Abstract: In a method for interrogating at least one optical sensor coupled to an optical path, at least two time-shifted optical signals are fed into the optical path and reflected optical signals of the at least two probe signals created by the at least one optical sensor are detected. Each detected reflected optical signal is assigned to one of the at least one optical sensor and a correct optical frequency is assigned to each detected reflected optical signal. An absolute value or a value range or a change of a value or value range of the parameter to be sensed is determined from the one or more of the following physical conditions: the optical reflection signals, the reflectivity of the at least one optical sensor, and the frequency of each detected optical reflection signal, or from one or more dependencies that link these physical conditions.

Abstract: There is provided a pixel circuit including an optically sensitive material (OSM) layer and a readout circuit. The OSM layer is arranged upon the readout circuit, and used to sense light energy to generate signal charges to be integrated in a floating diffusion. The readout circuit includes a source follower for amplifying a voltage on the floating diffusion within a readout interval, and the voltage on the floating diffusion is not changed by an external voltage pulse within the readout interval.

Abstract: A system counts photon interactions in an array of photosensitive diodes and addresses the issue of improving position resolution. Every photo-detector diode of the array is connected to a readout unit cell containing a high-gain charge-to-voltage amplifier, a shaper, at least two comparators with independent thresholds and at least one interpixel communication logic, receiving as input signals from comparator outputs of the same readout unit cell and of the neighboring readout unit cells. This logic is then connected to at least one counter, each counter followed by a counter readout. By means of the digital interpixel communication logic and the set of comparators with different thresholds in every readout unit cell, it is possible to determine the photon hit position in the detector with a higher position resolution than the physical photo-detector size including the removal of the corner effect in pixel detectors.

Abstract: An integrated radiation sensor is disclosed. The integrated radiation sensor comprises a first optical filter associated with a first radiation-sensing element and a second optical filter associated with a second radiation-sensing element. The first optical filter is configured to pass radiation to the first radiation-sensing element with wavelengths within a UV-C range. The second optical filter is configured to pass radiation to the second radiation-sensing element with wavelengths longer than wavelengths within the UV-C range. Also disclosed is a method of manufacturing the integrated radiation sensor and methods of use of the integrated radiation sensor.

Abstract: A photoelectric conversion apparatus and the like that enables a predetermined determination in response to the incidence of photons is provided. The photoelectric conversion apparatus comprising a pixel provided with a photoelectric conversion unit that outputs a signal in response to the incidence of a photon; and a plurality of processing units configured to correspond to the pixel, wherein the processing unit has a first counter circuit configured to count an output signal from the pixel during a predetermined time period and a first memory configured to store a count value counted by the first counter circuit as a second count value, and wherein the processing unit outputs a determination result obtained by comparing a first count value output by the first counter circuit and a predetermined threshold that has been set based on the second count value read out from the first memory.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, multiple rings of isolation structures may be formed around the SPAD. An outer deep trench isolation structure may include a metal filler such as tungsten and may be configured to absorb light. The outer deep trench isolation structure therefore prevents crosstalk between adjacent SPADs. Additionally, one or more inner deep trench isolation structures may be included. The inner deep trench isolation structures may include a low-index filler to reflect light and keep incident light in the active area of the SPAD.

Abstract: One embodiment illustrated herein includes an optical device. The optical device includes a stacked device, formed in a single semiconductor chip, configured to be coupled in an overlapping fashion to an underlying device. The stacked device includes a plurality of optical output pixels. Each of the output pixels includes a plurality of subpixels. Each subpixel is configured to output a color of light. Each pixel is configured to output a plurality of colors of light. The optical device further includes one or more detectors, configured to detect light, interleaved with the subpixels of the pixels. The stacked device comprises a plurality of transparent regions formed in the stacked device between the pixels. The plurality of transparent regions are transparent, according to a first transmission efficiency, to light in a first spectrum. The underlying device emits light in the first spectrum.

Abstract: A system and method is disclosed for solar tracking and controlling an angular position of a photovoltaic power system. The solar tracking system includes an imaging device for capturing images of the sky; a solar position data generating module; and a control system comprising a neural network. The neural network has multiple convolutional layers to generate a first output associated with the images, and a solar position data module. A first dense layer module receives the solar position data and generates a second output. A second dense layer module receives the first output and the second output and generates a concatenated data sequence. A processor is programmed to generate a multi-planar irradiance signal (MPIS) in response to the concatenated data sequence, and determine an angular position of the PV power system and adjust the angular position in response to an angle of maximum irradiance.

Abstract: For easily setting, for each of a plurality of detection apparatuses, a target object detected by the detection apparatus, a model providing apparatus including: a storage unit storing a machine learning model detecting a plurality of detection target objects, based on a received signal of a reflected wave of an electromagnetic wave with a wavelength equal to or greater than 30 micrometers and equal to or less than 1 meter; a request reception unit receiving a request for a detection model detecting the detection target object, based on the received signal; a selection unit selecting at least one out of a plurality of detection target objects for each request; generation unit generating a detection model detecting a selected detection target object and not detecting an unselected detection target object, based on the machine learning model; and a transmission unit transmitting the generated detection model to a detection apparatus is provided.

