Abstract: A pellicle for lithography is provided that includes a pellicle frame provided with one or more atmospheric pressure adjustment holes having an inner peripheral face with a shape that opens out in going toward the inside of the pellicle frame. There is also provided a process for producing the pellicle for lithography, the process comprising a step of forming the pellicle for lithography and a step of spray-coating a pressure-sensitive adhesive composition from inside the pellicle frame.

Abstract: A blank mask includes a substrate, a multilayer reflection layer disposed over the substrate, a capping layer disposed over the multilayer reflection layer, a self-assembled monolayer disposed over the capping layer, a buffer layer disposed over the self-assembled monolayer, and an absorption layer disposed over the buffer layer.

Abstract: A pellicle frame, including aluminum, aluminum oxide, and a transition metal.

Abstract: A method of improving damascene wire uniformity without reducing performance. The method includes simultaneously forming a multiplicity of damascene wires and a multiplicity of metal dummy shapes in a dielectric layer of a wiring level of an integrated circuit chip, the metal dummy shapes being dispersed between damascene wires of the multiplicity of damascene wires; and removing or modifying those metal dummy shapes of the multiplicity of metal dummy shapes within exclusion regions around selected damascene wires of the multiplicity of damascene wires. Also a method of fabricating a photomask and a photomask for use in improving damascene wire uniformity without reducing performance.

Abstract: A lithographic pellicle comprises a pellicle film (1), a pellicle frame (3), and a PSA layer (4). The pellicle film (1) is stretched across and mounted to the pellicle frame (3) at its top end. The PSA layer (4) is disposed on the bottom end of the frame (3) and is capable of attaching the frame (3) to a substrate (5). An inner PSA layer (8) made of a curable composition comprising a perfluoro compound having a perfluoro structure backbone is disposed on the inner wall of the frame (3).

Abstract: A phase-shifting photomask with a self aligned undercut rim-shifting element and methods for its manufacture are provided. One embodiment of the invention provides a method of manufacturing a phase-shifting photomask having a self aligned rim-shifting element, the method comprising: applying a patterning film to a first portion of a transparent substrate; etching the substrate to a depth to remove a second portion of the substrate not beneath the patterning film; etching the first portion of the substrate to undercut an area beneath the patterning film; and removing the patterning film, wherein the etched substrate forms a self-aligned undercut rim-shifting element.

Abstract: A method of generating photomask data for fabricating a microlens array, the photomask having a microlens pattern including light-shielding portions and non-light-shielding portions, a rectangular region including a surrounding region having four sides of the rectangular region as outer edges and a primary region having boundaries that are inner edges of the surrounding region, the surrounding region being configured by four strip regions each including one of the four sides as its part, and a width between each outer edge and each corresponding inner edge being not more than 1/2 of a wavelength of exposure light. The method includes determining a layout of light-shielding portions and non-light-shielding portions in the surrounding region so that a density of light-shielding portions is set to fall within a range from 0% to 15%.

Abstract: A mask blank for producing a transfer mask adapted to ArF excimer laser exposure light. The mask blank has a light-shielding film on a transparent substrate. The light-shielding film has a structure in which a light-shielding layer and a front-surface antireflection layer are laminated in this order from the transparent substrate. The light-shielding layer is made of a material containing tantalum and nitrogen. The front-surface antireflection layer is made of material containing tantalum and silicon and further containing one or more elements selected from oxygen and nitrogen.

Abstract: A shadow mask for patterning a substrate during a semiconductor process. In one implementation, a method for performing a Physical vapor deposition (PVD) on a substrate is provided. The method includes placing a substrate on a susceptor disposed below one or more PVD guns and below a plasma shield assembly having an aperture piece comprising a bellows and a shadow mask coupled to a bottom side of the bellows, the aperture piece detachably coupled to the plasma shield assembly, wherein a region defined between sides of the bellows is smaller than a width of the substrate. The method includes lowering the bellows toward the substrate to place the shadow mask in contact with the substrate and depositing a material on an isolated region on the substrate through the shadow mask.

Abstract: An extreme ultraviolet (EUV) mask includes a quartz substrate including an absorption region and a reflection region, first and second multi-layered thin films formed on the quartz substrate, and a structure pattern disposed between the first and second multi-layered thin films.

Abstract: A halftone mask includes shielding parts partially formed on a transparent substrate; a lower portion halftone transmission pattern partially formed between the shielding parts on the transparent substrate; and an upper potion halftone transmission pattern partially formed on the lower portion halftone transmission layer pattern, where the lower portion halftone transmission pattern is partially exposed in a gap between the shielding parts and the upper portion halftone transmission pattern.

