Patents Examined by Marc Arman
  • Strained semiconductor devices and methods of fabricating strained semiconductor devices
    Patent number: 8445965
    Abstract: A structure and method of fabricating the structure. The structure includes a first region of a semiconductor substrate separated from a second region of the semiconductor substrate by trench isolation formed in the substrate; a first stressed layer over the first region; a second stressed layer over second region; the first stressed layer and second stressed layer separated by a gap; and a passivation layer on the first and second stressed layers, the passivation layer extending over and sealing the gap.
    Type: Grant
    Filed: November 5, 2010
    Date of Patent: May 21, 2013
    Assignee: International Business Machines Corporation
    Inventors: Brent A. Anderson, Edward J. Nowak, Jed H. Rankin