Abstract: A display panel including a corner includes: a substrate including a display area including a front display area, and a peripheral area outside the display area; an insulating layer on the substrate in the display area and the peripheral area, where an outer groove or an outer through hole is defined in the insulating layer in the peripheral area; an upper inorganic pattern layer on the insulating layer, where the upper inorganic pattern layer includes a protruding tip protruding toward a center of the outer groove or a center of the outer through hole; and a front display element on the insulating layer and overlapping the front display area. The upper inorganic pattern layer is apart from the front display element.

Abstract: Provided are a display substrate, a preparation method thereof, and a display apparatus. The display substrate includes a flexible substrate, a driving structure layer disposed on the flexible substrate, a light-emitting element disposed on the driving structure layer, and an encapsulation layer disposed on the light-emitting element. The flexible substrate includes a first flexible substrate layer, a first connection layer disposed on the first flexible substrate layer, and a second flexible substrate layer disposed on the first connection layer, wherein, the first connection layer includes at least one first via, and the first flexible substrate layer includes at least one first groove provided corresponding to the first via; the first via and the first groove are mutually communicated, and an orthographic projection of the first groove on the first flexible substrate layer includes an orthographic projection of the first via on the first flexible substrate layer.

Abstract: A transistor comprises a substrate, a pair of spacers on the substrate, a gate dielectric layer on the substrate and between the pair of spacers, a gate electrode layer on the gate dielectric layer and between the pair of spacers, an insulating cap layer on the gate electrode layer and between the pair of spacers, and a pair of diffusion regions adjacent to the pair of spacers. The insulating cap layer forms an etch stop structure that is self aligned to the gate and prevents the contact etch from exposing the gate electrode, thereby preventing a short between the gate and contact. The insulator-cap layer enables self-aligned contacts, allowing initial patterning of wider contacts that are more robust to patterning limitations.

Abstract: A display device includes: first and second display panels adjacent to each other along one direction, wherein: each of the first and second display panels includes a substrate, and a display portion on the substrate and includes a plurality of pixels including a pixel circuit layer on the substrate, at least one transistor, a display element layer on the pixel circuit layer, and at least one light emitting element emitting light; the substrate of the first display panel and the substrate of the second display panel are engaged with each other in a plan view and a cross-sectional view; the display portion of the first display panel and the display portion of the second display panel are engaged with each other in a plan view and a cross-sectional view; and a boundary between the display portion of the first display panel and the display portion of the second display panel.

Abstract: A display device including: a substrate; an active layer, and including channel and conductive regions; a first conductive layer including a driving gate electrode and a scan line in a first direction; a second conductive layer including a storage line; a third conductive layer including a first connecting member above the storage line; an insulating layer between the storage line and the first connecting member; and a data line and a driving voltage line crossing the scan line in a second direction, wherein the first connecting member electrically connects the driving gate electrode and a conductive region, the driving voltage line overlaps the first connecting member, the insulating layer includes first and second sub-insulating layers, and an edge of the second sub-insulating layer substantially overlaps an edge of the first connecting member in a thickness direction of the display device.

Abstract: An OLED display screen and a method for manufacturing the same are provided. The OLED display screen includes a first substrate; a fastener disposed on a side of a surface of the first substrate; a second substrate disposed on a surface of the fastener far away from the first substrate; and a flexible display module extending and bent from a surface of the first substrate far away from the fastener to a surface of the second substrate far away from the fastener, wherein a gap without a filler is provided between the flexible display module and the fastener.

Abstract: Provided is a mother substrate comprising a glass substrate including a plurality of cutting lines, an organic film overlapping the plurality of cutting lines on the glass substrate, and a plurality of cells spaced apart from each other with each of the plurality of cutting lines therebetween on the glass substrate.

Abstract: A display substrate has a display area, an opening area and an isolation area located between the display area and the opening area and surrounding the opening area, and the display area is disposed at least partially around the opening area. The display substrate includes a flexible base having a via hole located in the opening area. The flexible base includes an amorphous silicon layer. The amorphous silicon layer includes a first portion located in the isolation area and a second portion located in the display area, and a thickness of the first portion is greater than a thickness of the second portion.

Abstract: A flexible display panel includes a glass substrate, a circuit layer disposed on the glass substrate and configured to drive a pixel, a light-emitting element layer disposed on the circuit layer, an encapsulation layer which covers the circuit layer and the light-emitting element layer, a polarizing plate disposed on the encapsulation layer, and a cover glass disposed on the polarizing plate, at least one of the glass substrate and the cover glass includes a buffer portion, the buffer portion includes an organic filler and glass, the glass of the buffer portion has a thickness less than or equal to a thickness of the glass substrate and includes a pattern of a specific shape, thus, rigidity of a folding portion in which the buffer portion is located can be increased due to the glass in the buffer portion.

