Abstract: Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:P.gtoreq.5.times.10.sup.-4,P.ltoreq.10.sup.-1 .times.10.sup.-E/45(A)and the relationship between the ion energy E (ev) and the plasma density D (/cm.sup.3) satisfies the formula B given below:D.gtoreq.2.times.10.sup.11 .times.10.sup.-E/45, 10.ltoreq.

Abstract: A multi-layer structure, typically semiconductor device, is etched according to a process of the present invention, and meets the above-described existing needs by focusing on the post-etch treatment of the damaged, etched semiconductor device formed thereby. This post-etch treatment is accomplished by exposing the damaged silicon to a forming-gas downstream plasma which results in substantially increased oxide regrowth and significantly higher level of gate oxide quality. In conducting the process of the subject invention from about 1% up to about 15% by volume of H.sub.2, and from about 85 up to about 99% by volume of N.sub.2 are preferably employed as the post etching forming-gas plasma.

Abstract: According to this invention, there is provided a method of forming a groove wiring layer, including the steps of forming a metal oxide film, consisting of a metal oxide having a decrease in standard free energy smaller than a decrease in standard free energy of a hydrogen oxide or of a carbon oxide, on an insulating film formed on a semiconductor substrate, and reducing the metal oxide film to form an electrode-wiring layer consisting of a metal which is a main component constituting the metal oxide. In this manner, an electrode-wiring layer having high EM and SM resistances without causing an increase in electric resistivity caused by an impurity or the like can be obtained.

Abstract: A semiconductor device having a high productivity, a low resistance ohmic electrode, a high integration density, a low deterioration of a characteristic of each component and a high yield is provided. The ohmic contact of the semiconductor device has a structure of an AuGe/Ni alloy layer (27), a WSi layer (18c) and an Au layer (17d) sequentially laminated on a GaAs substrate (1). The flatness of the electrode is maintained by the WSi layer (18c) and the reduction of a resistance of the electrode is attained by the Au layer (17d ).

Abstract: A Schottky diode circuit 20 is formed on a semiconductor layer 24. A conductive contact 36 on the surface of the semiconductor layer 24 forms a Schottky barrier 40 at the junction of the conductive contact 36 and the semiconductor layer 24. A guard ring 26 in the semiconductor layer 24 is adjacent to the Schottky barrier 40 and is separated from the conductive contact 36 by a portion of the semiconductor layer 24. No direct electrical path exists between the guard ring 26 and the conductive contact 36.

Abstract: In a method of modifying a transparent conductive oxide film and in a method of manufacturing a photovoltaic device, a transparent conductive oxide film is irradiated with an energy beam for increasing the carrier concentration and thereby reducing the resistance of the transparent conductive oxide film.

Abstract: A method for forming a direct wafer bonded structure having a buried high temperature metal nitride layer (16) and improved thermal conductivity is provided. By patterning the high temperature metal nitride layer (16) with a non-oxidizing photoresist stripper and absent a photoresist hardening step, adhesion between the high temperature metal nitride layer (16) and a dielectric layer (17, 27) subsequently formed over the high temperature metal nitride layer (16) is significantly improved. The dielectric layer (17, 27) will adhere to the high temperature metal nitride layer (16) in high temperature environments. In addition, a direct wafer bonded structure having a buried high temperature metal nitride layer (16) and improved thermal conductivity is provided. The structure is suitable for power, logic, and high frequency integrated circuit devices.

Abstract: A two-step hydrolysis-condensation method was developed to form metal oxide aerogels of any density, including densities of less than 0.003g/cm.sup.3 and greater than 0.27g/cm.sup.3. High purity metal alkoxide is reacted with water, alcohol solvent, and an additive to form a partially condensed metal intermediate. All solvent and reaction-generated alcohol is removed, and the intermediate is diluted with a nonalcoholic solvent. The intermediate can be stored for future use to make aerogels of any density. The aerogels are formed by reacting the intermediate with water, nonalcoholic solvent, and a catalyst, and extracting the nonalcoholic solvent directly. The resulting monolithic aerogels are hydrophobic and stable under atmospheric conditions, and exhibit good optical transparency, high clarity, and homogeneity. The aerogels have high thermal insulation capacity, high porosity, mechanical strength and stability, and require shorter gelation times than aerogels formed by conventional methods.

Abstract: A method for selectively etching a semiconductor wafer in the presence of an electrochemical etchant wherein the electrical potential of the area that is selectively etched is automatically changed to a potential at which the etching is inhibited once the desired etching in the area is completed. The method is described with respect to making an electrode tip for a tunnel current sensing device.

Abstract: A silicon-nitride beta-phase material including a non-densified structure of beta silicon nitride crystals having appreciable strength without any significant amount of liquid forming agents is made by comminuting a slurry including a mixture of silicon powder and water to form non-oxidized surfaces on the silicon powder and to allow chemical reaction between the silicon and the water, reducing the water content of the reacted slurry to a degree sufficient to form a resultant dry mass, nitriding the dry mass by exposure to a nitriding gas including at least nitrogen to form a mass of alpha-phase silicon nitride, and converting the resultant silicon nitride mass at a conversion temperature of from about 1450.degree. C. to about 2100.degree. C. to convert the silicon nitride from an alpha-phase material to a non-densified beta phase silicon nitride material.

