Abstract: The disclosed technology generally relates to quartz crystal devices and more particularly to quartz crystal devices configured to vibrate in torsional mode. In one aspect, a quartz crystal device configured for temperature sensing comprises a fork-shaped quartz crystal comprising a pair of elongate tines laterally extending from a base region in a horizontal lengthwise direction of the fork-shaped quartz crystal. Each of the tines has formed on one or both of opposing sides thereof a vertically protruding line structure laterally elongated in the horizontal lengthwise direction. The quartz crystal device further comprises a first electrode and a second electrode formed on the one or both of the opposing sides of each of the tines and configured such that, when an electrical bias is applied between the first and second electrodes, the fork-shaped quartz crystal vibrates in a torsional mode in which each of the tines twists about a respective axis extending in the horizontal lengthwise direction.

Abstract: Acoustic resonator devices are disclosed. An acoustic resonator device includes a plurality of cells electrically connected in parallel. Each cell includes an interdigital transducer (IDT) on a piezoelectric plate, the IDT having at least 15 and not more than 35 interleaved fingers.

Abstract: A tuning fork-type vibration piece is provided, in which a cushioning portion is formed on the base of a package and allowed to contact parts for contact of arm portions which are any parts but their edges, and the parts for contact of the arm portions that contact the cushioning portion are electrodeless regions, which prevents the risk of frequency fluctuations caused by any electrode being chipped off by contact with the cushioning portion.

Abstract: A vibrating element includes a base and a first vibrating arm and a second vibrating arm extending from the base. The first vibrating arm includes a first arm and a first weight. The second vibrating arm includes a second arm and a second weight. In the vibrating element, 0.952<M2/M1<1.000, wherein M1 is mass on the second vibrating arm side of the first weight with respect to a first center line of the first arm and mass on the first vibrating arm side of the second weight with respect to a second center line of the second arm and M2 is mass on a side opposite to the second vibrating arm of the first weight with respect to the first center line and mass on a side opposite to the first vibrating arm of the second weight with respect to the second center line.

Abstract: A Fin Bulk Acoustic Resonator (FinBAR) includes a fin integrally fabricated on a substrate of a glass or a semiconductor, an inner electrode deposited on the fin, a piezoelectric layer disposed on the inner electrode, an outer electrode deposited on the piezoelectric layer, a first electrode and a second electrode formed on the top surface of the substrate and connected to the inner and outer electrodes respectfully. The fin is characterized with a larger height than its width. A FinBAR array including a number of the FinBARs with different fin widths sequentially located on one chip is capable of continuously filtering frequencies in UHF and SHF bands.

Abstract: The smart window for the smart home and smart grid can harvest energy and supply power to the home, grid and window itself. The smart window for the smart home and smart grid has all the Electrochromic panel, Solar panel and Multimedia panel been the same full window wide view and aligned with each other in IGU. To be a home automation system, the smart window has local/remote access/control capabilities. There are several types of smart windows working as master device or slave device. The operation of smart window automation system has three modes, normal/open mode, shut/tint mode and smart phone mode. The tube of air circulation system is hidden inside the frame surrounding IGU. Most of the electronic components are integrated to be FPSOC Field Programmable System On Chip that all the electronic component is hidden in the frame surrounding IGU, too. Therefore, the smart window doesn't have any blockage of window view with the Solar panel, Electrochromic panel, Multimedia panel and air circulation system.

Abstract: An acoustic wave device includes a piezoelectric substrate a reverse-velocity surface of which is convex, an interdigital transducer electrode disposed on the piezoelectric substrate, and mass addition films stacked above the interdigital transducer electrode. The interdigital transducer electrode includes a central region, first and second edge regions, first and second gap regions located outside the first and second edge regions, first and second inner busbar regions, and first and second outer busbar regions. The mass addition films are stacked in at least the first and second edge regions and the first and second inner busbar regions.

Abstract: A thin-film bulk acoustic resonator (FBAR) apparatus includes a lower dielectric layer including a first cavity; an upper dielectric layer including a second cavity, wherein the upper dielectric layer is on the lower dielectric layer; and an acoustic resonance film that is positioned between and separating the first and the second cavities. The acoustic resonance film includes a lower electrode layer, an upper electrode layer, and a piezoelectric film that is sandwiched between the lower and upper electrode layers. A plan view of the first and the second cavities overlap to form an overlapped region having a polygonal shape without parallel sides.

Abstract: A bulk-acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially covering the lower electrode; and an upper electrode at least partially covering the piezoelectric layer. On a surface of the bulk-acoustic wave resonator, a centroid of an active area in which the lower electrode, the piezoelectric layer, and the upper electrode all overlap each other is aligned with a center of a rectangle defining an aspect ratio of the active area. The active area has a shape of a polygon symmetrical with respect to at least one axis passing through the center of the rectangle defining the aspect ratio. The aspect ratio is greater than or equal to 2 and less than or equal to 10.

