Abstract: A non-volatile data storage device comprises pairs of immediately adjacent and isolated-from-one-another local bit lines that are independently driven by respective and vertically oriented bit line selector devices. The isolation between the immediately adjacent and isolated-from-one-another local bit lines also isolates from one another respective memory cells of the non-volatile data storage device such that leakage currents cannot flow from memory cells connected to a first of the immediately adjacent and isolated-from-one-another local bit lines to memory cells connected to the second of the pair of immediately adjacent and isolated-from-one-another local bit lines. A method programming a desire one of the memory cells includes applying boosting voltages to word lines adjacent to the bit line of the desired memory cell while not applying boosting voltages to word lines adjacent to the other bit line of the pair.

Abstract: A memory system performs a first sensing operation to sense whether multi-level cells assume an on-cell state or an off-cell state in response to a first read voltage applied to a selected word line. It then supplies a pre-charge voltage to bit lines corresponding to multi-level cells that have been sensed as assuming the off-cell state in response to the first read voltage, and it performs a second sensing operation with the supplied pre-charge voltage to sense whether each of the multi-level cells that have been sensed as assuming the off-cell state assumes an on-cell state or an off-cell state in response to a second read voltage applied to the selected word line.

Abstract: An output circuit includes first and second output drivers. The first output driver is configured to transfer a first data signal directly to an output pad in synchronization with a clock signal. The second output driver is configured to transfer a second data signal directly to the output pad in synchronization with an inversion clock signal. The clock signal and the inversion clock enable multiplexing of the first data signal and the second data signal to provide a multiplexed output data signal.

Abstract: A non-volatile variable resistive element according to an embodiment comprises a first electrode including a first metal, a second electrode including a second metal, a third electrode placed opposite to the first and second electrodes, and a variable resistive layer placed between the first and second electrodes and the third electrode, a resistance of the variable resistive layer reducing when at least either one of the first metal and the second metal is diffused into the variable resistive layer and the resistance of the variable resistive layer rising when at least either one of the first metal and the second metal diffused into the variable resistive layer is collected by the first electrode or the second electrode.

Abstract: A non-volatile memory device includes a sensing mode selector configured to select a sensing mode according to environment information. A page buffer senses a data state of a memory cell in one of a plurality of sensing methods, depending upon the selected sensing mode. Memory device operations include high speed program operations, high speed verify operations, high reliability accurate program operations, and high reliability accurate verify operations.

Abstract: The present invention is a means and method for constructing and operating a 3-D array and, more particularly, a 3-D memory array. This array can be manufactured as a monolithic integrated circuit at low cost by virtue of the limited number of steps per layer of memory elements. The low number of steps results by having the storage elements separated by a resistive component as opposed to an active component. The 3-D array is in essence, an array of 2-D resistive arrays (row-planes) having a long dimension (typically along the rows) and a short dimension (typically in the direction of the stacked layers). Any one row-plane can be isolated from the rest and be accessed independently from all of the other row-planes in the 3-D array. This makes it possible to operate and analyze a single row-plane as a mostly stand-alone circuit. The present invention lends itself to single bit accesses as well as simultaneous multiple bit accesses.

Abstract: Provided is a semiconductor integrated circuit including a plurality of memory chips stacked therein. Each of the memory chips may include: a pumping enable signal control unit suitable for generating a pumping enable signal in response to a power-up signal or a trigger signal received from a first adjacent memory chip, delaying the pumping enable signal by a given time, and outputting the delayed pumping enable signal to a second adjacent memory chip; and a pumping unit suitable for generating a pumping voltage by performing a pumping operation in response to the pumping enable signal.

Abstract: A first semiconductor device equalizes levels of a bit line and a complementary bit line of a high-order bit line pair in a first memory block using a first drive voltage signal whose level is controlled when a power-down mode or a self-refresh mode is activated according to a level combination of high-order command/address signals. A second semiconductor device equalizes levels of a bit line and a complementary bit line of a low-order bit line pair in a second memory block using a second drive voltage signal whose level is controlled when the power-down mode or the self-refresh mode is activated according to a level combination of low-order command/address signals.

Abstract: Memory apparatuses and methods for low power current mode sense amplification are disclosed. An example memory apparatus may include a current mode sense amplifier and a current circuit. The current mode sense amplifier may be configured to provide an output current. The current circuit may comprise a bias generator that is configured to generate a bias signal as well as a current control circuit coupled to both the current mode sense amplifier and the bias generator. The current control circuit may be configured to receive both the output current and the bias signal and control the output current based, at least in part, on the bias signal.

Abstract: A semiconductor device includes: a plurality of memory cells; a plurality of local bit lines connected to respective memory cells of the plurality of memory cells; and a first amplifier. The first amplifier receives read data from each local bit line of the plurality of local bit lines and determines a transition speed of an output level of the first amplifier in response to receiving a combination of at least two pieces of read data. The first amplifier transfers, based on the determined transition speed, multivalued data of the read data to a read global bit line.

