Abstract: A method of manufacturing a shadow mask comprises the steps of: forming photoresist films on two major surfaces of a sheet made of a shadow mask material; forming latent images by selectively exposing the photoresist films, respectively; developing the latent images to form photoresist film patterns, respectively; and spraying an etching solution for etching the shadow mask sheet having the photoresist film patterns onto the two major surfaces thereof to etch bared portions of the shadow mask sheet, wherein the photoresist film formed on one of the two major surfaces of the shadow mask sheet is thicker than that formed on the other of the two major surfaces. The step of spraying the etching solution comprises a first step and a subsequent second step, wherein an impact of the etching solution against the shadow mask sheet in the first step is greater than that in the second step.

Abstract: Oxidation inhibiting amounts of alkylated diphenyl oxide disulfonates are incorporated into photographic color developers containing primary aromatic amino color developing agents to increase clarity and inhibit the formation of tar-like precipitates in these developers. Typical disulfonates include sodium dodecyl diphenyl ether disulfonate, sodium decyl diphenyl ether disulfonate, sodium cetyl diphenyl ether disulfonate, monocetyl diphenyl ether disulfonate, dicetyl diphenyl ether disulfonate and mixtures thereof. The use of disulfonates of this type substantially eliminates the need for cosolvents such as alkanolamines to inhibit the formation of tar-like particles in the developers.

Abstract: Disclosed is a method for manufacturing a semiconductor device which comprises a process for forming a positive-type resist film and a negative-type resist film on a semiconductor substrate, a process for exposing predetermined regions of both resist films to radiation, a process for developing the upper resist film to form a first resist pattern adapted to be used as a mask for ion-implantation, a process for developing the lower resist film to form a second resist pattern opposite to the first resist pattern after peeling off the first resist pattern, and a process for treatment the semiconductor substrate using the second resist pattern as a mask.

Abstract: Disclosed is a bleaching solution or bleach-fixing solution for a light-sensitive silver halide photographic material, which comprises an oxidizing agent comprising a diethylenetriaminepentaacetic acid iron (III) complex salt, and at least one metal ion selected from the group consisting of nickel, cobalt, zinc, cerium, ruthenium, yttrium, samarium, magnesium, calcium, bismuth, strontium, manganese, aluminum, tin, barium, indium, thallium and zirconium. In another embodiment, the solution may further contain a chelating agent other than diethylenetriaminepentaacetic acid.

Abstract: Compounds of the formula ##STR1## wherein L is a direct bond or consists of a chain of carbon atoms or of a divalent ring system, R.sub.1 to R.sub.4 are hydrogen or alkyl, R.sub.5 or R.sub.6 are hydrogen, alkyl or aryl, or R.sub.5 together with R.sub.6 complete a ring system, and R.sub.7 is hydrogen or a group of the formula ##STR2## wherein L, R.sub.5 and R.sub.6 are as defined. These compounds are useful developing agents for activation processing.

Abstract: An unballasted arylhydrazide is disclosed the aryl moiety of which is substituted with a group of the formula ##STR1## where one of X and X' represents --NH--, the other represents a divalent chalcogen, and R represents an aliphatic or aromatic residue. The arylhydrazides, when applied to halftone imaging in conjunction with silver halide emulsions, photographic elements, and imaging processes, produce images of improved dot quality and low levels of pepper fog.

Abstract: A photographic silver halide light-sensitive material is described. The material includes at least one of the compounds represented by general formula (I) as described below, their salts, and their precursors releasing the compounds of general formula (I) on cleavage under alkali conditions. ##STR1## (the symbols are as defined in the appended claims). This light-sensitive material is less subject to a variation in photographic performance during the storage, in particular, the formation of fog is prevented.

Abstract: A process is disclosed of producing photographically useful radiation sensitive silver halide emulsions the grains of which are of a predetermined size distribution, including selection of maximum and minimum grain diameters and selection of the distribution of grains of maximum, minimum, and intervening diameters. This is achieved by modifying a double jet precipitation to introduce during the run stable silver halide grains capable of acting as host grains for the deposition of additional silver and halide ions. The degree to which the host grains initially introduced are grown determines the maximum grain diameter of the emulsion. The minimum diameter of the grains in the emulsion produced can be determined by the diameter of the stable silver halide grains introduced at the end of the run. The rate at which the stable host grains are introduced during the run controls the distribution of intervening grain sizes.

Abstract: The bleaching from photographic elements of silver produced by the development of silver halide having a dye adsorbed to its surface by employing as a bleaching agent a ferric complex of a polycarboxylic acid is improved by the presence of a compound of the formula: ##STR1## wherein Ar is an aromatic linking group,R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are hydroxy substituted lower alkyl groups,R.sup.5 and R.sup.6 are lower alkanediyl groups,X is a charge balancing counter ion,x and y are 0 or 1, andz is 0, 1, or 2.

Abstract: A color image forming method wherein a colored, water soluble polymer and a photo-sensitive polymerization initiator are layered upon a transparent base material, exposed to light through a negative original, washed with water to remove unpolymerized material, proofed, and then dyed to an optical density of at least 2.5.

