Abstract: An etching method includes loading, first and second supplying, removing and etching steps. In the loading step, a target object is loaded into a chamber. In the first supply step, a first gas containing carbon, hydrogen and fluorine is supplied into the chamber. In the modification step, plasma of the first gas is generated to modify a surface of a mask film and a surface of an organic film which is not covered with the mask film. In the second supply step, a second gas for etching the organic film is supplied into the chamber. In the removal step, a modified layer formed on the surface of the organic film is removed by applying a first high frequency bias power. In the etching step, the organic film below the modified layer is etched by applying a second high frequency bias power lower than the first high frequency bias power.

Abstract: A substrate treatment apparatus according to an embodiment includes a treatment part, a cyclic path, a heater, and a first injector. The treatment part is supplied with an etchant containing phosphoric acid and a silica deposition suppressor, and brings a substrate having a silicon nitride film on a surface thereof into contact with the etchant to remove the silicon nitride film from the substrate. The cyclic path circulates the etchant in the treatment part. The heater heats the etchant. The first injector is provided on the cyclic path, and injects the silica deposition suppressor into the etchant.

Abstract: In fin FET fabrication, side walls of a semiconductor fin formed on a substrate have certain roughness. Using such fins having roughness may induce variations in characteristics between transistors due to their shapes or the like. An object of the present invention is to provide a fin FET fabrication method capable of improving device characteristic by easily reducing the roughness of the side walls of fins after formation. In one embodiment of the present invention, side walls of a semiconductor fin are etched by an ion beam extracted from a grid to reduce the roughness of the side walls.

Abstract: The present disclosure relates to a solution for selectively removing metal, such as Ta or TaN, from a substrate, such as an aluminum containing substrate. The solution comprises an acid, such as HF or buffered HF, an ingredient comprising a fluorine ion, such as ammonium fluoride (NH4F), ethylene glycol, and water. A method of selectively removing metal from a substrate using this solution is also disclosed.

Abstract: The manufacturing of electronic components on individual substrates made of an insulating material includes molding, in a silicon wafer, an insulating material with a thickness corresponding to the final thickness desired for the substrates, manufacturing the electronic components, and removing the silicon from the rear surface of the wafer after manufacturing of the components.