Abstract: A method for forming an electrical contact for a semiconductor device comprises the steps of providing a semiconductor wafer section having a major surface with a plurality of conductive pads thereon and electrically coupling each pad with an elongated electrical interconnect. Next, each electrical interconnect is encased in a dielectric and the dielectric is sectioned to expose a portion of each interconnect. An inventive structure which can be formed by the inventive method is also described.
Type:
Grant
Filed:
December 11, 2001
Date of Patent:
March 23, 2004
Assignee:
Micron Technology, Inc.
Inventors:
Walter L. Moden, Larry D. Kinsman, Warren M. Farnworth