Abstract: A lithographic mask is corrected by ion beam removal of material at the location of a defect after the mask is initially formed. In the case of defects due to excess material (opaque defects), the ion beam removes the excess opaque material. In the case of pinholes (clear defects), the substrate (typically glass) is rendered opaque. The ion beam may be used for imaging the defect, typically by detection of secondary electrons or photons emitted where the ion beam impinges on the mask. Optical masks (visible, ultraviolet) and X-ray masks, among others, can be corrected.

Abstract: Liquid electrographic developers are disclosed comprising an electrically insulating liquid carrier, toner, a charge-control agent and a charging agent. The charge-control agent is a carrier-soluble, addition copolymer of a quaternary ammonium salt monomer, a monomer having --COOH, --SO.sub.3 H or --PO.sub.3 HR acidic function wherein R is hydrogen or alkyl, and a solubilizing monomer. The charging agent is a carrier-soluble, addition polar copolymer. The disclosed developers exhibit improved replenishability as evidenced by reduced buildup of charge in the developers during the course of use and repeated replenishment.

Abstract: A positive-working photoresist composition is described comprising a solution of polyvinyl alcohol, an inorganic ferric salt, ammonium trioxalatoferrate and a diol such as 1,4-butanediol. There is also described the addition of a finely divided black pigment to such a composition and the use of such a black pigmented composition for the formation of a light-absorbing matrix in a color CRT screen structure.

Abstract: There is disclosed a method for processing of a light sensitive silver halide color photographic material characterized by carrying out, after an image exposure of the material, a development processing of the material in the presence of the following components (A), (B), and (C) and/or (D):(A) an aromatic primary amine color developing agent compound;(B) a manganese salt and/or a cerium salt;(C) a diphosphonic acid sequestering agent and a magnesium salt and/or a lithium salt; and(D) at least one of the sequestering agent selected from the group consisting of the compounds represented by the formulas (I), (II), (III), (IV) and (V) found in the specification.

Abstract: A heat-developable photographic material comprising (a) an organic silver salt, (b) a photocatalyst, (c) a reducing agent, (d) a binder, and (e) at least one compound selected from the compound represented by the general formula (I) described below and the compound represented by the general formula (II) described below. ##STR1## wherein X represents a halogen atom; and R represents a hydrogen atom, an alkyl group, an aryl group, an aralkyl group, an acyl group, a carbamoyl group, an alkylsulfonyl group, an arylsulfonyl group, an aralkylsulfonyl group or a heterocyclic residue, ##STR2## wherein X represents a halogen atom; Z represents a sulfur atom, an oxygen atom or >N--R.sub.1 (wherein R.sub.1 represents an alkyl group, an aryl group or an acyl group; (R')n represents a substituent present on the benzene nucleus; and n represents 0 or an integer from 1 to 4.

Abstract: A method for providing very narrow resolvable line widths on a semiconductor substrate surface involves initial overexposure of a positive working photoresist through a mask so as to not only expose the portions of the photoresist corresponding to the transparent areas of the mask but to also expose the outer periphery of the photoresist areas corresponding to the opaque areas of the mask. Through subsequent processing, the areas of the substrate surface corresponding to the originally unexposed areas of the photoresist are made available for use in semiconductor fabrication, such as areas to be oxidized to function as narrow electrical isolation areas.

Abstract: A photographic element for use in a method of multicolor image formation by tanning development is a layered structure comprising an optionally primed base support, a layer of colloidal silver, a layer of sensitized silver halide emulsion in gelatin free of hardener, and at least one colored pigment or dye dispersed therein which absorbs radiation.

Abstract: A method for protecting the recording surfaces of optical data storage and recording tape provides the tape edges with protuberances formed by plastic coatings, embossments or thickness gradients of the recording material.

Abstract: A process for processing a color photographic silver halide light-sensitive material comprising processing the color photographic silver halide light-sensitive material with a color developer containing at least one compound represented by the general formula (I): ##STR1## wherein X is a hydrogen atom, an alkali metal atom, an ammonium group, an alkyl group, or an aryl group; Y is a substituent on the phenyl group and is a halogen atom, an alkyl group, an alkoxy group, an amino group, a hydroxyl group, a nitro group, a sulfonic acid group or a carboxylic acid group; and n is 0, 1, 2, 3 or 4. Color developers containing the compounds of the general formula (I) have greatly increased stability and thus even after long-term storage, can be used to produce developed materials having superior photographic properties.

Abstract: A method of making a high performance, small area thin film transistor having a drain region, an insulating layer, and a source region forming a non-coplanar surface with respect to a substrate is disclosed. The insulative layer is formed in between the source and drain regions. A deposited semiconductor overlies the non-coplanar surface to form a current conduction channel between the drain and source. A gate insulator and gate electrode overly at least a portion of the deposited semiconductor adjacent thereto. The non-coplanar surface can be formed by utilizing a dry process to simultaneously etch through several layers in a continuous one-step process. A second dielectric layer may be formed above the three previous layers. This decouples the gate electrode from the source region by creating two capacitances in series, thereby limiting the capacitance between the gate electrode and the source region.