Abstract: In a lithographic projection apparatus, a structure surrounds a space between the projection system and a substrate table of the lithographic projection apparatus. A gas seal is formed between said structure and the surface of said substrate to contain liquid in the space.

Abstract: A radiation source for a lithographic apparatus, in particular a laser-produced plasma source includes a fan unit surrounding but not obstructing the collected radiation beam that is operated to generate a flow in a buffer gas away from the optical axis. The fan unit can include a plurality of flat or curved blades generally parallel to the optical axis and driven to rotate about the optical axis.

Abstract: One embodiment relates to a spatial light modulator unit comprising: a spatial light modulator with a plurality of optical elements; a spatial light modulation element applying spatial light modulation to the incident light and making rays of intensity levels according to positions of the respective optical elements; and a control unit.

Abstract: A method for transferring a fractured pattern decomposed into elementary shapes, onto a substrate by direct writing by a particle or photon beam, comprises a step of identifying at least one elementary shape of the fractured pattern, called removable elementary shape, whose removal induces modifications of the transferred pattern within a preset tolerance envelope; a step of removing the removable shape or shapes from the fractured pattern to obtain a modified fractured pattern; and an exposure step, comprising exposing the substrate to a plurality of shots of a shaped particle or photon beam, each shot corresponding to an elementary shape of the modified fractured pattern. A computer program product for carrying out such a method is provided.

Abstract: Disclosed is a metrology apparatus for measuring a parameter of a lithographic process, and associated computer program and method. The metrology apparatus comprises an optical system for measuring a target on a substrate by illuminating the target with measurement radiation and detecting the measurement radiation scattered by the target; and an array of lenses. Each lens of the array is operable to focus the scattered measurement radiation onto a sensor, said array of lenses thereby forming an image on the sensor which comprises a plurality of sub-images, each sub-image being formed by a corresponding lens of the array of lenses. The resulting plenoptic image comprises image plane information from the sub-images, wavefront distortion information (from the relative positions of the sub-images) and pupil information from the relative intensities of the sub-images.

Abstract: Provided are a pellicle for a photomask, which protects the photomask from external contamination and an exposure apparatus including the pellicle for the photomask. The pellicle for the photomask includes a pellicle membrane provided spaced apart from the photomask. The pellicle membrane includes a semiconductor having a two-dimensional (2D) crystalline structure.

Abstract: An immersion lithography apparatus includes a projection system having a last optical element, a plurality of liquid supply openings that surround a path of exposure light that exits an end surface of the last optical element and face downwardly, and a plurality of liquid recovery openings that surround the path of the exposure light, are arranged radially outward of the liquid supply openings, and face downwardly. An upper surface of a substrate is opposite to the liquid supply openings and the liquid recovery openings. A portion of the upper surface of the substrate is covered with immersion liquid, which flows across the end surface of the last optical element. The substrate is exposed with the exposure light through the immersion liquid between the end surface of the last optical element and the upper surface the substrate.

Abstract: A method of forming patterns is provided. The method includes forming a resist layer on a substrate, forming a lattice-shaped extrusion barrier region in the resist layer to define pattern transfer regions corresponding to a plurality of separate windows, and positioning a template on the resist layer so that a patterned surface of the template faces the resist layer. The patterned surface provides a plurality of transfer patterns. The template is pressed to perform an imprint step for embedding the transfer patterns of the template into the pattern transfer regions of the resist layer.

Abstract: Disclosed herein is a decompression processing apparatus for processing a wafer in a decompressed state including a chamber having a decompressing unit configured to decompress the inside of the chamber, an opening and closing door configured to open and close a carrying-in-and-out opening for carrying the wafer into and out of the chamber, and an inert gas supply source configured to supply an inert gas to the inside of the chamber. The inside of the chamber is maintained in a dry state by continuing to supply the inert gas in a state in which the opening and closing door is opened.

Abstract: Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus comprising a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly, the wafer stage comprising a seal ring disposed on a seal ring frame along a top edge of the wafer retained on the wafer stage, the seal ring for sealing a gap between an edge of the wafer and the wafer stage. The embodiment further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid and a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank.

Abstract: The invention relates to a projection exposure apparatus for semiconductor lithography, comprising an illumination system for illuminating a mask arranged on a movable mask stage, and comprising a projection lens for imaging the mask onto a semiconductor substrate, wherein at least one means is present for at least partly decoupling at least parts of the illumination system and/or of the projection lens from the influence of pressure fluctuations in the medium surrounding the projection lens or the illuminated system, the pressure fluctuations being attributed to movements of the mask stage during the operation of the apparatus.