Abstract: Methods and apparatus for generating a reference for use with a magnetic tunnel junction are provided. In an example, provided is a magnetoresistive read only memory including a magnetic tunnel junction (MTJ) storage element, a sense amplifier having a first input coupled to the MTJ storage element, and a reference resistance device coupled to a second input of the sense amplifier. The reference resistance device includes a plurality of groups of at least two reference MTJ devices. Each reference MTJ device in a respective group is coupled in parallel with each other reference MTJ device in the respective group. Each group is coupled in series with the other groups. This arrangement advantageously mitigates read disturbances and reference level variations, while saving power, reducing reference resistance device area, and increasing read speed.

Abstract: A nonvolatile memory device comprises a memory cell comprising a variable resistance element connected between a couple of wirings and a control circuit applying a voltage between the couple of wirings connected to the memory cell. In data rewriting, the control circuit repeats a first voltage application step of applying a first write voltage between the couple of wirings and a first verify step of applying a first voltage lower than the first write voltage between the couple of wirings and comparing a cell current through the cell with a first threshold current, the steps repeated until a magnitude relation of the cell current and the first threshold current satisfies a first condition. If the first condition is satisfied, the circuit performs a second voltage application step of applying a second write voltage between the couple of wirings.

Abstract: An integrated circuit is provided, which comprises at least one first group each having at least one analog unit; and at least one second group each having at least one electronically settable semi-permanent switching unit coupled to the at least analog unit of the first group for trimming the first group and having at least one many-times-programmable and non-volatile cell (MTP). Each many-times-programmable cell (MTP) comprises at least one MOS transistor having a floating gate (FG) with a tunnel oxide (TO) and a first capacitor coupled to the floating gate (FG). The capacitance of the first capacitor is substantially larger than a gate-channel capacitance of the MOS transistor.

Abstract: A sense amplifier circuit includes first and second lines and first and second inverters. Each inverter includes an input terminal, an output terminal, and a power source terminal. A second signal line potential is supplied to the first inverter input terminal. The second inverter input terminal is connected to the first inverter input terminal. A first signal line potential is supplied to the second inverter input terminal. A first switch transistor is connected to the first inverter power source terminal and has a gate connected to the second signal line. A switch second transistor is connected to the second inverter power source terminal and has a gate connected to the first signal line.

Abstract: A memory module may include m memory devices. Each of the m memory devices may be divided into n regions each region including a plurality of rows corresponding to row addresses, where m and n are integers equal to or greater than 2. An address detector included in each of the m memory devices, wherein for each of the address detectors, the address detector may be configured to count a number of accesses to a particular row address included in one region of each of the m memory devices during a predetermined time period, and be configured to output a detect signal when the number of the counted accesses reaches a reference value. Each of the max-count address generators may be configured to count a number of accesses for a set of row addresses different from the sets of row addresses for which the other max-count address generators count accesses.

Abstract: An erase process for a 3D stacked memory device allows a portion of a block of memory cells to be erased. In one approach, in a U-shaped NAND string configuration, memory cells in the drain- or source-side columns are erased. In another approach, such as in a U-shaped or a straight NAND string configuration, memory cells in a portion of a column of memory cells are erased, and a dummy memory cell is provided between the erased and non-erased memory cells. A dummy memory cell can be on either side (e.g., above and below) of an erase memory cell, or on either side of a non-erased memory cell. A dummy memory cell is ineligible to store user data, but prevents a downshift in the threshold voltage of an erased memory cell from changing the threshold voltage of a non-erased memory cell, due to capacitive coupling.

Abstract: A data writing method, a memory storage device, and a memory control circuit unit are provided. The method includes: writing data into at least one first logical unit and at least one second logical unit, and the data includes first data and second data; storing first data into at least one first physical erasing unit and filling the first physical erasing unit with the first data; storing second data into at least one second physical erasing unit; determining whether a remaining space of each second physical erasing unit is less than a threshold; if the remaining space of one of the at least one second physical erasing unit is less than the threshold, selecting at least one fourth physical erasing unit from a spare area and writing the second data into the at least one second physical erasing unit and the at least one fourth physical erasing unit.

Abstract: A bi-synchronous electronic device may include a FIFO memory circuit, and a first digital circuit coupled to the FIFO memory circuit and configured to operate based upon a first clock signal, and write to the FIFO memory circuit based upon a write pointer. The bi-synchronous electronic device may include second digital circuit coupled to the FIFO memory circuit and configured to operate based upon a second clock signal different from the first clock signal, and read from the FIFO memory circuit based upon a read pointer. The FIFO memory circuit may be configured to detect a jump in the write pointer to a new position, determine jump candidates for the read pointer from a current position, select a jump candidate, and synchronize the read pointer based upon the selected jump candidate.

Abstract: A driver for a semiconductor memory may reduce an error in writing data in memory cells by adjusting the height and width of a spike current, when the memory cells in which data having the same level are written are arranged at different distances. In addition, the driver may reduce the error by controlling the amount of charges supplied to each of the memory cells that are arranged at different distances.

Abstract: A programming technique for a set of resistance-switching memory cells such as ReRAM cell involves programming the low resistance cells to the high resistance state (in a reset process) early in a programming operation, before programming the high resistance cells to the low resistance state (in a set process), to minimize losses due to leakage currents. The reset process can be performed in one or more phases. In some cases, a current limit is imposed which limits the number of cells which can be reset at the same time. Initially, the cells which are to be reset and set are identified by comparing a logical value of their current resistance state to a logical value of write data. If there is a match, the cell is not programmed. If there is not a match, the cell is programmed.