Abstract: A photomask blank has a light-shielding film composed of at least two layers on a transparent substrate. The light-shielding film includes a light-shielding layer made of a material mainly containing tantalum nitride and containing less than 62 at % nitrogen. The material is capable of being dry-etched with a chlorine-based gas containing no oxygen. The light-shielding film further includes a front-surface antireflection layer formed on the light-shielding layer and made of a material not capable of being dry-etched with a chlorine-based gas, but capable of being dry-etched with a fluorine-based gas.

Abstract: A method of manufacturing a mask blank includes a thin film forming step of forming a thin film, which becomes a mask pattern, on a mask blank substrate and a resist film forming step of forming a resist film on the thin film. The method further includes a step of storing resist film forming information including information about a date of formation of the resist film on the thin film, a step of correlating the resist film forming information with the mask blank, a step of identifying, based on the resist film forming information, the mask blank having the resist film whose sensitivity change exceeds an allowable range, a step of stripping the resist film formed in the identified mask blank, and a step of forming again a resist film on the thin film stripped of the resist film.

Abstract: Provided is a photomask used in fabrication of a semiconductor device. The photomask includes first and second regions to be transferred onto a semiconductor substrate having a step difference. The first and second regions have mask patterns. The mask patterns of the first region have a different shape from the mask patterns of the second region. The mask patterns of the second region have concave and convex portions disposed in opposite lateral portions thereof.

Abstract: A method of fabricating a line pattern extending in a first direction in a photoresist layer on a wafer by forming the photoresist layer on the wafer and implementing exposure on the wafer formed with the photoresist layer by using a photomask having a main pattern provided with a plurality of unit patterns slanted by a predetermined angle relative to the first direction and arranged along the first direction.

Abstract: In one embodiment, a flare correction method is disclosed. The method can acquire a flare point spread function. The method can calculate a pattern density distribution in a first region of the mask, the distance from the pattern being equal to or shorter than a predetermined value in the first region. The method can calculate pattern coverage in a second region of the mask, the distance from the pattern being longer than the predetermined value. The method can calculate a first flare distribution with respect to the pattern by performing convolution integration between the flare point spread function corresponding to the first region and the pattern density distribution. The method can calculate a flare value corresponding to the second region by multiplying a value of integral of the flare point spread function corresponding to the second region by the pattern coverage. The method can calculate a second flare distribution by adding the flare value to the first flare distribution.

Abstract: Provided is a method of correcting a defect in an extreme ultraviolet (EUV) mask. A monomolecular film is chemically bonded onto a surface of a repair tip. The repair tip is positioned over a defect disposed on the EUV mask, so that the monomolecular film bonded onto the repair tip can also bond to the defect. The repair tip is then moved away from the EUV mask so that the defect is separated from the EUV mask and thus removing the defect in the EUV mask.

Abstract: A method for producing a low-conductivity layer on at least one workpiece by vacuum coating is provided. The method includes operating an electrical arc discharge between an anode and a cathode of an arc source in an atmosphere containing a reactive gas. A small external magnetic field is generated to be essentially perpendicular to a target surface of a target, which is electrically connected to the cathode, to assist an evaporation process. A degree of recoating of the target surface by other coating sources in a vacuum coating installation is less than 10%, and the magnetic field is generated by a magnet system with an axially-polarized coil having a geometry similar in size to that of the target. Excitation current for the electrical arc discharge is supplied through the axially-polarized coil.

Abstract: The present disclosure relates to a replaced photomask including a substrate and a plurality of etched patterns. The plurality of etched patterns are formed on the substrate according to a photomask layout which has a plurality of photomask layout patterns categorized into a plurality of first groups. Each of the first groups includes a plurality of identical initial layout patterns, and each of the first groups is reproduced from an initial layout having a plurality of initial layout patterns categorized into a plurality of second groups to which the plurality of first groups respectively correspond, wherein the plurality of photomask layout patterns respectively correspond to the plurality of initial layout patterns and at least one of the plurality of the photomask layout patterns is replaced by a standardized photomask layout pattern.

Abstract: A photomask blank has a light-shielding film composed of at least two layers on a transparent substrate. The light-shielding film includes a light-shielding layer made of a material mainly containing tantalum nitride and further containing xenon and a front-surface antireflection layer formed on the light-shielding layer and made of a material mainly containing tantalum oxide and further containing argon.