Abstract: A film forming apparatus and method of the present invention include a substrate holding section for holding a plurality of substrates in a plane within a chamber, first and second process gas discharge sections provided opposite to the substrate holding section to discharge first and second process gases, a rotation mechanism for rotating the substrate holder, and a heater for heating the substrates. While the substrates are rotating as the substrate holding section rotates, the substrate holding section, first and second mono atomic layers are alternately stacked on the corresponding substrates. A compound film is therefore formed through a reaction involved under heating.