Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a repeating unit having a group in which a phenolic hydroxyl group is protected with an acid-leaving group; a first photoacid generator that generates an acid having a pKa of ?2.00 to 2.00, in which in a case where the acid thus generated is a carboxylic acid, a pKa of the carboxylic acid is ?2.00 or more and less than 1.00; and a second photoacid generator that generates a carboxylic acid having a pKa of 1.00 or more.

Abstract: Provided are a curable composition including a compound represented by Formula (1) or Formula (2), a curable compound, and a solvent; a film formed of the curable composition; a near-infrared cut filter; a solid-state imaging element; an image display device; an infrared sensor; and a camera module. In the formulae, X1 to X5 each independently represent O, S, or a dicyanomethylene group, and R1 to R5 each independently represent a group represented by Formula (R2), and the like, in which at least one of R1 or R2 is the group represented by Formula (R2) and at least one of R3 or R4 is the group represented by Formula (R2).

Abstract: There is provided a manufacturing method for a cured substance, which makes it possible to obtain a cured substance having excellent breaking elongation, a manufacturing method for a laminate, including the manufacturing method for a cured substance, a manufacturing method for a semiconductor device, including the manufacturing method for a cured substance or the manufacturing method for a laminate, and there is provided a treatment liquid that is used in the manufacturing method for a cured substance. The manufacturing method for a cured substance includes a film forming step of applying a resin composition containing a precursor of a cyclization resin onto a base material to form a film, a treatment step of bringing a treatment liquid into contact with the film, and a heating step of heating the film after the treatment step, in which the treatment liquid contains at least one compound selected from the group consisting of a basic compound having an amide group and a base generator having an amide group.

Abstract: Provided is a copolymer that can be favorably used as a main chain scission-type positive resist that has excellent heat resistance and that can form a resist pattern having excellent resolution and clarity. The copolymer includes a monomer unit (A) represented by the following formula (I) and a monomer unit (B) represented by the following formula (II), and has a molecular weight distribution of 1.7 or less. In the formulae, L is a single bond or a divalent linking group, Ar is an optionally substituted aromatic ring group, R1 is an alkyl group, R2 is an alkyl group, a halogen atom, or a haloalkyl group, p is an integer of not less than 0 and not more than 5, and in a case in which more than one R2 is present, each R2 may be the same or different.

Abstract: A method includes forming a photoresist layer over a wafer. The photoresist layer is exposed to a pattern of radiation using a photomask. The photoresist layer is developed after the photoresist layer is exposed to the pattern of radiation. The photomask includes a substrate and at least one opaque main feature. The substrate has a recessed region recessed from a first surface of the substrate and has a first width. The at least one opaque main feature protrudes from the first surface of the substrate and has a second width greater than the first width of the recessed region of the substrate. A height of the at least one opaque main feature is greater than a depth of the recess region of the substrate.

Abstract: The present invention discloses a lithographic apparatus, a device manufacturing method, and a robotics system capable of specifying a trajectory to be followed by a substrate relative to a radiation beam comprising a position and/or an orientation as a function of time. The specified trajectory is characterized as a mathematical smooth function up to at least the third order which connects a first state and a second state, wherein both the first state and the second state comprise boundary values for at least the position and/or the orientation and for first and second derivatives of the position and/or orientation.

Abstract: The main mask pattern of a photomask is corrected by adding serifs of one type (inner or outer) to a pair of mutually adjacent corners in the pattern, and adding a serif of the opposite type (outer or inner) to the edge between the corners. When the photomask is used to create a resist pattern by photolithography in the fabrication of a semiconductor device, the serifs combine to produce an optical proximity correction that reduces corner rounding and increases edge straightness in the resist pattern.

Abstract: Negative-working, water-developable imageable elements, useful as printing plate precursors, and methods for their use, are disclosed. The elements can be imaged with ultraviolet radiation, with infrared radiation, or with heat. The elements contain an imageable composition that contains a latent Brönsted acid, a water-soluble or water-dispersible binder, and an acid-activated cross-linking agent.