Abstract: The invention provides new photoresist compositions that contain a resin binder and a blend of photoacid generators. Photoacid generator blends of the invention produce photoacids that differ in acid strength and/or size.

Abstract: A method of producing a semiconductor substrate, particularly one having a buffer coat layer and sealed in a mold resin, is disclosed. The method patterns a polyimide film, etches an insulating film or passivation film using the resulting polyimide pattern as a mask, and then ashes the polyimide pattern by oxygen plasma to thereby obviate the influence of an etchant used for etching. Therefore, the method is capable of reducing the corrosion of portions where a metallic wiring pattern is exposed to the outside. Because the oxygen ashing step is followed by heat treatment, the influence of oxygen which would lower the adhesion strength between the polyimide pattern and a mold resin is eliminated. As a result, tight adhesion of the polyimide pattern to the mold resin is insured. Further, when a first heat treatment is effected after the patterning of the polyimide film, a solvent in the polyimide film is evaporated.

Abstract: A photographic element contains a filter dye of the Formula (I): ##STR1## wherein R.sup.1 -R.sup.4 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group or a substituted or unsubstituted heteroaryl group; L.sup.1, L.sup.2 and L.sup.3 each independently represent substituted or unsubstituted methine groups; M.sup.+ represents a proton or an inorganic or organic cation.

Abstract: A method of manufacturing plates assembleable in a stack to provide a mold to form fastener elements includes applying a photoresist material to at least one side of the plate. The photoresist material is exposed to light. Portions of the photoresist material are removed based on the light exposure. Acid is applied to the plate, dissolving portions of the plate exposed to the acid and creating cavities.

Abstract: A method for use in fabricating an electro-optic structure on a substrate having an optical waveguide formed in an upper surface thereof, comprises the steps of forming a layer of organic dielectric material, such as a benzocyclobutene (BCB) resin, on the substrate upper surface, forming an interface layer on an upper surface of the organic dielectric layer, and forming an electrically isolated electrode on an upper surface of the interface layer such that an electrical field can be induced in the optical waveguide.

Abstract: Infrared sensitive photographic elements comprise an opaque film support, an infrared sensitized silver halide emulsion layer and a hydrophilic colloid protective layer on one side of the film support, said protective layer comprising colloidal silica having an average particle size lower than 15 nanometers.The elements have an increased exposure latitude upon exposure to infrared laser diodes, and higher maximum density upon photographic processing.

Abstract: Sub-micron contacts/vias and conductive lines in a dielectric layer are formed by etching through a photoresist mask containing openings having a dimension less than that achievable by conventional photolithographic techniques. Such minimal size openings are obtained by initially forming an oversized opening by conventional photolithographic techniques and then reducing the size of the opening by forming a sidewall spacer, such as a dielectric sidewall spacer, within the opening. In an embodiment, a plurality of openings are formed in first photoresist layer, each of which openings is provided with a sidewall spacer. The openings are filled with a filling material, such as a second photoresist material, and the photoresist mask and sidewall spacers are removed leaving a plurality of masking portions containing the second photoresist material. An underlying conductive layer is then etched through masking portions to form conductive lines having sub-micron dimensions.

Abstract: A first resist pattern, which is capable of generating an acid, is formed on a semiconductor device layer. Over the first resist pattern, a layer of a second resist, which is capable of undergoing an cross-linking reaction in the presence of an acid, is formed. Then, a cross-linked film is formed in portions of said layer of the second resist at the boundary with said first resist by action of an acid from said first resist. Thereafter, non-cross-linked portions of said second resist are removed to form a finely isolated resist pattern. The semiconductor device layer is etched, via a mask of said finely isolated resist pattern, to form a fine spaces or holes.

Abstract: The present invention provides a method for producing a film forming, fractionated novolak resin having consistent molecular weight and superior performance in photoresist composition, by isolating such novolak resin fractions without high temperature distillation. A method is also provided for producing photoresist composition from such a fractionated novolak resin and for producing semiconductor devices using such a photoresist composition.

Abstract: A method of processing a substrate having the steps of placing a substrate for forming an LCD on a support, mounting a cover on the substrate in such a manner that a clearance is formed from at least either surface of the substrate placed on the support, introducing developer or pure water into the clearance, bringing the developer or pure water into contact with at least either surface of the substrate, processing the substrate with the developer or pure water, removing the cover from the substrate, and discharging the substrate from the support.

Abstract: A method for controlling the interface in a composite between the matrix material and reinforcing filaments or fibers in a composite structure which comprises the application of a patterned coating or combination of coatings on the reinforcing filaments or fibers to vary the bond between the reinforcement and the matrix. Proportioning of weak- and strong-bonded areas, their respective strengths, and design of bonding patterns can be tailored to the materials requirements of the composite.This method can be employed to prepare metal, ceramic and polymer matrix composites.

Abstract: In a method for producing photolithographic patterns in the submicron range, applied on a substrate is a photoresist layer comprised of a polymer containing carboxylic acid anhydride groups and tert. butylester or tert. butoxy-carbonyloxy groups, a photoactive component--in the form of an ester of a naphthoquinonediazide-4-sulfonic acid with an aromatic or aliphatic-aromatic hydroxy compound--and a suitable solvent; the photoresist layer is then dried, exposed in an imaging manner, and subjected to a temperature treatment in the range of between 120.degree. and 150.degree. C. for a duration of 100 to 600 seconds. The photoresist layer is then subjected to a liquid silylation and is dry-developed in an anisotropic oxygen plasma.

