Abstract: JFET and MESFET structures, and processes of making same, for low voltage, high current and high frequency applications. The structures may be used in normally-on (e.g., depletion mode) or normally-off modes. The structures include an oxide layer positioned under the gate region which effectively reduces the junction capacitance (gate to drain) of the structure. For normally off modes, the structures reduce gate current at Vg in forward bias. In one embodiment, a silicide is positioned in part of the gate to reduce gate resistance. The structures are also characterized in that they have a thin gate due to the dipping of the spacer oxide, which can be below 1000 angstroms and this results in fast switching speeds for high frequency applications.

Abstract: A liquid crystal display (LCD) device having non-white and white light emitting diodes and a liquid crystal display. A spectrum converting material is positioned between non-white LEDs and the LCD to convert the non-white light from the LEDs toward a white light spectrum. The liquid crystal display may include a plurality of light emitting diodes, a light pipe, and a spectrum converting material. The spectrum converting material may be a phosphorized material located between the plurality of non-white light emitting diodes and the light pipe. A light extracting surface may be located near a first surface of the light pipe, a diffuser located near a second side of the light pipe, where the first and second sides are opposite sides of the light pipe, a reflective polarizer, and an liquid crystal display. The light from the light pipe may passes through the diffuser, the reflective polarizer, before backlighting the liquid crystal display. The non-white LEDs may include blue LED, ultraviolet LEDs, and the like.