Abstract: A single step electroplating process for interconnect via fill and metal line formation on a semiconductor substrate is disclosed. In this process, a barrier layer is formed onto a surface of a substrate that has at least one via and then a conductive layer is formed onto the barrier layer. Next, a photoresist layer is applied and patterned on top of the conductive layer. The via plugs and metal lines are then deposited on the substrate simultaneously using an electroplating process. After the electroplating process is completed, the photoresist and the conductive layer between the deposited metal lines are removed. The process provides a simple, economical and highly controllable means of forming metal interconnect systems while avoiding the difficulties associated with depositing and patterning metal by traditional semiconductor fabrication techniques.

Abstract: The winding drum of the cable-winding device is kept air-tight by an air-tight container. A lower elastic sealing member 1a is interposed between the air-tight container and the rotation table. The air-tight container, the lower elastic sealing member 1a, and the chamber are communicated with one another. The air-tight container and the chamber are filled with inert gases at less than atmospheric pressure. The rotation table, the weight sensors, the drive motor, the gear are disposed in the atmosphere. An arm is vertically installed on the rotation table. An upper elastic sealing member 1b is interposed between the end portion of the arm and the air-tight container. The upper elastic sealing member is communicated the interior of the air-tight container through a through hole. The arm support the top portion of the upper elastic sealing member.