Abstract: Systems and techniques for depositing organic material on a substrate are provided, in which one or more shield gas flows prevents contamination of the substrate by the chamber ambient. Thus, multiple layers of the same or different materials may be deposited in a single deposition chamber, without the need for movement between different deposition chambers, and with reduced chance of cross-contamination between layers.

Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C.

Abstract: A vaporization supply apparatus 1 includes a preheating section 2 for preheating a liquid raw material L, a vaporization section 3 provided on top of the preheating section 2 for heating and vaporizing the preheated liquid raw material L sent from the preheating section 2, a flow rate control device 4 provided on top of the vaporization section 3 for controlling the flow rate of a gas G sent from the vaporization section 3, and heaters 5 for heating the preheating section 2, the vaporization section 3 and the flow rate control device 4.

Abstract: An apparatus and a method for processing one or more substrates in a batch process according to the principles of atomic layer deposition (ALD) includes a reaction chamber, a chamber plate for closing the reaction chamber, a motor arranged to move the chamber plate between an open position, in which the reaction chamber is open, and a closed position, in which the reaction chamber is closed, and an actuator arm mechanism connected to said motor. The actuator arm mechanism having three or more actuator arms having a distal end, which is connected to the chamber plate, the distal ends of the three or more actuator arms define a plane on the chamber plate.

Abstract: A method of depositing a film over a substrate covered with at least an insulating film provided with a groove is provided. In the method, a deposition process for depositing the film is performed by supplying at least a raw material gas to the substrate. The raw material gas is supplied while changing an amount of the raw material gas supplied per unit time.

Abstract: The present disclosure is generally directed to a solid source precursor delivery system. More specifically, the present disclosure is directed to a solid source precursor vessel that can be utilized to vaporize a supply of solid precursor stored within the vessel. The disclosed source vessel utilizes a plurality of individual cavities or pockets within the interior of the vessel. Each individual pocket may be loaded with precursor. In an arrangement, the pockets may be loaded with pre-formed blocks of compressed precursor material that typically have a higher density than was previously achieved when packing solid precursor within a source vessel. The increased density of the solid precursor material increases a capacity of the source vessel resulting in longer intervals between replacement and/or refilling the source vessel.

Abstract: A method for preparing a microstructure on the surface of glass by titanium oxide nanoparticle-assisted infrared nanosecond laser, including the following steps: (1) dropwise applying a titanium oxide nanoparticle hydrogel onto the surface of a glass sample; (2) pressing another piece of glass on the surface of the hydrogel, so the hydrogel is evenly distributed between the two pieces of glass, and allowing the two pieces of glass to stand horizontally for a period of time to air-dry the hydrogel; (3) separating the two pieces of glass to obtain a glass with a uniform titanium oxide nanoparticle coating; (4) forming a microstructure using an infrared nanosecond laser with a wavelength of 1064 nm; and (5) performing after-treatment, including ultrasonically cleaning the sample with acetone, absolute ethanol and deionized water respectively for 10 min to remove titanium oxide nanoparticles attached to the surface, to obtain a glass sample with the microstructure.

Abstract: Process assemblies and cable management assemblies for managing cables in tight envelopes. A processing assembly includes a top chamber having at least one substrate support, a support shaft, a robot spindle assembly, a stator and a cable management system. The cable management system includes an inner trough assembly and an outer trough assembly configured to move relative to one another, and a plurality of chain links configured to house at least one cable for delivering power to the process assembly.

Abstract: Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

Abstract: The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.

Abstract: The disclosed technology generally relates to semiconductor structures and their fabrication, and more particularly to diffusion barrier structures containing Ti, Si, N and methods of forming same. A method of forming an electrically conductive diffusion barrier comprises providing a substrate in a reaction chamber and forming a titanium silicide (TiSi) region on the substrate by alternatingly exposing the substrate to a titanium-containing precursor and a first silicon-containing precursor. The method additionally comprises forming a titanium silicon nitride (TiSiN) region on the TiSi region by alternatingly exposing the substrate to a titanium-containing precursor, a nitrogen-containing precursor and a second silicon-containing precursor. The method can optionally include, prior to forming the TiSi region, forming a titanium nitride (TiN) region by alternatingly exposing the substrate to a titanium-containing precursor and a nitrogen-containing precursor.

