Abstract: An electromagnetic radiation intensity comparator is disclosed for providing an indication of differences between electromagnetic radiation intensities occurring at different photodetectors.

Abstract: High density self-scanning photo-sensitive circuits employ a voltage transfer mode with charge amplification. The circuits include a field effect transistor and a capacitor coupled from the gate electrode of the transistor through a diode to the source electrode of the transistor. A photodiode is connected to the gate electrode of the transistor. Means are provided for precharging the capacitor to substantially the threshold voltage of the transistor while applying an additional constant voltage of predetermined magnitude to the gate electrode to operate the transistor in its linear region. An analog signal from the photo-diode is also applied to the gate electrode of the transistor which is amplified by the transistor with little or no threshold voltage loss.

Abstract: A switching circuit using first and second semiconductor devices each having a semiconductive substrate with a current path portion, first and second semiconductive regions forming a PN junction therebetween, the first region being capacitively coupled to the current path portion, a control electrode connected to the second region, a signal input terminal electrically connected to the first terminal of the first semiconductor device, an output terminal electrically connected to the second terminal of the first semiconductor device, means for connecting the control electrode of the first semiconductor device to the first terminal of the second semiconductor device, means for applying a bias voltage to the second terminal of the second semiconductor device, and switch means for selectively applying a bias voltage to the control electrode of said second semiconductor device. The switching circuit is operated with a signal applied to the control electrode of the second semiconductor device.

Abstract: The specification describes a circuit for transmitting a drive pulse from a source of pulses to a capacitive load, such as a word line or a bit line in a monolithic memory. A discharge path is provided for discharging the capacitive load, thereby preventing false selection of a word or bit line and improving the timing performance of the monolithic memory. The discharge path is shown in the form of a field effect transistor having a source to drain path from the output node to a second node dischargeable to ground potential and is gated by the source of pulses.

Abstract: A negative shunt feedback amplifier is disclosed for connection to the output node of a complex complementary metal oxide semiconductor logic circuit to increase the performance and reduce the FET device size. A CMOS inverter is coupled to the amplifier to restore the logic levels and to form the logic output. A first embodiment of the invention uses a resistor feedback and a second embodiment of the invention uses parallel N-channel and P-channel FETs to form the feedback impedance. The circuit has application in environments where a logic function requires a large number of FET devices resulting in a large output node capacitance and, thereby slowing the logic speed, as for example in a large DOT-OR circuit or at each output of a FET memory array.

Abstract: A negative shunt feedback amplifier is disclosed for connection to the output node of a complex complementary metal oxide semiconductor logic circuit to increase the performance and reduce the FET device size. A CMOS inverter is coupled to the amplifier to restore the logic levels and to form the logic output. A first embodiment of the invention uses a resistor feedback and a second embodiment of the invention uses parallel N-channel and P-channel FETs to form the feedback impedance. The circuit has application in environments where a logic function requires a large number of FET devices resulting in a large output node capacitance and, thereby slowing the logic speed, as for example in a large DOT-OR circuit or at each output of a FET memory array.

Abstract: A new and improved clock system is described which is effective to substantially increase speed of operation of logic circuits without the need for additional power. That system includes the use of two sets of like phased clock signals, one of which is applied to the internal circuitry and the other of which controls the input and output stages of the circuit. By apportioning the capacitive load on the clock generator, the slower switching input and output circuitry is provided with faster switching clock signals exhibiting increased usable clock time while the faster switching internal circuitry is provided with less usable clock time. As a result, the available clock power is used to maximum efficiency and circuit speed is increased to the limit of the switching capabilities of the internal circuitry.

Abstract: A balanced differential capacitively decoupled charge sensor for detecting small amounts of charge comprises balanced differential sensing means adapted to receive charge representing data and charge representing a reference value, a pair of capacitance decoupling transistors, the respective drains of each of said pair of capacitance decoupling transistors being electrically coupled to the respective inputs of said differential sensing means, a matched pair of charge output nodes electrically coupled to the respective sources of said capacitance decoupling transistors and adapted to receive, respectively, data charge and reference charge, and means for biasing and resetting both of said charge output nodes so that said capacitance decoupling transistors are functioning in a high transconductance mode when data charge and reference charge are received.

Abstract: According to the invention, the electrical charge which is transferred to a circuit node by the switching ON or OFF of a field effect transistor whose source or drain is connected to that node is cancelled by connecting the source and drain of another field effect transistor to that circuit node and applying to its gate terminal a complement of the switching signal applied to the gate electrode of the first field effect transistor.

Abstract: A uniquely arranged, clock-controlled integrated circuit is disclosed as a building block for implementing Boolean logic functions. The circuit has a minimum number of components and a design to yield a low cost, high speed operation. The circuit may also include an efficient signal inversion and amplification stage, where such is required.