Abstract: Void-free planarization of sub-micron and deep sub-micron semiconductor devices results from depositing a layer of silicon-enriched oxide over a conventionally fabricated device and its metal traces. Conventional layers of TEOS-based oxide and SOG are then applied over the layer of silicon-enriched oxide. The silicon-enriched oxide has an index of refraction of at least about 1.50, a dangling bond density of about 10.sup.17 /cm.sup.3, and is typically about 1,000 .ANG. to 2,000 .ANG. thick. Because it is relatively deficient in oxygen atoms, the silicon-enriched oxide releases relatively few oxygen atoms when exposed by the etching process and does not greatly accelerate the SOG etch rate. Further, the silicon-enriched oxide itself has an etch rate that is only about 75% that of stoichiometric TEOS-based oxide. As such, the silicon-enriched oxide acts as a buffer that slows the etch-back process as the etching approaches the level of the metal traces, thus protecting the metal traces against exposure.

Abstract: Uniquely dispersible precipitated silica particulates, e.g., beads, powders and granulates/extrudates, very well suited for the reinforcement of elastomer/rubber matrices, e.g., tires for the automotive industry, have characteristic particle sizes, BET and CTAB specific surface areas, DOP oil absorption values, total pore volumes and pore size distributions, and reduced degree of attrition.

Abstract: A silicon wafer containing oxygen precipitate nucleation centers (or oxygen precipitates) and having a first face, a second face, and a central plane equidistant between the first and second faces. The nucleation centers (or oxygen precipitates) have a non-uniform distribution between the first and second faces with a maximum density of the nucleation centers (or oxygen precipitates) being in a region which is between the first face and the central plane and nearer to the first face than the central plane. The density of the nucleation centers (or oxygen precipitates) increases from the first face to the region of maximum density and decreasing from the region of maximum density to the central plane.

Abstract: The invention relates to talc substances consisting of particles having a sheet structure. These substances are characterised in that each particle has internally the crystalline structure of talc which confers upon it certain specific properties of this mineral (softness, thermal stability) and has hydrophilic surface properties unlike the hydrophobic properties of mineral talc which give rise to useful reactivity. The substances according to the invention have a thermal and chemical stability range similar to that of talc. They can be manufactured by thermal or chemical means under conditions designed to avoid internal conversion of the talc and to effect the surface modifications consisting of replacing inert siloxane bridges by active hydrophilic groups.

Abstract: The present disclosure relates to improved processes for treating acid gases to remove acid gas components therefrom. Processes in accordance with the present invention include preparing a calcium silicate hydrate sorbent in the form of a semi-dry, free-flowing powder, and treating the gas with the powdery sorbent, such as by injecting the sorbent into a stream of the gas. The powdery sorbents may be prepared by slurrying/drying or pressure hydration techniques. Examples disclosed herein demonstrate the utility of these processes in achieving improved acid gas-absorbing capabilities in both lab-scale and pilot plant studies. Additionally, disclosure is provided which illustrates preferred plant design configurations for employing the present processes using conventional dry sorbent injection equipment. Retrofit application to existing plants is also addressed.

Abstract: A method for forming a tungsten plug for wiring metal comprises the steps of: forming a first Ti film and a TiN film on the entire surface of an insulating film at respective thickness, in due order, the insulating film having been etched to form a contact hole therein; forming a TiSi.sub.2 film over the TiN film; forming a blanket tungsten film over the TiSi film; applying etch back to the tungsten film, to form a tungsten plug in the contact hole, the TiSi.sub.2 film being partially covered with tungsten residues and partially exposed; and etching the TiSi.sub.2 film with a solution having different chemical etching powers to the TiSi.sub.2 film and the TiN film, the tungsten residues being removed as the TiSi.sub.2 film is etched. The method is capable of completely removing the tungsten residues which are formed when the blanket tungsten film is subjected to etch back to form the plug for metal wiring and thus, capable of preventing the damage of the plug tungsten and the TiN film.

Abstract: Novel precipitated silica particulates having low water uptake and high BET and CTAB surfaces, well adapted as reinforcing fillers for, e.g., the silicones, are conveniently prepared by heat treating certain starting material precipitated silica particulates at a temperature of at least 700.degree. C., for at least one minute.

Abstract: In a fluidized bed process for chlorinating rirnium-containing material, an improvement is disclosed comprising utilizing in the process calcined petroleum shot coke, calcined petroleum fluid coke or mixtures thereof. The improved process is capable of (a) decreasing the amount of fine particulate coke that is entrained in the hot gases exiting the fluidized bed reactor, and (b) more completely reacting the coke.

Abstract: A method of forming a device and the device itself that utilizes a high density plasma-enhanced TEOS-based intermetal dielectric is disclosed. The high density is accomplished though the use of higher RF power and higher oxygen flow rate so that the TEOS is more completely oxidized. The higher density intermetal dielectric absorbs water from air slower than a standard intermetal dielectric film. This lower water absorbance reduces the amount of water in the device and reduces hot electron induced device degradation.

Abstract: A wafer(s) for producing semiconductor devices is subjected to heat treatment in a vertical thermal reactor, which is provided with an electric heating means setting a first temperature and another electric heating means setting a second temperature higher than the first temperature. The wafer(s) is moved upwards and is subected to a treatment in the second region of the vertical thermal reactor; and, is reverted to the first region. Rapid thermal processing of 6 or 8 inch wafer(s) is possbile without causing slip lines.