Abstract: A pressurization type method for manufacturing elementary metal may include a metal precursor gas pressurization dosing operation of, in a state where an outlet of a chamber having a substrate is closed, increasing a pressure in the chamber by providing a metal precursor gas consisting of metal precursors, thereby adsorbing the metal precursors onto the substrate, a main purging operation of purging a gas after the metal precursor gas pressurization dosing operation, a reaction gas dosing operation of providing a reaction gas to reduce the metal precursors adsorbed on the substrate to elementary metal, after the main purging operation, and a main purging operation of purging a gas after the reaction gas dosing operation.

Abstract: A process for manufacturing a ceramic powder with binder includes at least one additional element or compound, the ceramic powder with binder being in particular based on zirconia and/or alumina and/or strontium aluminate, wherein the process includes a step (E3) of depositing at least one additional element or compound on a ceramic powder with binder by a physical vapour deposition (PVD) and/or by a chemical vapour deposition (CVD) and/or by an atomic layer deposition (ALD).

Abstract: A thin film deposition apparatus used to produce large substrates on a mass scale and improve manufacturing yield. The thin film deposition apparatus includes a deposition source; a first nozzle disposed at a side of the deposition source and including a plurality of first slits arranged in a first direction; a second nozzle disposed opposite to the first nozzle and including a plurality of second slits arranged in the first direction; and a barrier wall assembly including a plurality of barrier walls arranged in the first direction so as to partition a space between the first nozzle and the second nozzle.

Abstract: A fluid handling structure for a gas phase deposition apparatus, the structure defining a flow path with an inlet and an outlet for transmitting pressurized fluid from said inlet to the outlet, wherein the structure includes an elongated slit and a series of nozzles through which pressurized fluid is allowed to enter the elongated slit, the inlet being upstream the series of nozzles, and wherein the outlet is formed downstream at a gap opening of the elongated slit allowing pressurized fluid to discharge from the elongated slit towards a substrate, wherein the series of nozzles are configured to provide a larger flow resistance than the elongated slit, and wherein the series of nozzles are adapted to form a series of jet flows directed towards one or more impingement surfaces of the structure when pressurized fluid is transmitted through the flow path.

Abstract: An additive manufacturing device and method for delivering a flowable material from a nozzle of a programmable computer numeric control (CNC) machine, and compressing the flowable material with a compression roller. In one embodiment, the device includes a nozzle configured to deposit a flowable material on a surface; and a roller configured to compress the deposited flowable material, wherein the roller comprises: a flat center portion having a constant diameter; and opposed end portions, wherein each end portion extends outwardly from the flat center portion, and wherein a radially outermost surface of each end portion is angled relative a rotational axis of the roller.

Abstract: A film deposition apparatus includes a rotary table disposed in a vacuum chamber; multiple stages on each of which a substrate is placeable, the stages being arranged along a circumferential direction of the rotary table; a process area configured to supply a process gas toward an upper surface of the rotary table; a heat treatment area that is disposed apart from the process area in the circumferential direction of the rotary table and configured to heat-treat the substrate at a temperature higher than a temperature used in the process area; and a cooling area that is disposed apart from the heat treatment area in the circumferential direction of the rotary table and configured to cool the substrate.

Abstract: A spray boom includes a body having a length defined a first end and a second end thereof. The body is formed by a plurality of layers of composite material adapted to be molded together to form an inner surface and an outer surface. A hollow cavity is defined in the body internally of the inner surface, and a channel is formed in the body between the inner surface and the outer surface. The channel extends along the length and is defined between the first end and the second end.

Abstract: The method for manufacturing a ceramic component, in particular component containing zirconia and/or alumina, for a timepiece or a jewelry piece, is characterised in that it includes a step (E3) of depositing at least one additional element or compound on a ceramic powder, optionally bound, by atomic layer deposition (ALD).

Abstract: Disclosed are methods and systems for providing silicon carbide films. A layer of silicon carbide can be provided under process conditions that employ one or more silicon-containing precursors that have one or more silicon-hydrogen bonds and/or silicon-silicon bonds. The silicon-containing precursors may also have one or more silicon-oxygen bonds and/or silicon-carbon bonds. One or more radical species in a substantially low energy state can react with the silicon-containing precursors to form the silicon carbide film. The one or more radical species can be formed in a remote plasma source.