Abstract: For driving a plurality of memory cells, a driver circuit, connected to the word driver line of the memory cells, includes a resistive connection, connected between the word line and ground potential, for preventing the potential of the word line from floating. The driver circuit includes an enhancement-type switching MOSFET and a depletion type resistor MOSFET connected in series. By virtue of the connection of a gate of the depletion type MOSFET, the depletion type MOSFET is always turned on so that whether or not the switching type enhancement MOSFET is turned on, the common connection between the switching MOSFET and the resistive MOSFET will always be at a prescribed potential thereby preventing the word driver line from floating.

Abstract: A first subset of semiconductor devices has an associated first additional device and a first gate output. A second subset of semiconductor devices has an associated second additional device and a second gate output. The first and second subsets are of one conductivity type while the first and second additional devices are of another conductivity type. First logic signals are applied to the first subset for turning on the first subset and the first additional device for producing at the first gate output a first function of the first logic signals. Second logic signals are applied to the second subset for turning on the second subset and the second additional device for producing at the second gate output a second function of the second logic signals.

Abstract: A novel sense amplifier circuit providing conversion of MOS input signals to TTL output signals with tri-state logic output at the output data bus, the input circuit of the sense amplifier providing current sensing and programmable input thresholds for economical construction and enhanced speed of operation of the sense amplifier. A novel tri-state operation is provided for the input section of the sense amplifier to provide either a clamped voltage at the input data bus line during MOS to TTL communication or a floating input when it is desired that MOS devices on the input data bus are to communicate.

Abstract: An edge sensitive set-reset flip-flop is implemented by providing a conventional cross-coupled coincident gate flip-flop with an input means consisting of an inverter, a noninverting delay element and a coincident gate. The input means buffers binary input signals such that the cross-coupled coincident flip-flop will change state only in response to binary transitions of a prescribed direction.

Abstract: In order to provide compensation for changes in the ambient temperature and supply voltage for an electronic circuit, such as a pulse generator circuit made up of MOSIC structure, a field effect transistor circuit includes a high value resistor and an enhancement and depletion type MOSFET, connected in parallel. The drain electrodes of the MOSFETs are connected to the power supply through the resistor and are also connected to the gate electrode of a depletion type load MOSFET which is the load transistor for an enhancement type MOSFET. When the compensating circuit is provided in a pulse generator circuit, instability in the oscillating frequency of the pulse generator due to changes in ambient temperature and supply voltage is overcome and the difference in the oscillating periods for the various MOSICs are decreased.

Abstract: A counter stage comprising a static inverter and first and second dynamic inverting means. Each inverting means includes an input, an output, and means for selectively rendering the inverting means operative. The output of the first inverting means is applied to the input of the static inverter, the output of the static inverter is applied to the input of the second inverting means and the output of the second inverting means is fed back to the input of the first inverting means. When one inverting means is rendered operative, the other inverting means is rendered inoperative.

Abstract: An asynchronously timed digital flip-flop circuit eliminates malfunction occurring when internal race conditions cause the flip-flop to lock up at the guasi-stable threshold state in which both input and output signals of the flip-flop are not at true logic levels but are equal to each other. The addition of special circuitry to reject these "false" outputs eliminates their propagation in the digital system in which said flip-flop is employed.

Abstract: An integrated circuit for the selective completion and interruption of a signal path comprises three transistors of the MOSFET type, i.e., a switching transistor in tandem with a decoupling transistor and a pilot transistor in cascade with the switching transistor. The channels of the switching and decoupling transistors lie in series between supply terminals of opposite potential, together with a load resistor. The channel of the pilot transistor is connected across the same supply terminals by way of a biasing resistor tied to the gate of the switching transistor. On/off voltages are applied to the gate of the pilot transistor while incoming signals are fed to the gate of the decoupling transistor.

Abstract: A trinary input circit for an MOSFET integrated circuit includes a biasing stage formed by using a standard inverter, whose output is connected to its input so as to establish a particular bias voltage level when the input to the trinary input circuit is left floating. The output of the biasing stage is applied to the inputs of a second inverter stage having a higher beta ratio than the bias stage and to the input of a third inverter stage having a lower beta ratio. The bias stage when left open circuited will seek a quiescent voltage which is above the switching threshold of the second stage and below the switching threshold of the third stage. Thus, as a result of the relative beta ratios of the three stages when the input to the bias stage is left open, the bias stage will seek a particular voltage level such that the high beta ratio stage produces a logic 0 output and the low beta ratio stage produces a logic 1 output.

Abstract: A field effect transistor amplifier comprising one or more depletion-type field effect transistors, preferably with triode characteristics, and having an operating voltage applied across its drain and source electrodes through a load, while an input signal to be amplified is applied to its gate electrode and a predetermined DC gate bias voltage is applied between the gate and source electrodes; is provided with a protective circuit for preventing damage to the field effect transistor by an excessive input signal that is, by over-drive, and which includes a source resistor connected in series with the source electrode and a constant voltage element, for example, constituted by one or more diodes, connected between the gate electrode and the side of the source resistor remote from the respective source electrode.