Abstract: An amplifying apparatus is provided, which includes a power-source main line, a plurality of amplifying control devices which include an amplifier, a power-source branch line, an over current protector. The amplifier amplifies a high-frequency signal. The power-source branch line is branched from the power-source main line. The over current protector disposed for the power-source branch line is connected to the amplifier and configured to disconnect the power-source branch line based on drive current flowing through the amplifier from the power-source branch line. The power-source main line is common to the plurality of amplifying control devices.

Abstract: Devices and processes for preparing devices are described for a bulk acoustic wave resonator. A stack includes a first electrode that is coupled to a first side of a piezoelectric layer and a second electrode that is coupled to a second side of the piezoelectric layer. The stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. A cavity frame is coupled to the first electrode and to the substrate. The cavity frame forms a perimeter around a cavity. Optionally, a heat dissipating frame is formed and coupled to the second electrode. The cavity frame and/or the heat dissipating frame improve the thermal stability of the bulk acoustic resonator.

Abstract: Segmented power amplifier (PA) arrangements are disclosed. An example PA arrangement includes at least first and second PA segments, each having a respective combination of a PA and a feedforward adaptive bias circuit, configured to generate a bias signal for the corresponding PA. Each bias signal has a first DC component, at least one tone component, and at least one harmonic of the at least one tone component. The PA arrangement further includes a power splitting circuit, configured to split an input signal for the PA arrangement into a first PA input signal for the first PA segment and a second PA input signal for the second PA segment, where a power of the first PA input signal is greater than a power of the second PA input signal.

Abstract: The disclosure relates to a signal combiner for a Doherty power amplifier architecture, the signal combiner including a termination circuit on an isolation port, the termination circuit being tuned to improve performance of the Doherty power amplifier. The architecture includes a carrier amplifier and a peaking amplifier. The peaking amplifier modulates the load seen by the carrier amplifier, allowing the carrier amplifier to remain in high-efficiency, saturated operation even at back-off. This load modulation can be achieved using impedance matching networks having an impedance matched to a specific frequency. The architectures include tuned or tailored signal combiners with termination circuits on isolation ports. The termination circuits are tuned or tailored for particular operating frequencies to enhance operation.

Abstract: A phase shifter comprising an actuator coupled to a dielectric. When the dielectric is inserted into the waveguide in response to actuation by the actuator, the phase velocity of the incoming electromagnetic wave is decreased, resulting in a phase shift of the electromagnetic wave. A desired phase shift and a low insertion loss can be controlled by positioning of the dielectric and engineering the permittivity of the dielectric.

Abstract: A bulk acoustic wave resonator includes a substrate, a support layer disposed on the substrate, the support layer including a cavity having a polygon shape with more than three sides in a plane crossing a first direction from the substrate to the support layer, a piezoelectric layer disposed on the support layer, a bottom electrode disposed below the piezoelectric layer, partially overlapping the cavity, and extending across a first side of the cavity, and a top electrode disposed above the piezoelectric layer, partially overlapping the cavity, and extending across a second side of the cavity. The bulk acoustic wave resonator further includes at least one release hole formed in the piezoelectric layer and overlapping a portion of the cavity.

Abstract: A high-frequency circuit includes an amplifier, a power distributor disposed on an output route of the amplifier, a first by-pass route that bypasses the amplifier, a second by-pass route that bypasses the power distributor, a first switch and a second switch disposed in series on the first by-pass route, and a third switch disposed in series on the second by-pass route. The first by-pass route is connected to a first node on a route connecting a signal input terminal and the amplifier and a second node on a route connecting the amplifier and the power distributor. The second by-pass route is connected to a third node between the first switch and the second switch and a fourth node on an output route of the power distributor.

Abstract: A power combiner circuit comprises a network topology for broadband RF and microwave systems that includes coupling elements, internodal matching sections, and an output matching section. The network topology serves as a combining mechanism for power from multiple power amplifiers. The network topology is designed so that characteristic impedances of transmissions lines serving as the coupling elements, internodal matching sections, and an output matching section produce a load impedance at an output port that is matched to the impedances seen by each power amplifier providing power to the power combiner circuit. Such a network topology is scalable to an unlimited number of power amplifiers, and enables a desired broadband frequency response for power amplification, while realizing a very low level of power output loss between input and output ports.

Abstract: A T-junction with high isolation and a method for fabricating the same are provided. The T-junction includes a power divider/combiner configured to divide or combine power, a dielectric substrate disposed perpendicular to a lower plane of the power divider/combiner, and a dielectric holder configured to dispose the dielectric substrate.

Abstract: A piecewise linear gain amplifier circuit includes a differential preamplifier and a plurality of transconductors. The differential preamplifier is electrically coupled to a differential input having an input voltage. The transconductors are electrically coupled in parallel with each other. Each transconductor includes a respective differential input that is electrically coupled to a differential output of the differential preamplifier. In addition, each transconductor includes a respective differential output that is electrically coupled to a common differential PWL output. Each transconductor has a different linear input range. An optional attenuation circuit can be electrically coupled in parallel to the differential preamplifier. The differential output of the attenuation circuit can be electrically coupled to a differential input of another transconductor, and that transconductor can have a differential output that is electrically coupled to the common differential PWL output.

