Abstract: A method is provided to produce thin film transistors (TFTs) on polycrystalline films having a single predominant crystal orientation. A layer of amorphous silicon is deposited over a substrate to a thickness suitable for producing a desired crystal orientation. Lateral-seeded excimer laser annealing (LS-ELA) is used to crystallize the amorphous silicon to form a film with a preferred crystal orientation. The crystallized film is then polished to a desired thickness. A gate is formed overlying the polycrystalline film. The polycrystalline film is doped to produce source and drain regions.

Abstract: A method and apparatus for heat-treating a semiconductor substrate to heat different areas of the substrate at different temperatures. The method includes using an apparatus having a chamber of a refractory material; a support plate located at a lower side in the chamber for supporting the semiconductor substrate; a heating device disposed at an upper side in the chamber; and, a heat resistance mask provided between the support plate and fabricated to have different heat transmission rates therein.