Abstract: Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.

Abstract: A cleaning method for an EUV light generation apparatus may include closing a connection portion so that a chamber interior and the interior of an exposure apparatus do not communicate when EUV light is not being generated, supplying an etchant gas for etching debris that has accumulated on a reflective surface of an optical element to the chamber interior in a state where the connection portion is closed, and exhausting the chamber interior using an exhaust apparatus while supplying the etchant gas.

Abstract: The present invention relates to a household appliance (1) that can be changed to a mode other than the operating or stand-by modes when desired, but eliminating the possibility of changing to this mode unintentionally by the user.

Abstract: A method of controlling the operation of an automatic dishwasher having at least one cycle of operation and a sensor that indicates a degree of turbidity of liquid in the dishwasher includes repeatedly determining a correction value for the sensor related to the scaling of the sensor and executing a de-scaling cycle of operation based thereon.

Abstract: A household appliance having a treating chamber in which is received an article for treatment, a treating chemistry dispenser configured to receive a unit dose container for the treating chemistry, and a controller for executing at least one cycle of operation and a method of operating the household appliance to physically alter a unit dose container in conjunction with a at least one cycle of operation and sensing same.

Abstract: In one embodiment, a method for cleaning a showerhead electrode my include sealing a showerhead electrode within a cleaning assembly such that a first cleaning volume is formed on a first side of the showerhead electrode and a second cleaning volume is formed on a second side of the showerhead electrode. An acidic solution can be loaded into the first cleaning volume on the first side of the showerhead electrode. The first cleaning volume on the first side of the showerhead electrode can be pressurized such that at least a portion of the acidic solution flows through one or more of the plurality of gas passages of the showerhead electrode. An amount of purified water can be propelled through the second cleaning volume on the second side of the showerhead electrode, and into contact with the second side of the showerhead electrode.

Abstract: A method of cleaning and a system and method of determining the effectiveness of a cleaning process for an HVAC system including a heat exchanger having a coil matrix. The coil matrix includes a plurality of rows of heat exchanging coils in which each adjacent row of coils is offset. The plurality of rows define channels extending through the coil matrix between an upstream side and a downstream side. The heat exchanger cleaning method includes applying a cleaning solution and a wet steam mixture directed into the channels. The effectiveness of the cleaning method is determine by a system and method which measures various operating parameters at the inlet side and outlet side of the heat exchanger both before and after the cleaning process. The system and method calculate a SEER rating using the total amount of heat removed by the HVAC system and the total power usage of the HVAC system.

Abstract: Provided is a method for generating active species in a treatment liquid used in a surface treatment system, the surface treatment system comprising a processing chamber and a treatment liquid delivery system, the treatment liquid delivery system having a mixing zone and an active species generation zone. A substrate and a treatment liquid comprising one or more chemical solutions and/or one or more process gases are provided. Sonic energy is applied to the treatment liquid in a mixing zone and/or an active species generation zone using one or more sonic devices. One or more selected surface treatment operating variables are controlled to optimize generation of active species in the treatment liquid. The one or more selected surface treatment operating variables are adjusted in order to meet one or more surface treatment objectives.

Abstract: A system for cleaning gas turbine engines is described. More specifically, methods and apparatuses for cleaning stationary gas turbines and on-wing turbofan engines found on aircraft are disclosed that includes a trailer-mounted, automated low-pressure water delivery system, additive and detergent injection system, nozzle and manifold technology, and active waste water effluent collector system. The system will deliver the liquid cleaning medium at a specific pressure, temperature and flow rate to optimize the atomization that occurs at the nozzles.

Abstract: A method includes providing a wafer and providing a first spray bar spaced a distance from the wafer. A first spray is dispensed from the first spray bar onto a first portion (e.g., half) of the wafer. Thereafter, the wafer is rotated. A second spray is dispensed from the first spray bar onto a second portion (e.g., half) of the rotated wafer. In embodiments, a plurality of spray bars are positioned above the wafer. One or more of the spray bars may be tunable in separation distance and/or angle of dispensing.

Abstract: Suppressed is damage of a semiconductor wafer due to charging of a cleaning liquid used in a single wafer type wafer cleaning step. A chemical solution discharged from a tip of a cleaning nozzle is brought into contact with protrusions of wafer chucks to thereby let static electricity of the chemical solution go to the wafer chucks, and subsequently, the cleaning nozzle is moved above the wafer to supply the chemical solution onto a top surface of the wafer, thereby suppressing abnormal discharge (damage) of the wafer due to charging of the chemical solution.

Abstract: A device for recovering magnetic particles trapped on a magnetic plug, which includes a supporting end and a magnetized element for retaining the magnetic particles in a liquid resulting from the wear of parts with which the liquid has been in contact, the recovery device including a magnetization device and an enclosure having an opening, the enclosure to receive the magnetic plug via the opening such that the magnetized element is located inside the enclosure and the supporting end is located outside the enclosure. The opening is sized such that the supporting end blocks the opening. The device also includes an injection nozzle to inject a gaseous fluid inside the enclosure, the nozzle being oriented such that the flow of gaseous fluid expels the magnetic particles retained on the magnetized element toward the bottom of the enclosure. The magnetization device traps the particles urged toward the bottom of the enclosure.