Abstract: The invention proposes an improved method for the pre-treatment of a photoresist layer formed on a substrate surface prior to pattern-wise exposure of the photoresist layer to actinic rays, in which extraneous portions of the resist layer formed by overspreading of the photoresist solution as in the marginal zone of the patterning area and on the peripheral and back surfaces of the substrate, by dissolving away with a cleaning solution. In contrast to the conventional cleaning solutions consisting entirely or mainly of an organic solvent capable of dissolving the photoresist composition, the cleaning solution used in the inventive method is an aqueous alkaline solution containing a water-soluble alkaline compound dissolved in an aqueous medium consisting of water and a limited amount of a water-miscible organic solvent such as monohydric alcohols, alkyleneglycol monoalkyl ethers and aprotic solvents. The cleaning solution may optionally contain an anti-corrosion agent.

Abstract: A photosensitive liquid precursor solution including titanium carboxyketoesters or titanium carboxydiketonates polymerizes upon exposure to ultraviolet radiation. The solution is applied to an integrated circuit substrate, masked, and exposed to ultraviolet radiation to pattern the liquid precursor film. Unexposed portions of the film are removed in a developer solution including alcohol and water. The remaining portion of the film constitutes a pattern that may be annealed to form a metal oxide.

Abstract: The present invention relates to a method of making a waterless lithographic printing plate having an image by which printing can be effected without using dampening water, comprising the steps of (1) providing a waterless lithographic fresh printing plate by layering on a substrate a first layer which converts laser light to heat and a second layer which has an ink-repellent surface, sequentially, (2) exposing the waterless lithographic fresh printing plate laser light by irradiating laser light which can be absorbed by the first layer, and (3) applying a liquid having a surface tension of 25-50 dyn/cm.sup.2 to the second layer, and abrading the surface of the second layer to remove the exposed portion of the second layer selectively so that an image enabling printing without using dampening water can be formed.

Abstract: After forming a TiN film on a semiconductor substrate, a surface treatment agent in a gas phase, which is obtained by bubbling trimethylsilyl methylsulfonate with a nitrogen gas, is supplied onto the TiN film. The TiN film is then coated with a chemically amplified positive resist including an acid generator and a compound which can attain alkali solubility through the function of an acid, and a pre-bake process is subsequently conducted, thereby forming a resist film. The resist film is then exposed with a KrF excimer laser by using a desired mask. Through this exposure, an acid is generated from the acid generator included in the resist film. Since sulfonic acid produced from trimethylsilyl methylsulfonate weakens the function as a base of a nitrogen atom having a lone pair, the acid generated from the acid generator is not deactivated at the bottom of the resist film. As a result, a resist pattern with a satisfactory shape free from footing can be formed.

Abstract: A removing agent composition for a photoresist comprising 0.01 to 20% by weight of a quaternary ammonium hydroxide, 1 to 80% by weight of a nucleophilic amine having an oxidation-reduction potential, 0.5 to 20% by weight of a sugar and/or a sugar alcohol, and water in the remaining amount; and a process for producing a semiconductor integrated circuit comprising removing a photoresist applied onto an inorganic substrate by using the above removing agent composition.A layer of a photoresist applied onto an inorganic substrate, a layer of a photoresist remaining after dry etching of an inorganic substrate which is masked by the layer, or residues of a layer of a photoresist remaining after dry etching of an inorganic substrate which is masked by the layer and subsequent ashing of the layer can easily be removed at a low temperature in a short time. The wiring material of the circuit is not corroded at all, and ultra-fine working can be performed.

Abstract: The present invention is directed to a process for device fabrication and resist materials that are used in the process. The resist material contains a polymer that is the polymerization product of a monomer that contains alicyclic moieties and at least one other monomer. The polymer is formed by free radical polymerization, and the resulting polymer either has alicyclic moieties incorporated into the polymer backbone or pendant to the polymer backbone via saturated hydrocarbon linkages. Other monomers are selected for polymerization with the alicyclic moiety-containing monomer on the basis of the ability of the monomer to copolymerize by free radical polymerization.

Abstract: Either a chemical amplification positive electron beam resist film or a chemical amplification negative electron beam resist film is used selectively according to an IC fabricating process when forming a minute IC pattern by using, as a mask, a resist pattern formed by irradiating the chemical amplification electron beam resist film formed on a semiconductor wafer with an electron beam, to form the minute IC pattern quickly in a high accuracy and to carry out an electron beam direct writing at a high throughput. The chemical amplification electron beam resist film is coated with a conductive polymer film before irradiating the same with the electron beam to prevent the charging-up of the chemical amplification electron beam resist film and to stabilize the chemical amplification electron beam resist film during a electron beam writing process.

Abstract: A method for manufacturing a build-up multi-layer printed circuit board is disclosed which is used in the mother board of a computer, camera-incorporated VTRs, MCMs (multi chip module), CSPs (chip size package) or portable phones. In the build-up multi-layer printed circuit board of the present invention, an inner-layer connecting state is improved. The multi-layer printed circuit board is manufactured by sequentially stacking insulating resin layers and circuit conductor layers based on a build-up method. That is, a first insulating resin layer is necessarily made to undergo an exposure and a development so as to form a first via hole 122. Then a second via hole 124 which is larger than the first via hole 122 is formed on a second insulating resin layer, thereby forming a final V shaped photo via hole 120. Thus build-up multi-layer printed circuit board is manufactured.