Abstract: It is an object of the present invention to provide a manufacturing method of a semiconductor device where a semiconductor element is prevented from being damaged and throughput speed thereof is improved, even in a case of thinning or removing a supporting substrate after forming the semiconductor element over the supporting substrate.
Type:
Grant
Filed:
September 18, 2006
Date of Patent:
April 19, 2011
Assignee:
Semiconductor Energy Laboratory Co., Ltd.