Abstract: A method for forming an ultra hard material layer is provided. The method includes disposing a metallic liner inside the periphery of a refractory metal enclosure, introducing ultra hard material feed stock into the enclosure, and sintering using HPHT processing and cooling to form the ultra hard material layer, substantially free of peripheral cracking, chipping and fracturing.
Abstract: A film of zinc oxide electrochemically deposited from an aqueous solution is subjected to heat treatment at a temperature equal to or higher than 150° C. and equal to or lower than 400° C. in a nitrogen or inert gas atmosphere that contains oxygen, thereby obtaining a zinc oxide film that is low in electric resistance without impairing the light transmittance of the zinc oxide film.
Abstract: A three-dimensional object of a desired shape is made by irradiating an optical beam on a metal powder layer to form a sintered layer and by laminating such sintered layer one above another. A metal powder composition for use in making such a three-dimensional object includes an iron-based powder material, a nickel and/or nickel alloy powder material, a copper and/or copper alloy powder material, and a graphite powder material. The graphite powder material acts to enhance the wettability during melting and to reduce microcracks during solidification.
Abstract: Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.
Type:
Grant
Filed:
July 8, 2003
Date of Patent:
May 29, 2007
Assignee:
Applied Materials, Inc.
Inventors:
Michael X. Yang, Ming Xi, Russell C. Ellwanger, Eric B. Britcher, Bernardo Donoso, Lily L. Pang, Svetlana Sherman, Henry Ho, Anh N. Nguyen, Alexander N. Lerner, Allen L. D'Ambra, Arulkumar Shanmugasundram, Tetsuya Ishikawa, Yevgeniy Rabinovich, Dmitry Lubomirsky, Yeuk-Fai Edwin Mok, Son T. Nguyen