Abstract: An electric-arc evaporation method for coating surfaces, wherein at least two active consumption targets are used in the method, characterized in that the consumption targets are alternately connected as a cathode and an anode during the coating process.

Abstract: A method of making a metal or metal alloy target having the steps of providing a billet, the billet having a generally cylindrical configuration and having a central axis, cutting the billet in half parallel to the central axis to form at least a half cylindrical blank, and cross rolling the half cylindrical blank to form a target.

Abstract: A solid state electrochemical battery fabrication device and a method of creating the solid state electrochemical battery are provided. There is a first chamber comprising a first magnetron and a second chamber comprising a second magnetron, coupled to the first chamber. There is a third chamber comprising a vapor source for a polymer deposition, coupled to the second chamber. A Knudsen cell is coupled to the third chamber and configured to deposit lithium on a battery being fabricated. A linear hollow shaft connects the first, second, and third chambers, and provides a hermetic seal. A first telescopic arm having a housing is coupled to a first end of the hollow shaft and configured to extend out of its housing from the first chamber to the second chamber.

Abstract: A sputtering system and method are disclosed. The system includes a first power source that is configured to apply a first voltage at a first electrode that alternates between positive and negative relative to a second electrode during each of multiple cycles. A second power source is coupled to a third electrode and the second electrode, and the second power source is configured to apply a second voltage to the third electrode that alternates between positive and negative relative to the second electrode during each of the multiple cycles. A controller is configured to control the first power source and the second power source to phase-synchronize the first voltage with the second voltage, so both, the first voltage and the second voltage, are simultaneously negative during a portion of each cycle and simultaneously positive relative to the second electrode during another portion of each cycle.

Abstract: A single beam plasma or ion source apparatus is provided. Another aspect employs an ion source including multiple magnets and magnetic shunts arranged in a generally E cross-sectional shape. A further aspect of an ion source includes magnets and/or magnetic shunts which create a magnetic flux with a central dip or outward undulation located in an open space within a plasma source. In another aspect, an ion source includes a removeable cap attached to an anode body which surrounds the magnets. Yet a further aspect provides a single beam plasma source which generates ions simultaneously with target sputtering and at the same internal pressure.

Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis.

Abstract: An Inverted Cylindrical Magnetron (ICM) System and Methods of Use is disclosed herein generally comprising a co-axial central anode concentrically located within a first annular end anode and a second annular end anode; a process chamber including a top end and a bottom end in which the first annular end anode and the second annular end anode are coaxially disposed, whereby the first annular end anode, the second annular end anode, and the central anode form a 3-anode configuration to provide electric field uniformity, and the process chamber including a central annular space coupled to a tube insulator disposed about the central annular space wall; a cathode concentrically coupled to the tube insulator and a target; and a plurality of multi-zone electromagnets or hybrid electro-permanent magnets surrounding the exterior of the process chamber providing a tunable magnetic field.

Abstract: The present invention provides a technique to enable sufficient space saving in a transit-type vacuum processing device. The vacuum processing device 1 of the present invention has: a vacuum chamber 2 where a single vacuum ambience is formed; first and second processing regions 4 and 5 that are provided in the vacuum chamber 2 and have a processing source that performs processing on a planar process surface of a substrate 10; and a conveyance drive member 33 that forms a conveyance path for conveying the substrate 10 so as to pass through the first and second processing regions 4 and 5.

Abstract: A method of treating a substrate includes directing ions to the substrate along at least one non-zero angle with respect to a perpendicular to a substrate surface in a presence of a reactive ambient containing a reactive species where the substrate includes a surface feature. At least one surface of the surface feature is etched using the ions in combination with the reactive ambient at a first etch rate that is greater than a second etch rate when the ions are directed to the substrate without the reactive ambient and greater than a third etch rate when the reactive ambient is provided to the substrate without the ions.

Abstract: A ruthenium sputtering target, wherein a Si content is 10 to 100 wtppm, a total content of unavoidable impurities excluding gas components is 50 wtppm or less, and a remainder is Ru. By suppressing the crystal growth of ruthenium or a ruthenium alloy and reducing the generation of coarse crystal grains, arcing that occurs during sputtering is minimized, particle generation is reduced, and yield is improved.

