Patents Examined by Jamie M Valentine
  • Field effect transistor with narrow bandgap source and drain regions and method of fabrication
    Patent number: 9048314
    Abstract: A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film formed in the silicon layer on opposite sides of the gate electrode.
    Type: Grant
    Filed: August 21, 2014
    Date of Patent: June 2, 2015
    Assignee: Intel Corporation
    Inventors: Robert S. Chau, Suman Datta, Jack Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew Metz