Patents Examined by Mary Wllczewski
  • Methods of forming ruthenium film by changing process conditions during chemical vapor deposition and ruthenium films formed thereby
    Patent number: 6750092
    Abstract: A ruthenium (Ru) film is formed on a substrate as part of a two-stage methodology. During the first stage, the Ru film is formed on the substrate in a manner in which the Ru nucleation rate is greater than the Ru growth rate. During the second stage, the Ru film is formed on the substrate in a manner in which the Ru growth rate is greater than the Ru nucleation rate.
    Type: Grant
    Filed: December 21, 2000
    Date of Patent: June 15, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seok-jun Won, Cha-young Yoo