Abstract: A single crystalline silicon carbide (.beta.-SiC) layer having a thickness greater than 1 .mu.m is grown on a silicon substrate by the following method of the present invention. The silicon substrate is provided in a reactor chamber, and the reactor chamber is evacuated and maintained at a reduced atmospheric pressure during the growing processes. While flowing a mixed gas containing acetylene into the reactor chamber, the substrate is heated up at a temperature range from 800.degree. to 1000.degree. C., preferable in a range from 810.degree. to 850.degree. C., whereby a buffer layer of carbonized silicon having a thickness of 60 to 100 .ANG. is grown on the substrate. Thereafter, the flowing gas is changed to a mixed gas containing hydrocarbon and chlorosilane, and the substrate temperature is raised to a temperature from 850.degree. to 950.degree. C. In this process, a single crystalline .beta.-SiC layer can be grown on the buffer layer, and a thickness of a few .mu.m for the grown .beta.