of the memory system from a requesting device. Data responsive to the read command may be obtained and determined to include a correctable error. The data may be corrected, transmitted to the requesting device and written to cache of the memory controller device with an indication that data is valid and dirty (e.g., includes an error or corrected error). The data is written back to the memory array in response to a cache eviction event.

Abstract: Devices and techniques for extended error correction in a storage device are described herein. A first set of data, that has a corresponding logical address and physical address, is received. A second set of data can be selected based on the logical address. Secondary error correction data can be computed from the first set of data and the second set of data. Primary error correction data can be differentiated from the secondary error correction data by being computed from the first set of data and a third set of data. The third set of data can be selected based on the physical address of the first set of data. The secondary error correction data can be written to the storage device based on the logical address.

Abstract: Techniques for non-deterministic operation of a stacked memory system are provided. In an example, a method of operating a memory package can include receiving a plurality of memory access requests for a channel at a logic die, returning first data to a host in response to a first memory access request of the plurality of memory access requests, returning an indication of data not ready to the host in response to a second memory access request of the plurality of memory access requests for second data, returning a first index to the host with the indication of data not ready, returning an indication data is ready with third data in response to a third memory access request of the plurality of memory access requests, and returning the first index with the indication of data ready.

Abstract: In one implementation, storage system includes embedded storage devices, where each embedded storage device includes a direct-mapped solid state drive (SSD) storage portion and storage system controllers. The storage system controllers may be operatively coupled to the embedded storage devices via a bus. The storage system controllers may receive data to be written to the plurality embedded storage devices, select a plurality of available allocation units from the direct-mapped SSD storage portions of the plurality of embedded storage devices, respectively, and calculate a verification signature corresponding to the data. The storage system controllers may also write the data and the verification signature to a first subset of the plurality of available allocation units, calculate an erasure code corresponding to the data and the verification signature, and write the erasure code to a second subset of allocation units.

Abstract: A network element is configured to efficiently load balance packets through a computer network. The network element receives a packet associated with flow attributes and generates a Load Balancing Flow Vector (LBFV) from the flow attributes. The network element partitions the LBFV into a plurality of LBFV blocks and reorders the LBFV blocks to generate a reordered LBFV. The LBFV blocks are reordered based on a reordering sequence that is different from reordering sequences on other network elements in the computer network. The network element hashes the reordered LBFV to generate a hash key for the packet and selects a next hop link based on the hash key. The next hop link connects the network elements to a next hop network element in the computer network.

Abstract: Commutative coding in a geographically diverse data storage system is disclosed. Commutative coding can achieve a same result as more conventional hierarchical erasure coding of data, but can be more efficient. Commutative coding can employ Galois Field (GF) based bit-matrix operations. The bit-matrix operations can employ a reduced GF order in associated with expanding elements of input matrixes. A reduced GF order can perform matrix operations at a lower complexity, e.g., employing AND operations for a GF(2) in contrast to XOR operations for a GF(2w), where w=4, 8, 16, etc. In an aspect, commutative coding can comprise generating a second-tier coding fragment based on applying a second erasure coding scheme, via bit-matrix operations, to a first-tier encoded fragment, wherein the first-tier encoded fragment is based on an input data fragment and a first erasure coding scheme.

Abstract: Methods, systems, and devices for erasure decoding for a memory device are described. In accordance with the described techniques, a memory device may be configured to identify conditions associated with an erasure, a possible erasure, or an otherwise indeterminate logic state (e.g., of a memory cell, of an information position of a codeword). Such an identification may be used to enhance aspects of error handling operations, including those that may be performed at the memory device or a host device (e.g., error handling operations performed at a memory controller external to the memory device). For example, error handling operations may be performed using speculative codewords, where information positions associated with an indeterminate or unassigned logic state are assigned with a respective assumed logic state, which may extend a capability of error detection or error correction compared to handling errors with unknown positions.