Abstract: A display device includes a substrate and a transistor disposed on the substrate and including a semiconductor layer, wherein the semiconductor layer includes a mesh structure, and wherein a plurality of openings are formed in the semiconductor layer.

Abstract: The present invention is about display technology. A display panel and a display device are provided. The display panel includes: a substrate layer; a data line arranged on the substrate layer; a color resist layer which is arranged on the substrate layer and located at two sides of the data line, and includes grooves which are located at least at one side of the data line; a shielding layer arranged on the color resist layer and arranged over the data line; a pixel electrode layer arranged over the shielding layer; and a passivation layer arranged between the shielding layer and the pixel electrode layer and covering the shielding layer and the color resist layer.

Abstract: A light-emitting diode includes a substrate, a distributed Bragg reflector (DBR) structure and a semiconductor layered structure. The DBR structure is disposed on the substrate. The semiconductor layered structure is disposed on the DBR structure opposite to the substrate, and is configured to emit a light having a first wavelength. The DBR structure has a reflectance of not greater than 30% for the light having the first wavelength, and a reflectance of not smaller than 50% for a laser beam having a second wavelength that is different from the first wavelength.

Abstract: A method for manufacturing an electronic device is provided by the disclosure. A flexible substrate is provided, in which the flexible substrate has two surfaces opposite to each other. A circuit is formed on one of the surfaces of the flexible substrate. A through hole is formed in the flexible substrate. A conductive bridge is formed in the through hole. A supporting substrate is attached to the other surface of the flexible substrate. An opening penetrating the supporting substrate is formed, and the opening corresponds to the through hole in the flexible substrate. An electronic component is mounted on the supporting substrate, and the electronic component is allowed to be electrically connected to the circuit through the conductive bridge.

Abstract: A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.

Abstract: The present disclosure provides a flexible display substrate, a method for preparing the same and a display device. The flexible display substrate includes a flexible substrate and a display function layer, the display function layer including a first metal layer and a second metal layer; the flexible display substrate includes a display area and a peripheral area, and the peripheral area including a bending area, a first wiring area located between the display area and the bending area, and a second wiring area located on a surface of the bending area away from the display area; the signal wiring of the first wiring area and the second signal wiring of the second wiring area being electrically connected through the signal connection line of the bending area, and the signal connection line being made of the first metal layer and/or the second metal layer.

Abstract: A semiconductor processing adhesive tape that includes a substrate, a buffer layer which is provided on at least one side of the substrate, and an adhesive layer which is provided on the other side of the substrate, wherein the buffer layer has an energy to break at 23° C. of 13 to 80 MJ/m3.

Abstract: A method includes depositing a first dielectric layer over a first conductive feature, depositing a first mask layer over the first dielectric layer, and depositing a second mask layer over the first mask layer. A first opening is patterned in the first mask layer and the second mask layer, the first opening having a first width. A second opening is patterned in a bottom surface of the first opening, the second opening extending into the first dielectric layer, the second opening having a second width. The second width is less than the first width. The first opening is extended into the first dielectric layer and the second opening is extended through the first dielectric layer to expose a top surface of the first conductive feature.

Abstract: The present disclosure is directed to a method of forming a polarization grating structure (e.g., polarizer) as part of a grid structure of a back side illuminated image sensor device. For example, the method includes forming a layer stack over a semiconductor layer with radiation-sensing regions. Further, the method includes forming grating elements of one or more polarization grating structures within a grid structure, where forming the grating elements includes (i) etching the layer stack to form the grid structure and (ii) etching the layer stack to form grating elements oriented to a polarization angle.

Abstract: There is set forth herein an optoelectrical device, comprising: a substrate; an interposer dielectric stack formed on the substrate, the interposer dielectric stack including a base interposer dielectric stack, a photonics device dielectric stack, and a bond layer that integrally bonds the photonics device dielectric stack to the base interposer dielectric stack. There is set forth herein a method comprising building an interposer base structure on a first wafer having a first substrate, including fabricating a plurality of through vias in the first substrate and fabricating within an interposer base dielectric stack formed on the first substrate one or more metallization layers; and building a photonics structure on a second wafer having a second substrate, including fabricating one or more photonics devices within a photonics device dielectric stack formed on the second substrate.

Abstract: A display panel includes a peripheral region adjacent to a display region. The display region includes a hole peripheral region, and a recessed region is overlapped with the hole peripheral region. The display panel also includes a barrier layer with a penetrating opening overlapped with the recessed region, a circuit layer on the barrier layer and including a transistor and insulating layers, and a device layer including an organic light emitting area coupled to the circuit layer. In addition, a module hole is overlapped with the hole peripheral region and penetrates the base substrate, and a first groove is overlapped with the hole peripheral region and corresponds to a portion of the base substrate that is recessed from a top surface of the barrier layer and that encloses the module hole. The insulating layers include inorganic layers and an organic layer having side portions enclosing the module hole.