Abstract: A photoelectric conversion device includes a plurality of unit pixels each including a charge holding portion to which charges are transferred from four or more photoelectric conversion units. Sensitivity of each photoelectric conversion unit of a first group to incident light is greater than sensitivity of each photoelectric conversion unit of a second group to the incident light. After charge accumulation is started in all the photoelectric conversion units of the second group, charge accumulation is started in the photoelectric conversion units of the first group. After signals corresponding to charges accumulated in all the photoelectric conversion units of the second group are read out, signals corresponding to charges accumulated in the photoelectric conversion units of the first group are read out.

Abstract: Image quality is to be improved in a solid-state image pickup element that performs time delay integration. A correlated double sampling circuit generates a frame in which a predetermined number of lines each including a plurality of digital signals are arranged. A TDI frame memory retains a (K?1)-th frame generated before a K-th frame. A time delay integration circuit performs time delay integration processing of adding the line having a predetermined address in the K-th frame and the line having an address at a certain distance from the predetermined address in the (K?1)-th frame.

Abstract: An integrated circuit (IC) includes an analog to digital converter (ADC) circuit having an ADC input and an ADC output. The ADC circuit is configured to receive an input signal at the ADC input and generate a digital output signal at the ADC output based on the input signal. An ADC circuit path is coupled between the ADC input and the ADC output. The ADC circuit comprises a plurality of capacitors coupled between reference voltage sources and the ADC circuit path. The ADC has a reconfigurable resolution and a reconfigurable sampling rate. The ADC circuit is configured to scale the reference voltage sources and/or the plurality of capacitors based on the reconfigurable resolution.

Abstract: There is provided an image sensor employing an avalanche diode. The image sensor includes a plurality of pixel circuits arranged in a matrix, a plurality of pulling circuits, a plurality of output circuits and a global current source circuit. Each of the plurality of pixel circuits includes a single photon avalanche diode and a P-type or N-type select switch transistor. Each of the plurality of pulling circuits is arranged corresponding to one pixel circuit column. The global current source circuit is used to form a current mirror with each of the plurality of pulling circuits. Each of the plurality of output circuits is shared by at least two pixel circuits.

Abstract: This application provides a pixel collection circuit comprising an optical-to-electrical converter circuit configured to convert a collected optical signal into an analog signal; an analog-to-digital converter circuit configured to: receive the analog signal from the optical-to-electrical converter circuit; and perform analog-to-digital conversion on the analog signal to obtain a digital signal; a differential circuit configured to: receive the digital signal from the analog-to-digital converter circuit; and obtain a difference signal between a digital signal of a previous triggering moment and the digital signal of a current triggering moment; the previous triggering moment and the current triggering moment are determined by at least a digital clock signal; a comparison circuit configured to receive the difference signal from the differential circuit, and output a pulse signal.

Abstract: An imaging device includes pixel sensors. A drive-sense circuit is configured to generating a sensed signal corresponding to one of pixel sensors. The drive-sense circuit includes: a first conversion circuit configured to convert, a receive signal component of a sensor signal corresponding to the one of the pixel sensors into the sensed signal, wherein the sensed signal indicates a change in a capacitance associated with the one of the pixel sensors; a second conversion circuit configured to generate, based on the sensed signal, a drive signal component of the sensor signal corresponding to the one of the pixel sensors. The drive-sense circuit is further configured to generate other sensed signals corresponding to other ones of the pixel sensors for the other ones of the pixel sensors. A graphics processing module is configured to generate image data based on the sensed signal and the other sensed signals.

Abstract: A photoelectric conversion device includes a photoelectric converter, a first node configured to be supplied with charges from the photoelectric converter, an amplification transistor configured to output a signal corresponding to a voltage of the first node, a first transistor configured to open/close a path between the first node and a second node not included in a path from the photoelectric converter to the first node, and a second transistor configured to open/close a path between the second node and a third node. A second capacitance which is added to the second node when the second transistor is set in a conductive state is larger than a first capacitance which is added to the first node when the first transistor is set in a conductive state.

Abstract: An integrated high-speed image sensor includes a pixel array; a processor configured to determine a region of interest (ROI) and a region of non-interest (RONI) of the pixel array; an analog signal processing circuit configured to read out ROI image data at a first frame rate and read out RONI image data at a second frame rate; and a memory storing the ROI image data and the RONI image data.

Abstract: An imaging device includes pixel sensors. At drive-sense circuit is configured to generating a sensed signal corresponding to one of pixel sensors. The drive-sense circuit includes: a first conversion circuit configured to convert, a receive signal component of a sensor signal corresponding to the one of the pixel sensors into the sensed signal, wherein the sensed signal indicates a change in a capacitance associated with the one of the pixel sensors; a second conversion circuit configured to generate, based on the sensed signal, a drive signal component of the sensor signal corresponding to the one of the pixel sensors. The drive-sense circuit is further configured to generate other sensed signals corresponding to other ones of the pixel sensors for the other ones of the pixel sensors. A graphics processing module is configured to generate image data based on the sensed signal and the other sensed signals.

