Abstract: The present invention is generally directed to a novel process for the production of nanowires and nanobelts and the novel nanostructures which can be produced according to the disclosed processes. The process can be carried out at ambient pressure and includes locating a metal in a reaction chamber, heating the chamber to a temperature at which the metal becomes molten, and flowing a vapor-phase reactant through the chamber. The vapor-phase reactant and the molten metal can react through a thermal CVD process, and nanostructures can form on the surface of the molten metal. Dimensions of the nanostructures can be controlled by reaction temperature.

Abstract: A method for depositing a thin film includes the steps of providing a vapor including at least one selected vapor phase component into an evacuated chamber and condensing the vapor onto a heated substrate to form a liquid phase deposit wherein a temperature of the substrate is lower than the condensation temperature of the component. The liquid deposit is then cooled to produce a solid phase film. The invention can provide two or more vapor phase components. The invention can be used to deposit a wide variety of layers, including thin films of metallic, semiconductor and nonmetallic inorganic materials. The invention is useful for forming solid electrolytes and the electrodes for batteries, fuel cells and other electromagnetically active devices.

Abstract: The present invention relates to oxides on suitable substrates, as converted from nitride precursors.

Abstract: A method of controllably aligning carbon nanotubes to a template structure to fabricate a variety of carbon nanotube containing structures and devices having desired characteristics is provided. The method allows simultaneous, selective growth of both vertically and horizontally controllably aligned nanotubes on the template structure but not on a substrate in a single process step.

Abstract: A new method is proposed for the production of plane-parallel platelets, comprising the steps a) vapor-deposition, at a pressure below atmospheric pressure, of a separating agent onto a carrier to produce a separating agent layer, b) vapor-deposition, at a pressure below atmospheric pressure, of at least one product layer onto the separating agent layer, c) dissolution of the separating agent layer in a solvent and production of a suspension in which the at least one product layer is present in the form of plane-parallel platelets, in which method the separating agent is selected from the group consisting of anthracene, anthraquinone, acetamidophenol, acetylsalicylic acid, camphoric anhydride, benzimidazole, benzene-1,2,4-tricarboxylic acid, biphenyl-2,2-dicarboxylic acid, bis(4-hydroxyphenyl)-sulfone, dihydroxyanthraquinone, hydantoin, 3-hydroxybenzoic acid, 8-hydroxyquinoline-5-sulfonic acid monohydrate, 4-hydroxycoumarin, 7-hydroxycoumarin, 3-hydroxynaphthalene-2-carboxylic acid, isophthalic acid, 4,4-meth