Abstract: The purpose of the present invention is to provide a magnetic recording medium having a stacked structure of a seed layer including (Mg1-xTix)O and a magnetic recording layer including an L10 ordered alloy, and having improved properties. The method for producing a magnetic recording layer according to the present invention includes the steps of: (1) preparing a substrate; (2) forming a seed layer including (Mg1-xTix)O onto the substrate; (3) plasma etching the seed layer in an atmosphere including inert gas; and (4) forming a magnetic recording layer including an ordered alloy onto the seed layer which has been subjected to the step (3).

Abstract: A sputtering system and method are disclosed. The system includes first power source coupled to a first magnetron and an anode, and the first power source provides a first anode voltage that alternates between positive and negative during each of multiple cycles. The system also includes a second power source coupled to the second magnetron and the anode, and the second power source provides a second anode voltage that alternates between positive and negative during each of the multiple cycles. A controller of the system controls the first power source and the second power source to phase-synchronize the first anode voltage with the second anode voltage, so both, the first anode voltage and the second anode voltage, are simultaneously negative during a portion of each cycle and simultaneously positive relative to the first and second magnetrons during another portion of each cycle.

Abstract: A vacuum treatment apparatus includes a vacuum treatment recipient with a circular opening between an inside and exterior of the recipient. The recipient houses a turntable, which defines a plane (P) along its table surface, is drivingly rotatable around a central axis perpendicular to plane (P), and exhibits a plurality of circular substrates supports. The opening is arranged such that during a turn of the turntable the area of each of the substrate supports and the opening are fully aligned and completely face each other. The vacuum treatment apparatus also includes a PVD deposition source attached to the opening. The PVD source has a a circular material target and a static magnet arrangement. The magnet arrangement is arranged in a plane (M) in parallel to plane (P) and is not rotationally symmetric around a central axis running centrally through the magnet arrangement and being perpendicular to the plane (M).

Abstract: A chamber component for a processing chamber is disclosed herein. In one embodiment, a chamber component for a processing chamber has a base component body. The base component body has an exterior surface configured to face a processing environment of the processing chamber. A textured skin is conformable to the exterior surface. The textured skin has a first side configured to be disposed against the exterior surface and a second side facing away from the first side. The second side has a plurality of engineered features configured to enhance adhesion of material deposited on the textured skin during use of the processing chamber.

Abstract: A PVD chamber deposits a film with high thickness uniformity. The PVD chamber includes a coil of an electromagnetic that, when energized with direct current power, can modify plasma in an edge portion of the processing region of the PVD chamber. The coil is disposed within the vacuum-containing portion of the PVD chamber and outside a processing region of the PVD chamber.

Abstract: Methods and apparatus for detecting a shutter disk assembly in a process chamber using a number of sensors. A first, second, and third sensor in a shutter housing for a shutter disk assembly provide indications of a status of the shutter disk assembly. The indications are used in part to determine the operational status of the shutter disk assembly along with process information from a process controller. The operational status is then used to alter a process of the process chamber when necessary.

Abstract: A connection piece for a tubular target which has a cylindrical inner surface and a cylindrical outer surface and at least one magnetic insert. The position of the magnetic insert is adjustable along the axial direction of the connection piece on at least an inner surface or outer surface of the connection piece.

Abstract: Sputtering systems and methods are provided. In an embodiment, a sputtering system includes a chamber configured to receive a substrate, a sputtering target positioned within the chamber, and an electromagnet array over the sputtering target. The electromagnet array includes a plurality of electromagnets.

Abstract: An arc evaporation device includes a bar-shaped target having a front end surface and a side surface to be melted and evaporated from the front end surface by arc discharge; an arc power supply; a target feed unit which moves the target axially and in a feed direction; an ignition rod capable of contact with the side surface of the target, in an intersecting direction intersecting the feed direction; a rotary actuator which moves the ignition rod along the intersecting direction from a retraction position apart from the side surface in the intersecting direction to make the ignition rod enter a transport region into which the target is fed; and a detection unit which detects whether or not the ignition rod has come into contact with the side surface of the target during movement of the ignition rod.

Abstract: A method to filter macro particles in a cathodic arc physical vapor deposition (PVD) in vacuum is described, said method comprising the step of evaporating a material from a solid source by means of application of the arc on the source, forming a plasma comprising electrons, micro particles (vapor) and ions of evaporated material, together with macro particles larger in size than the micro particles and ions. The arc is moved on the source at a speed (superficial speed) at which the electrons, the micro particles and the ions of material evaporated at a second point deviate, from a path towards a substrate to be coated facing the source, the macro particles formed at a first point previously passed over by the arc, so as to self-clean the plasma of the macro particles and allow condensation of only the cleaned plasma on the substrate.