Abstract: Disclosed herein is a method of operating a radiation detector, comprising for i=1, . . . , N, during a transfer period (i), electrically connecting pixel (1,i) of pixels (1,j), j=1, . . . , N of the radiation detector to a first signal processing circuit while electrically disconnecting the other N?1 pixels of the pixels (1,j), j=1, . . . , N from the first signal processing circuit; and for i=1, . . . , N, during the transfer period (i), transferring electrical signals from the pixel (1,i) to the first signal processing circuit.

Abstract: An image sensor includes a photosensitive sensor, a floating diffusion node, a reset transistor, and a source follower transistor. The reset transistor comprises a first source/drain coupled to the floating diffusion node and a second source/drain coupled to a first voltage source. The source follower transistor comprises a gate coupled to the floating diffusion node and a first source/drain coupled to the second source/drain of the reset transistor. A first elongated contact contacts the second source/drain of the reset transistor and the first source/drain of the source follower transistor. The first elongated contact has a first dimension in a horizontal cross-section and a second dimension in the horizontal cross-section. The second dimension is perpendicular to the first dimension, and the second dimension is less than the first dimension.

Abstract: A solid-state image sensor includes: an input transistor configured to output, from a drain, a drain voltage according to an input voltage input to a source in a case where the input voltage substantially coincides with a predetermined reference voltage input to a gate; and an output transistor configured to output a signal indicating whether or not a difference between the input voltage input to a source and the drain voltage input to a gate exceeds a predetermined threshold voltage as a comparison result between the input voltage and the reference voltage.

Abstract: Disclosed is a ramp signal generator including a resistance circuit coupled to a first voltage terminal and an output terminal and adjusting, according to a plurality of control signals, a resistance value applied to the output terminal, a ramp signal being output through the output terminal, and a current circuit coupled to a second voltage terminal and the output terminal and for adjusting, according to a clock signal, a current level applied to the output terminal and a change rate of the current level, wherein the plurality of control signals are generated according to an analog gain having a multiple range, and wherein the clock signal has a first frequency when the analog gain has a first range within the multiple range and has a second frequency when the analog gain has a second range within the multiple range.

Abstract: An imaging device having first and second pixels is described. The first pixel includes a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The second pixel includes a first photoelectric conversion element, a second transfer transistor, a second reset transistor, a second amplifier transistor and a second select transistor.

Abstract: The present disclosure generally relates to displaying visual effects in image data. In some examples, visual effects include an avatar displayed on a user's face. In some examples, visual effects include stickers applied to image data. In some examples, visual effects include screen effects. In some examples, visual effects are modified based on depth data in the image data.

Abstract: A ramp buffer circuit includes an input device having an input coupled to receive a ramp signal. A bias current source is coupled to an output of the input device. The input device and the bias current source are coupled between a power line and ground. An assist current source is coupled between the output of the input device and ground. The assist current source is configured to conduct an assist current from the output of the input device to ground only during a ramp event generated in the ramp signal.

Abstract: The present technology relates to a solid-state imaging device, method for driving the same, and electronic apparatus capable of avoiding an occurrence of a blackout in low-speed read-out. The solid-state imaging device includes a pixel array unit in which a plurality of pixels is two-dimensionally arranged in a matrix, and a control unit that exposes all pixels of the pixel array unit at a same exposure timing and performs thinned read-out 2(N?1) times in which all the pixels are thinned to 1/N, so as to read electric charge in all the pixels of the pixel array unit, the electric charge being generated at the same exposure timing. The present technology can be applied to, for example, a solid-state imaging device, or the like, incorporated in an imaging device.

Abstract: Provided are a pixel array and an image sensor including the same. The pixel array includes a plurality of sub-pixels adjacent to each other and a readout circuit connected to the plurality of sub-pixels through a floating diffusion node. Each of the sub-pixels includes a photoelectric conversion element, an overflow transistor connected to the photoelectric conversion element, a phototransistor connected to the photoelectric conversion element and the overflow transistor, and a storage element connected to the phototransistor.

Abstract: A solid-state imaging device includes: a plurality of pixel cells arranged in a matrix. In the solid-state imaging device, each of the plurality of pixel cells includes: a photoelectric converter that generates charge by photoelectric conversion, and holds a potential according to an amount of the charge generated; an initializer that initializes the potential of the photoelectric converter; a comparison section that compares the potential of the photoelectric converter and a predetermined reference signal, and causes the initializer to perform initialization when the potential of the photoelectric converter and the predetermined reference signal match; and a counter that counts a total number of times of initialization performed by the initializer, and outputs a signal corresponding to the total number of times as a first signal indicating an intensity of incident light.

Abstract: In an imaging device, a first digital signal corresponding to a first analog signal read out from a pixel, and a second digital signal corresponding to the amount of charge accumulated during a first exposure period following a period for reading the first analog signal. A difference is acquired between a first difference and a second difference wherein the first difference is a difference between a third digital signal and the second digital signal, the third digital signal is a digital signal corresponding to the amount of charge cumulatively accumulated during the first exposure period and a following second exposure period, and the second difference is a difference between the second digital signal and the first digital signal. At least one of the first exposure period or the second exposure period includes a period during which the first light source is in the on-state.