Abstract: The method for eliminating metallic lithium on a support comprises a plasma application step. The plasma is formed from a carbon source and an oxygen source with a power comprised between 50 and 400 W. It transforms the metallic lithium into lithium carbonate. The method then comprises a dissolution step of the lithium carbonate in an aqueous solution.

Abstract: Provided are a liquid processing apparatus and a liquid processing method that can optimize the state of air flow at an upper side of a substrate according to each liquid process performed during a substrate liquid processing. A liquid processing apparatus for performing a substrate liquid processing includes a support member configured to horizontally supporting the substrate; a gap forming member configured to form an annular gap between the gap forming member and an outer circumferential part of the support member; an upper liquid supplying member configured to supply a processing liquid to the substrate from an upper side; a cup configured to surround the annular gap and receive the processing liquid swept away from the rotating substrate through the annular gap; and an elevating mechanism configured to elevate the gap forming member.

Abstract: A substrate cleaning system including a carrying unit having a plurality of rollers for carrying a substrate, wherein each of the rollers includes a roller shaft and a plurality of division rollers coupled to the roller shaft, and wherein a gap between adjacent ones of the roller shafts is larger than a radius of each of the division rollers; a first rinse unit located along the carrying unit and configured to apply a first cleaning liquid onto the substrate; and a cleaning unit comprising a slit nozzle and configured to apply a second cleaning liquid to the substrate after it encounters the first rinse unit.

Abstract: Provided is a cleaning processing device that is for a biological implant and that is capable of quickly eliminating ozone generated by ultraviolet-ray radiation after completion of ultraviolet-ray radiation towards the biological implant. The cleaning processing device for a biological implant performs cleaning processing of the biological implant by means of radiating ultraviolet rays at the surface of the biological implant and by causing ozone to contact the surface of the biological implant, and the cleaning processing device is characterized by being provided with a housing, an ultraviolet-ray radiating lamp that is disposed within the housing and that radiates ultraviolet rays at the biological implant, an ozone-removing filter disposed within the housing, and a fan that introduces the ambient gas within the housing to the ozone-removing filter, and is further characterized by the fan being driven in response to the end of cleaning processing of the biological implant.

Abstract: Disclosed is a liquid processing method which includes holding the substrate by a holding part, rotating the substrate held by the holding part through a rotation driving part, and supplying a chemical liquid to a holding part-side surface of the substrate by a chemical liquid supply part. After the supply of the chemical liquid, rinsing liquid droplets are generated and supplied between the holding part and the substrate by supplying gas toward the holding part-side surface of the substrate from a gas supply part and, at the same time, supplying a rinsing liquid toward the holding part-side surface of the substrate from a rinsing liquid supply part. After the supply of the rinsing liquid droplets, the gas supply is halted and a rinsing liquid is additionally supplied to the holding part-side surface of the substrate from the rinsing liquid supply part.

Abstract: A recyclable fluid cleaning system wafers includes a cleaning vessel configured to clean semiconductor wafers immersed in a bath of persulfuric acid cleaning solution, the cleaning solution circulated through a primary process tool fluid path; a secondary fluid path that diverts a portion of the persulfuric acid cleaning solution for electrolysis treatment thereof; an electrolysis reactor within the secondary fluid path that receives oxidant depleted sulfuric acid, the electrolysis reactor having electrodes that, when activated causes sulfate ions in the solution to be oxidized and form persulfate ions that are recombined with fluid from the primary fluid path and fed back to the cleaning vessel; and one or more controller devices in operative communication with the cleaning vessel and with the electrolysis reactor.

Abstract: A cleaning apparatus includes a first substrate-holding portion configured to hold a first area of a back surface of the substrate so that the top surface is kept face up; a second substrate-holding portion configured to hold a second area of the back surface of the substrate, the second area being not overlapped with the first area, and rotate the substrate; a top-surface cleaning nozzle configured to supply a top surface cleaning fluid to a top surface of the substrate; a bevel cleaning nozzle configured to supply a bevel cleaning fluid to a bevel portion of the substrate; a cleaning fluid supplying portion configured to supply a back surface cleaning fluid to the back surface of the substrate held by the first or the second substrate-holding portion; and a cleaning member configured to clean the back surface of the substrate held by the first or the second-substrate holding portion.

Abstract: Disclosed is a dishwasher, which prevents a washing cycle from being carried out in an insufficient state of washing water caused by the continuous discharge of the washing water due to a siphon action, and a method of controlling the dishwasher. The method includes draining washing water from the dishwasher; supplying the washing water to the inside of the dishwasher; and temporarily stopping the supply of the washing water for a designated time between the drain of the washing water and the supply of the washing water.