Abstract: A superconducting nanowire single photon detector (SNSPD) device includes a substrate, a distributed Bragg reflector on the substrate, a seed layer of a metal nitride on the distributed Bragg reflector, and a superconductive wire on the seed layer. The distributed Bragg reflector includes a plurality of bi-layers, each bi-layer including lower layer of a first material and an upper layer of a second material having a higher index of refraction than the first material. The wire is a metal nitride different from the metal nitride of the seed material.

Abstract: An optical sensor and filter assembly is provided and includes an optical sensor, a filter and a mounting structure. The optical sensor includes a detector layer having first and second opposed faces and a read-out integrated circuit (ROIC) to which the first face of the detector layer is hybridized. The filter permits passage of one or more wavelength bands of interest of incident light toward the optical sensor and the mounting structure directly hybridizes the filter to the second face of the detector layer.

Abstract: One embodiment provides a pyranometer, including: a dome enclosing a cavity; at least one light emitting source arranged such that light exterior to the dome does not directly impinge on the at least one light emitting source; a diffusor; wherein the at least one light emitting source is configured to emit light substantially directed to a portion of the diffusor, and wherein the diffusor is configured to diffuse the light emitted from the at least one light emitting source on an inner surface of the dome; and one or more first light detecting sensors arranged in the cavity and configured to measure an intensity of the light reflected from the dome and impinging on the one or more first light detecting sensors. Other aspects are described and claimed.

Abstract: A device includes a conversion unit, a generation unit configured to generate a pulse signal based on a signal from the conversion unit, a counter circuit configured to count the generated pulse signal, and a time measurement circuit configured to measure a time wherein one of a count value counted by the counter circuit or a time measurement value measured by the time measurement circuit is selectively output.

Abstract: A photodetector including: a case including a light receiving surface provided on an upper surface and having a first region that transmits visible light and a second region that transmits less visible light than the first region; a printed circuit board provided to face the light receiving surface; and a plurality of electronic components provided on a light receiving surface side of the printed circuit board and including a first light receiving element configured to detect visible light. The first light receiving element is disposed at a first position of the printed circuit board exposed to the visible light transmitted through the first region. The number of mounted electronic components disposed at the first position is smaller than the number of mounted electronic components disposed at a second position of the printed circuit board other than the first position.

Abstract: A system includes a substrate. The system also includes a detector array disposed over the substrate, where the detector array includes multiple detector pixels. The system further includes multiple plasmonic gratings disposed over top surfaces of the detector pixels, where each plasmonic grating includes multiple convex polyhedrons separated by valleys. Each detector pixel may have a mesa shape, and the convex polyhedrons of the plasmonic gratings may have a smaller size than the mesa shape of the detector pixels. A dimension across a base of each convex polyhedron of the plasmonic gratings may be selected based on a desired resonance wavelength of the plasmonic gratings.

Abstract: A sheet space-detecting device detects a space between a rear end of a preceding first fiber reinforced plastic sheet and a front end of a following second fiber reinforced plastic sheet in a conveyance path for fiber reinforced plastic sheets and includes: a light-detecting sensor that projects detection light on an area including the rear end of the first fiber reinforced plastic sheet, the front end of the second fiber reinforced plastic sheet, and a reference surface exposed from the space and receives reflected light thereof; and a spacer that supports the rear end of the first fiber reinforced plastic sheet and the front end of the second fiber reinforced plastic sheet in a state where the rear end and the front end are separated from the reference surface, in an area including at least a light-projected area on which the detection light is projected.

Abstract: A warning receiver includes an anamorphic lens positioned to receive light within a field-of-view (FOV) defined by first and second angles that are orthogonal to each other and compress the light along the first orthogonal angle into a single line along the second orthogonal angle. A dispersive element is positioned to separate the single line of light into a plurality of wavelengths to produce a two-dimensional light field indexed by the second orthogonal angle and wavelength. A pixelated detector is positioned to receive the light field and readout electrical signals indexed by the second orthogonal angle and wavelength. A processor coupled to the pixelated detector process the electrical signals to detect and characterize an optical source within the FOV.

Abstract: A distance-measuring apparatus includes an optical window incorporating a first polarizing filter that polarizes reference light and a second polarizing filter that polarizes incident light in a direction inclined at 90 degrees relative to a polarization direction of the first polarizing filter.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a plurality of photoelectric conversion elements. The solid-state image sensor also includes a modulation layer disposed above the photoelectric conversion elements, and the modulation layer has a plurality of modulation segments. The modulation layer includes a plurality of first sub-layers and a plurality of second sub-layers having different refractive indexes. From the top view of the modulation layer, the modulation segments form a first group and a second group, and the second group is adjacent to the first group. The arrangement of the first sub-layers and the second sub-layers in the first group is different from the arrangement of the first sub-layers and the second sub-layers in the second group.

Abstract: The present invention provides a light sensor with dark current elimination. A dark current from a covered photodiode and a sensed current from a photodiode are respectively transformed to a dark voltage and a sensed voltage by a controlled integration circuit. A reverse capacitor receives the dark voltage and the sensed voltage to cancel out for each other, and outputs a corrected sensing voltage.