Abstract: A method for depositing high quality indium phosphide layers heteroepitaxly on GaAs substrates by controlling the growth between them of an interfacial quaternary alloy of In.sub.y Ga.sub.1-y As.sub.x P.sub.1-x.

Abstract: A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 3,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of less than 1 .mu.m and a micro Vickers hardness of 3,500 kg/mm.sup.2 under a load of 100 g, and an amorphous silicon nitride having a micro Vickers hardness of 2,200 kg/mm.sup.2 under a load of 100 g, and is produced by blowing a nitrogen depositing source and a silicon depositing source on a substrate heated at 500.degree.-1,900.degree. C. with a blowpipe composed of a pipe assembly wherein a first pipe for the nitrogen depositing source is surrounded with the second pipe for silicon depositing source and the distance from an opening end of the first pipe to the substrate is shorter than a distance from an opening end of the second pipe to the substrate.

Abstract: A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 3,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of less than 1 .mu.m and a micro Vickers hardness of 3,500 kg/mm.sup.2 under a load of 100 g, and an amorphous silicon nitride having a micro Vickers hardness of 2,200 kg/mm.sup.2 under a load of 100 g, and is produced by blowing a nitrogen depositing source and a silicon depositing source on a substrate heated at 500.degree.-1,900.degree. C. with a blowpipe composed of a pipe assembly wherein a first pipe for the nitrogen depositing source is surrounded with a second pipe for the silicon depositing source and the distance from an opening end of the first pipe to the substrate is shorter than the distance from an opening end of the second pipe to the substrate.

Abstract: An apparatus and process for purifying and separating a crystalline compound from its impurities in a slurry containing same, said process comprising introducing said slurry under pressure into a cylindrical pressurized filter-washer having a substantially constant inside diameter which is substantially free of protrusions, said filter-washer having a filter means with a screen contiguous with an internal surface of the cylinder, said screen having a smooth surface sufficient to provide minimum friction so as to allow a moving bed of crystals to move past it and withdraw a filtrate without blinding, filtering the crystals, withdrawing the filtrate, and moving the crystal bed past the filter screen, applying a controlled restraining force on the crystal bed so as to prevent relaxation and channeling and over-compacting of said bed by means of a compression and harvest means substantially contiguous with said inside diameter and located between said filter means and an exit means, said compression and harvest m

Abstract: A process for producing food vitamin concentrate from food yeast in which the starting feedstock comprising a by-product from the production of dry wines obtained after separation of a new wine and comprising a residue of the starting strains of wine yeast, highly-tolerant to increased concentrations of the alcohol produced thereby during fermentation, and highly-tolerant to pH of the must below 3.5, with large homogeneous size cells after separation of the remaining wine by pressing and dilution with water in a ratio of 1:1.5-3.0, based on the pressed yeast, is subjected to autolysis; the resulting autolysate is heated to the temperature of 80.degree.-90.degree. C., then cooled to 0.degree.-2.degree. C. and separated from the residue. The recovered autolysate is concentrated to give the desired product.

Abstract: A process for depositing films of uniform thickness on silicon wafers at a uniform deposition rate among all wafers processed at the same time. The wafers are vertically oriented and arranged in a spaced-apart mutually parallel fashion and are supported within a horizontally-oriented long quartz tube which is evacuated at one end by a vacuum pump. A heating element surrounding the tube heats the wafers supported within it. At least one type of reactant gas is introduced into the enclosure in a generally confined region below the wafers and between the wafer arrangement and a wall of the enclosure. The gas, which is directed upwards between adjacent wafers and dispersed across the entire surface of the wafers, chemically reacts to deposit a uniform film on the wafers. Unreacted and exhaust gases are evacuated from the enclosure by the vacuum pump in a horizontal direction of flow above the wafer arrangement.

Abstract: This invention relates to a process for manufacturing monocrystalline silicon.According to this process, the fused zone Z is formed on a cylinder (1) of polycrystalline silicon and a film (5) is "drawn" by means of a seed-plate (3). The fused zone Z is obtained by resorting to heating means, notably one or several electron guns whose beam is situated in a plane P.sub.2.By means of this process, monocrystalline silicon is manufactured in the form of tape.

Abstract: N-substituted perhydro-s-triazine compounds can be used to increase the solubility of alkali or alkaline earth metal salts in an organic medium. Increasing the solubility of such salts catalyzes the reaction between the salts and other components of the organic medium. For example, 5 percent of a tris(n-octylpolyoxyethylene)-N,N',N"-perhydro-s-triazine compound catalyzes the reaction between sodium iodide and n-octyl bromide at 80.degree. C. for 1 hour to form 100 percent yield of n-octyl iodide.

Abstract: Heat exchanger for crystallization of crystallizable suspensions while in motion including a vertical cylindrical tank divided into an upper or deposit section containing an agitating vane and a processing section containing a plurality of superimposed subsections each partially defined by screens containing flow passes for the suspension, said screens being arranged such that alternate passes are in the periphery with the other passes in the center, heat exchanging elements located in each one of the subsections, an axial vertical shaft with internal ducts and labyrinths to which are coupled the agitating vane of said shaft a frame containing nozzles for feeding and venting the fluid that exchanges heat with said suspension, said frame resting on at least two hydraulic pistons, said pistons being located on a bridge at the upper part of the deposit section, and a discharge valve in the bottom of the lower subsection for processed suspension.

