Abstract: A method is presented for optical control of the quality of a process of chemical mechanical planarization (CMP) performed by a polishing tool applied to an article having a patterned area. The article contains a plurality of stacks each formed by a plurality of different layers, thereby defining a pattern in the form of spaced-apart metal regions. The method is capable of locating at least one of residues, erosion and dishing conditions on the article. At least one predetermined site on the article is selected for control. This at least one predetermined site is illuminated, and spectral characteristics of light components reflected from this location are detected. Data representative of the detected light components is analyzed for determining at least one parameter of the article within the at least one illuminated site.

Abstract: Disclosed is a system, and regression-based method utilizing optical data, for use in identifying material systems which have been cut to have an optical axis oriented as desired with respect to a alignment surface. The present invention is particularly well suited to qualification of material systems such as optical compensators and retarders, which ideally have an optical axis oriented perpendicular to, or parallel to, an alignment surface.

Abstract: A method and apparatus for detecting the endpoint of CMP processing on semiconductor wafer in which a lower layer of material with a first reflectivity is positioned under an upper layer of material with a second reflectivity. Initially an endpoint site is selected on the wafer in a critical area where a boundary between the upper and lower layers defines the desired endpoint of the CMP process. The critical area on the wafer is generally determined by analyzing in the circuit design and the polishing characteristics of previously polished test wafers to denote the last points on the wafer from which the upper layer is desirably removed by CMP processing. After an endpoint site is selected, a light beam impinges the polished surface of the wafer and reflects off of the surface of the wafer to a photo-sensor. The photosensor senses the actual intensity of the reflected light beam.

Abstract: A method and apparatus to analyze the aerial image of an optical system using a subwavelength slit. A slit configuration yields a higher signal-to-noise ratio than that achievable with a round aperture. The slit also allows the polarization of the aerial image to be analyzed. In an alternative embodiment a tunneling slit is used. The tunneling slit comprises an optically transparent ridge-like structure mounted to a substrate, the combined structure covered by a thin, planar metal film.

Abstract: An apparatus and a method for calibrating and normalizing a stereolithographic apparatus so that a reaction means directed by a positioning means supplied with positioning means information may be positioned accurately on a designated surface of a working medium. One or more sensors fixed in location with respect to the designated surface of the working medium are utilized to correlate positioning means information with specific locations on the designated surface of the working medium. Other locations intermediate the specific locations may then be determined by the technique of linear interpolation.

Abstract: A three-dimensional image measuring device which comprises a light source; a plane image forming unit for forming a plane image in a space in its depth direction .on the basis of light emitted from the light source; a scanning unit for moving and scanning the plane image formed by the plane image forming means in its depth direction; an object to be measured disposed in the space where the plane image is formed; a light receiving unit for measuring a strength of light scattered on a surface of the object as the plane image is moved and scanned and; a distance measuring unit for measuring the distance to the object on the basis of the output of the light receiving unit, whereby a three-dimensional image with least reduced invisible area is easily and accurately measured in a short time without using the principle of triangulation.

Abstract: A method and system for gauging deviations of a surface of a test part from a preselected nominal surface profile is disclosed. The system includes a support having a master surface that is substantially a matched or mating surface of the nominal surface profile of the test part and a thin layer of an attenuating medium such as a dye liquid between the master and test surfaces. Electromagnetic radiation is directed through the support and master surface and through the attenuating layer onto the reflective surface of the test part. An image sensor such as a camera is positioned to receive an image of the radiation reflected by the test part surface back through the attenuating layer and support, with the intensity of such radiation across the image varying as a function of the deviation of the test part surface from the nominal surface profile.