Abstract: A high Q acoustic BAW resonator with high coupling and improved spurious mode suppression is given. The BAW resonator comprises an active resonator region (AR) formed by an overlap of the three layers bottom electrode (BE), piezoelectric layer (PL) and top electrode layer (TE). An inner-flap (IF) is formed by a dielectric 3D structure sitting on a marginal region (MR) of the active resonator region (AR) or adjacent thereto, extending inwardly towards the center thereof and having a section that runs in parallel and distant to the top surface of the resonator keeping an inner gap (IG) thereto or an angle ?.

Abstract: The bandgap-less apparatus is a fast settling circuit (e.g., with settling time of less than 40 ns) that can leverage proportional-to-absolute-temperature only (PTAT-only) currents to generate a zero or substantially zero temperature coefficient, or even complementary-to-absolute-temperature (CTAT), reference current or voltage, without the need of a native CTAT component or bandgap diodes. The apparatus subtracts two different PTAT currents so that the resulting current is zero-TC. The resulting current is a reference current. The resulting current can be converted to a reference voltage.

Abstract: A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.

Abstract: A dual-output microelectromechanical system (MEMS) resonator can be operated selectively and concurrently in an in-plane mode of vibration and an out-of-plane mode of vibration to obtain, respectively, a first electrical signal having a first frequency and a second electrical signal having a second frequency that is less than the first frequency. The first and second electrical signals are mixed to obtain a third electrical signal having a third frequency, where the third frequency is proportional to a temperature of the MEMS resonator. The temperature is determined based on the third frequency. Values of the first and second frequencies can be adjusted based on the determined temperature to compensate for frequency deviations due to temperature deviations. Also described herein are methods and systems for determining the temperature of the dual-output MEMS and for performing frequency compensation, as well as a method of manufacturing the dual-output MEMS.

Abstract: Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.

Abstract: An enabling system that includes a controller and processing circuitry, is configured to enable an external oscillator that operates in one of single-ended, differential, and crystal modes. To enable the external oscillator, the controller is configured to detect a mode of operation of the external oscillator, and the processing circuitry is configured to operate in the detected mode. The controller detects the mode of operation of the external oscillator by sequentially initializing the processing circuitry to operate in the single-ended, differential, and crystal modes, and determining whether the current operating mode of the processing circuitry is same as the mode of operation of the external oscillator based on a clock signal outputted by the processing circuitry during the corresponding mode.

Abstract: A thin-film bulk acoustic resonator, a semiconductor apparatus including the acoustic resonator and its manufacturing method are presented. The thin-film bulk acoustic resonator includes a lower dielectric layer, a first cavity inside the lower dielectric layer, an upper dielectric layer, a second cavity inside the upper dielectric layer, and a piezoelectric film that is located between the first and second cavities and continuously separates these two cavities. The plan views of the first and the second cavities have an overlapped region, which is a polygon that does not have any parallel sides. The piezoelectric film of this inventive concept is a continuous film without any through-hole in it, therefore it can offer improved acoustic resonance performance.

Abstract: This application provides a wireless charger and a control method. The wireless charger includes a class-E power amplifier and a tunable impedance circuit that is connected to an output end of the class-E power amplifier. The class-E power amplifier includes a switching transistor and a tunable capacitance circuit that is parallelly connected to the switching transistor. The wireless charger further includes a control unit, configured to obtain a constraint condition of the class-E power amplifier; determine N1 target equivalent load impedances of the class-E power amplifier based on the constraint condition; and adjust a capacitance value of the tunable capacitance circuit in the class-E power amplifier, and adjust an impedance value of the tunable impedance circuit, to enable an equivalent load impedance of the class-E power amplifier to match one of the N1 target equivalent load impedances.

Abstract: A bulk-acoustic wave resonator may include: a substrate; a resonator unit including a first electrode disposed on the substrate, a piezoelectric layer disposed on the first electrode, and a second electrode disposed on the piezoelectric layer; and a protective layer disposed on a surface of the resonator unit. The protective layer is formed of a diamond film, and a grain size of the diamond film is 50 nm or more.

Abstract: An inductive switch comprises an inductor that has a primary metallic winding having a boundary configured in shape of a figure eight, such as in two loops, and a plurality of secondary metallic windings arranged within the boundary of the primary metallic winding. The inductive switch includes a plurality of switches, each switch arranged in series with a respective one of the plurality of secondary metallic windings. An equal number of the secondary windings is arranged within each loop. A tunable inductor comprises at least one main metallic loop and at least one secondary metallic loop, wherein the at least one secondary metallic loop comprises a switch that is arranged to configure the at least one secondary metallic loop into at least one shorted metallic loop or at least one closed metallic loop. The at least one shorted loop is floating.

Abstract: A microwave dielectric component (100) comprises a microwave dielectric substrate (101) and a metal layer, the metal layer being bonded to a surface of the microwave dielectric substrate (101). The metal layer comprises a conductive seed layer and a metal thickening layer (105). The conductive seed layer comprises an ion implantation layer (103) implanted into the surface of the microwave dielectric substrate (101) and a plasma deposition layer (104) adhered on the ion implantation layer (103). The metal thickening layer (105) is adhered on the plasma deposition layer (104). A manufacturing method of the microwave dielectric component (100) is further disclosed.