Abstract: An improved method for making an integrated circuit that includes forming a conductive layer on a substrate, then forming a dielectric layer comprising a polymer on the conductive layer. After forming the dielectric layer, a layer of photoresist is patterned to define a region to be etched. An etched region is then formed through the dielectric layer while simultaneously removing the layer of photoresist.

Abstract: A material of forming silicon oxide film comprising a polymer having a repeating unit represented by the following general formula (1A), (1B) or (1C); ##STR1## wherein R.sup.1 is a substituent group which can be eliminated at a temperature ranging from 250.degree. C. to the glass transition point of the material of forming silicon oxide film; and R.sup.2 is a substituent group which cannot be eliminated at a temperature of 250.degree. C. or more.

Abstract: The present invention provides a method of forming an undoped silicate glass layer on a semiconductor wafer by performing a high density plasma chemical vapor deposition process. The semiconductor wafer being positioned in a deposition chamber. The method comprises forming the undoped silicate glass layer by performing the high density plasma chemical vapor deposition process in the deposition chamber under the following conditions: an argon (Ar) flow rate of 40 to 70 sccm (standard cubic centimeter per minute); an oxygen (O.sub.2) flow rate of 90 to 120 sccm; a silane flow rate of 70 to 100 sccm; a gas pressure of 3 to 10 mtorr; a temperature of 300 to 400.degree. C.; and a low frequency power of 2500 to 3500 watts. Wherein the ratio of Ar to O.sub.2 is 0.53, and O.sub.2 to silane is 1.23.