Abstract: A phase shifter unit cell or a connected set of such cells that can be well isolated from external circuitry and which do not introduce insertion loss into an RF signal path, exhibit good return loss, and further provides additional advantages when combined with bracketing attenuator circuits. More particularly, embodiments integrate a high-isolation function within a phase shifter circuit by breaking the complimentary nature of the control signals to a phase shifter cell to provide greater control of switch states internal to the phase shifter cell and thus enable a distinct high-isolation state, and by including a switchable shunt termination resistor for use in the high-isolation state. Some embodiments are serially coupled to attenuator circuits to enable synergistic interaction that reduces overall die size and/or increases isolation. One such embodiment positions a high-isolation phase shifter cell in accordance with the present invention between bracketing programmable attenuators.

Abstract: A class AB buffer includes an output stage and an input stage. The output stage includes a first output transistor and a second output transistor. The second output transistor is coupled to the first output transistor. The input stage is coupled to the output stage. The input stage includes a first cascode transistor, a first switch, a second cascode transistor, and a second switch. The first switch is coupled to the first cascode transistor and the first output transistor. The second switch is coupled to the first switch, the second cascode transistor, and the first output transistor.

Abstract: An elastic wave device includes a piezoelectric substrate, a first elastic wave element on the piezoelectric substrate and including at least one first interdigital transducer electrode and a first reflector in an area of the first interdigital transducer electrode at one side in a propagation direction of elastic waves, and a second elastic wave element on the piezoelectric substrate and including at least one second interdigital transducer electrode and a second reflector in an area of the second interdigital transducer electrode at one side in the propagation direction of elastic waves. The first and second reflectors are disposed side by side in the propagation direction. A reflection member, between the first and second reflectors, reflects elastic waves in at least a direction different from the propagation direction.

Abstract: Aspects of this disclosure relate to a multiplexer that includes at least a first filter having a first passband and a second filter having a second passband. The first filter includes acoustic wave resonators coupled to a common node by a series inductor. The acoustic wave resonators start with a shunt acoustic resonator from the common node. The series inductor and the shunt acoustic resonator of the first filter are together arranged to increase a reflection coefficient of the first filter in the second passband.

Abstract: Methods of fabricating acoustic filters. A back-side frequency setting layer is formed on a surface of a substrate and/or a back surface of a piezoelectric plate. The piezoelectric plate is attached to the substrate with the back-side frequency setting layer sandwiched between the substrate and the piezoelectric plate. Portions of the piezoelectric plate and backside frequency setting layer form diaphragms spanning respective cavities in the substrate. A conductor pattern defining a plurality of acoustic resonators is formed on a front surface of the piezoelectric plate. Each of the acoustic resonators includes an interdigital transducer (IDT) with interleaved fingers disposed on a respective diaphragm. A front-side frequency setting layer is formed over the interleaved fingers and the front surface of the diaphragms of one or more shunt resonators. The back-side frequency setting layer is removed from the back surfaces of the diaphragms of one or more series resonators.

Abstract: An amplifier circuit is capable of switching between a unipolar output voltage domain and a bipolar output voltage domain. The amplifier circuit comprises an operational amplifier with a feedback circuit that is configurable using switches. By controlling the switches, the amplifier's feedback circuit can switched between two different arrangements having a positive and a negative signal gain, respectively. The amplifier circuit is designed such that the noise gain is the same in both operating modes, allowing a single noise compensation approach to be used for both operating modes. Since configurability of the circuit is achieved using static switches, the amplifier circuit maintains high accuracy and experiences no appreciable impact on power consumption as a result of implementing the switching.

Abstract: A filter device includes a first filter and a second filter. The first filter and the second filter are disposed in parallel between a first terminal and a second terminal. A first passband of the filter device includes at least part of a second passband of the first filter. The first passband includes at least part of a third passband of the second filter. The second passband is narrower than the first passband. The third passband is narrower than the first passband. The third passband has a center frequency higher than a center frequency of the second passband. The first filter includes multiple elastic wave resonators and a first capacitive element. The first capacitive element is connected in parallel with the first elastic wave resonator.

Abstract: A radio frequency filter includes at least a first sub-filter and a second sub-filter connected in parallel between a first port and a second port. Each of the sub-filters has a piezoelectric plate having front and back surfaces, the back surface attached to a substrate, and portions of the piezoelectric plate forming diaphragms spanning respective cavities in the substrate. A conductor pattern is formed on the front surface of the plate, the conductor pattern includes interdigital transducers (IDTs) of a respective plurality of resonators, with interleaved fingers of each IDT disposed on a respective diaphragm of the plurality of diaphragms. A thickness of the portions of the piezoelectric plate of the first sub-filter is different from a thickness of the portions of the piezoelectric plate of the second sub-filter.

Abstract: An electronic circuit includes a conductor column that is connected to a ground of a first layer which is any one of plural conductor layers stacked in a separated state and extends in a stacking direction, a first conductor line that is connected to the conductor column to extend in a band shape in a second layer different from the first layer of the plural conductor layers, and of which an end portion separated from the conductor column is an open end, and a second conductor line that extends in a band shape in any layer of the plural conductor layers, in which each of the first conductor line and the second conductor line has one neighboring portion constituting at least a pair of neighboring portions, which are close to each other to be connectable, and a first end portion of the second conductor line, which is separated from the neighboring portion formed on the second conductor line, is an open end.

Abstract: A device includes a first amplifier and a second amplifier. The first amplifier includes an inverting input configured to be coupled to a feedback node of an output of a power converter, a first non-inverting input configured to couple to a first voltage node, a second non-inverting input, and an output. The second amplifier includes an inverting input coupled to the output of the first amplifier, a non-inverting input coupled to a second voltage node, and an output. The device also includes a first transistor coupled to the output of the first amplifier and having a control terminal coupled to the output of the second amplifier, a capacitor coupled to a ground node and to the second non-inverting input of the first amplifier, and a current node coupled to the capacitor.