Abstract: An improved process for manufacturing a spin valve structure that has buried leads is disclosed. A key feature is the inclusion in the process of a temporary protective layer over the seed layer on which the spin valve structure will be grown. This protective layer remains in place while the buried leads as well as longitudinal bias means are formed. Processing includes use of photoresist liftoff. The protective layer is removed as a natural byproduct of surface cleanup just prior the formation of the spin valve.

Abstract: An enclosed solvent and aqueous decompression processing system includes a chamber for holding an object to be processed. At least one vacuum pump applies a negative gauge pressure to the chamber to remove air and other non-condensable gases. Means are provided for introducing a solvent to the evacuated chamber to treat the object contained within. Treatment may be in the form of coating, etching, deposition, cleaning, stripping, plating, adhesion, dissolving, filtering or any other process in which material is removed or deposited on a solid surface by transfer from or to a liquid phase. A first system removes pressure from the chamber to produce vapor bubbles for processing. A second system increases pressure by ceasing to apply vacuum or adding non-condensable gases. The system includes recovery of the solvent from the chamber and object.

Abstract: A wafer cleaning apparatus includes a rinsing container in which wafers to be cleaned are positioned and four sets of nozzles arranged in the rinsing container to be symmetric with respect to each other. The nozzles generate water jets toward the wafers for performing a wafer cleaning process. In a first phase of the wafer cleaning process, the first nozzle set and the fourth nozzle set are turned on to generate water jets in diagonally opposite directions with respect to the wafers for a given period. In a second phase, the second nozzle set and the third nozzle set are turned on to generate water jets in diagonally opposite directions with respect to the wafers for a given period. In a third phase, the third nozzle set and the fourth nozzle set are turned on to cause an up-rising water flow from a bottom of the container to a top open side thereof for expelling contaminants dissolved or suspended in the water out of the container.

Abstract: Low acoustic solid wave attenuation structures are formed with an electroformed nickel mold, and are incorporated within acoustic ink emitters, between the focusing lens and surface of an ink layer. The structures have characteristics of low attenuation of acoustic waves to increase the efficiency of acoustic wave transmission within the acoustic ink emitter. Using the described structures, acoustic ink printers can accurately emit materials having high viscosity, including hot melt inks.

Abstract: A method is provided for making optical waveguide structures in a semiconductor device wherein a rectangular cross-section low index of refraction material is encapsulated in a trench by a high index of refraction material. The waveguide structures may be made in a device containing copper conductors in trenches by forming new trenches to hold the optical waveguide. Copper conductor containing trenches may also be made in an electronic component containing waveguide structures and a further method is provided for forming an optical waveguide structure by replacing a copper containing trench with the waveguide structure in an electronic component having a plurality of copper containing trenches. All the methods use conventional techniques so that the fabrication of a semiconductor device containing both optical waveguide structures and copper conductor structures can be made both efficiently and economically.

Abstract: A method and apparatus for improving etch uniformity in reticle etching by eliminating local effects at the edge of the reticle is disclosed. The present invention relates to a reticle frame which surrounds the reticle. The reticle frames are patterned with a pattern profile similar to that of the reticle to prevent edge uniformities of the reticle by allowing uniform plasma etching of the entire reticle surface. The reticle frames may also be used to move the reticle in and out of etch chambers without damaging them.

Abstract: A wafer flattening process and system enables a reduction of the surface roughness of a wafer resulting from local etching. A silicon wafer W is brought into close proximity to a nozzle portion 20 to feed SF6 gas to an alumina discharge tube 2, a plasma generator 1 is used to cause plasma discharge and spray a first activated species gas from the nozzle portion 20 to the silicon wafer W side, an X-Y drive mechanism 4 is used to make the nozzle portion 20 scan to perform a local etching step. Then the silicon wafer W is moved away from the nozzle portion 20 and O2 gas and CF4 gas are fed to the alumina discharge tube. At this time, the O2 gas is set to be greater in amount than the CF4 gas. When this mixed gas is made to discharge to generate plasma, a second activated species gas diffuses from the nozzle portion 20 to the entire surface of the silicon wafer W.

Abstract: Metallic bumps are formed for electrical interconnection between the charge plate and the charge drive electronics. This is achieved by having improved electrical connection between an ink jet charge plate and associated charge leads is promoted. First, a mask is aligned to permit plating of an etch mask on the charge plate coupon on the side opposite the charge plate circuitry, so as to place masked regions directly across the coupon from the contact pads of the charge plate circuitry. All the copper alloy charge plate coupon is then etched away except the small portions between the termination and the etch mask. The bump thus formed is used to provide a high pressure point electrical connection to the charge plate.