Abstract: A method for producing hexagonal, laminar, alpha aluminum oxide monocrystals having a grain size of about 16 to about 250 microns, and a diameter to thickness ratio of about 3:1 to about 7:1. Aluminum hydroxide of particle size greater than 60 microns is calcined in the presence of a fluorine-containing mineralizer at a temperature of greater than 1200.degree. C. but no more than 1450.degree. C., and the desired grain size is separated from the calcinate.

Abstract: Improved granular cocoa which is sufficiently dense and stiff but nevertheless is readily soluble in water, even in cold water, can be produced without using any binder by subjecting a cocoa powder of which fat content is 12-29% to compression, feeding the compressed powder to a roller press thereby forming small plate-like agglomerates which are 0.5-3 mm thick, and crushing and sifting the agglomerates to obtain 10-30 mesh granules of cocoa. The physical properties of the cocoa granules are further improved by ageing the granules at temperatures below about 27.degree. C., most preferably at 15-25.degree. C., for a few hours to several days. the starting cocoa powder may have been added with powdered sugar and/or milk.

Abstract: An arrangement is provided for controlling the quantity and period of charging of pitch coke furnaces whose pitch supply conduits are connected to a heatable ring conduit and are in connection with at least one pitch reservoir via this ring conduit. In the pitch supply conduits, pitch dosing containers are arranged, which containers rest on bearing-pressure measuring means. Via these bearing-pressure measuring means, the respective filling level of the pitch dosing containers is determinable.

Abstract: The improved production of sodium sulfate, potassium sulfate and other valuable salts from salt plant bitterns or the like wherein initial reduction in sulfate ion concentration yields salt cake and greatly facilitates the selective recovery of potassium and other valuable by-product salts. The process includes cooling the bitterns while below a certain concentration to produce glauber salt, followed by successive solar evaporation steps to yield harvestable potash salts. The salts are selectively treated and then refined by flotation. The flotation overflow is converted to potassium sulfate product by decomposition and crystallization steps and the underflow provides a recycle salt mixture for converting the glauber salt to salt cake.

Abstract: Si-crystals with columnar structures are produced by contacting a silicon melt with a melt-resistant carrier body having periodically spaced crystallization-seed centers on a surface thereof facing the melt, establishing a controlled temperature gradient at the interface between the carrier body surface and the melt so that crystallization of the melt onto the seed centers occurs and then removing the body with the adhering crystal layer from the melt. In a preferred embodiment, an elongated traveling web having a select hole pattern therein functioning as the seed centers, is utilized as a carrier body.

Abstract: Method for forming an elongated silicon crystalline body using a specially designed capillary die. The method uses a higher melt meniscus in the central region of the growth front than at the edges of the front. The edges of the top surface of the die are not concentric with the ribbon cross-section.

Abstract: A method is disclosed for peeling thin layers of crystal from the substrates on which they have been grown. A thin layer of single-crystal material is grown on a single-crystal substrate having a lower melting point temperature than the layer. The layer and substrate are then brought to the melting point temperature of the substrate material, and the layer is contacted to a hot object so that heat flows through the layer to the substrate for liquifying the substrate material contiguous to the layer. The layer is peeled from the substrate where such liquification has occurred.

Abstract: Gallium phosphide single crystals with low defect density which are manufactured by the liquid encapsulation Czochralski pulling method and which are characterized in that they are doped or not doped with at least one kind of dopant which is electrically active in gallium phosphide and are so doped as to have at least one dopant such as boron or some other strongly reducing impurity which has a reducing activity equal to or greater than that of boron remain in the crystals in a quantity not less than 1.times.10.sup.17 cm.sup.-3 and the sum of dislocation etch pit density and small conical etch pit density of the surface (111)B which has been subjected to etching for 3 to 5 minutes with RC etchant at a temperature of 65.degree. C..about.75.degree. C. after removing the mechanically damaged layer on the surface does not exceed 1.times.10.sup.5 cm.sup.-2, and a method of manufacturing the crystals.

Abstract: A process for producing Ni-Mn-Zn ferrite single crystal for high frequency wherein a sample comprising 10-30 molar percent of NiO, 1.8-12 molar percent of MnO, 15-35 molar percent of ZnO and 49-53 molar percent of Fe.sub.2 O.sub.3 is melted and subjected to growing into a crystal under an oxygen partial pressure of below about 100 Kg/cm.sup.2.

Abstract: Disclosed is a balloon catheter including a catheter and a balloon bonded to the catheter through an adhesive in which the outer surface of the balloon is contiguous to the outer surface of the catheter through a smooth surface. In this balloon catheter, the balloon is tightly fixed to the catheter and there is no risk of separation of the balloon. Further, since the balloon catheter has a smooth surface in the connecting portion, insertion of the balloon catheter into a blood vessel and withdrawal of the balloon catheter from the blood vessel can be performed very easily and smoothly. Accordingly, this balloon catheter can be used very advantageously for the angiography.

Abstract: Monocrystalline gadolinium gallium garnet is prepared by the Czochralski growth process from a melt composed of the oxides of gadolinium and gallium. In order for this process to produce uniform crystal growth, the growing crystal must support a meniscus of liquid above the level of the surrounding melt. This meniscus is held up by the surface tension between the liquid and the growing crystal. It has been established that impurities in the meniscus region lower the surface tension of the liquid phase causing the meniscus to lose contact with the solid phase resulting in nonuniform crystal growth. By the addition of approximately 100 ppm of calcium into the melt, a counteracting effect is produced causing the meniscus to remain in contact with the growing crystal.