Abstract: A semiconductor package includes a package substrate, a first semiconductor device on an upper surface of the package substrate, a second semiconductor device on an upper surface of the first semiconductor device, a first connection bump attached to a lower surface of the package substrate, a second connection bump interposed between and electrically connected to the package substrate and the first semiconductor device, and a third connection bump interposed between and electrically connected to the first semiconductor device and the second semiconductor device. The first semiconductor device has an edge and a step at the edge.
Type:
Grant
Filed:
February 20, 2019
Date of Patent:
October 13, 2020
Assignee:
Samsung Electronics Co., Ltd.
Inventors:
Yeong-Kwon Ko, Jun-Yeong Heo, Un-Byoung Kang, Ja-Yeon Lee
Abstract: Oxide films are deposited under conditions generating a silicon-rich oxide in which silicon nanoclusters form either during deposition or during subsequent annealing. Such deposition conditions include those producing films with optical indices (n) greater than 1.46. The method of the present invention reduces the TID radiation-induced shifts for the oxides.
Type:
Grant
Filed:
February 28, 2006
Date of Patent:
September 20, 2011
Assignee:
The United States of America as represented by the Secretary of the Navy
Inventors:
Harold L Hughes, Bernard J Mrstik, Reed K Lawrence, Patrick J McMarr