Abstract: A lithography system includes a radiation source configured to generate an extreme ultraviolet (EUV) light. The lithography system includes a mask that defines one or more features of an integrated circuit (IC). The lithography system includes an illuminator configured to direct the EUV light onto the mask. The mask diffracts the EUV light into a 0-th order ray and a plurality of higher order rays. The lithography system includes a wafer stage configured to secure a wafer that is to be patterned according to the one or more features defined by the mask. The lithography system includes a pupil phase modulator positioned in a pupil plane that is located between the mask and the wafer stage. The pupil phase modulator is configured to change a phase of the 0-th order ray.

Abstract: The present disclosure provides an apparatus. The apparatus comprises a field generator, configured to produce a field shield protecting a reticle from foreign particles.

Abstract: The present disclosure relates to techniques for supplying different chemical products to process tools of a manufacturing environment used for micro-processing substrates. To this end, the various types of chemical products may be supplied by providing mobile dispense devices having incorporated therein any required hardware components for dispensing a chemical product. Moreover, the mobile dispense devices are appropriately equipped so as to enable coupling to and removal from respective process tools, such as wafer tracks of modern lithography tools. Due to the mobile or modular nature of the respective chemical product lines, a significant reduction of cost of ownership, increased tool availability and reduced investment costs may be achieved compared to conventional regimes.

Abstract: A lithographic apparatus comprising a projection system, and a liquid confinement structure configured to at least partly confine immersion liquid to an immersion space defined by the projection system, the liquid confinement structure and a substrate and/or substrate table is disclosed wherein a measure is taken to reduce the effect of droplets and/or a liquid film on the last element of the projection system.

Abstract: An illumination system for an optical arrangement such as an EUV lithography apparatus, having: at least one optical element which has at least one optical surface, on which a coating which reflects illumination radiation is applied, and an actuator device aligning the optical surface in at least two angular positions in the radiation path. The coating either has a thickness (dOPT1) at which a mean value (½(R1+R2)) formed from a thickness-dependent reflectivity (R1, R2) of the coating at the at least two angular positions is maximized or has a thickness (dOPT2) at which a maximum change (max(?R1/R1, ?R2/R2)) in the reflectivity (R1, R2) caused by a thickness tolerance of the coating is minimized at the respective angular positions or else the reflecting coating has a thickness (dO2) at which the reflectivity (R1, R2) of the coating has the same magnitude in the at least two angular positions.

Abstract: A controller of an exposure apparatus (1) controls a second drive system so that scanning exposure is performed via a projection optical system and liquid of a liquid immersion area, from an area located on one side in a first direction, of a plurality of areas of a substrate held by a second stage that is placed facing the projection optical system and (ii) controls the second drive system so that a third stage comes close to the second stage from the other side in the first direction, and the second and the third stages that have come close together move from the other side to the one side in the first direction in order to place the third stage to face the projection optical system instead of the second stage while substantially maintaining the liquid immersion area under the lens.

Abstract: A method of determining a process window for a lithographic process, the process window describing a degree of acceptable variation in at least one processing parameter during the lithographic process. The method includes obtaining a set of output parameter values derived from measurements performed at a plurality of locations on a substrate, following pattern transfer to the substrate using a lithographic process, and obtaining a corresponding set of actual processing parameter values that includes an actual value of a processing parameter of the lithographic process during the pattern transfer at each of the plurality of locations. The process window is determined from the output parameter values and the actual processing parameter values. This process window may be used to improve the selection of the processing parameter at which a subsequent lithographic process is performed.

Abstract: A lithographic apparatus including: a projection system with an optical axis; an enclosure with an ambient gas; and a physical component accommodated in the enclosure, wherein: the lithographic apparatus is configured to cause the physical component to undergo movement relative to the enclosure, in a predetermined direction and in a plane perpendicular to the optical axis; the lithographic apparatus is configured to let the physical component maintain a predetermined orientation with respect to the enclosure during the movement; the movement induces a flow of the ambient gas relative to the component; the physical component has a surface oriented perpendicularly to the optical axis; the component includes a flow direction system configured to direct the flow of ambient gas away from the surface.

Abstract: An optical component for a projection exposure apparatus includes a multiplicity of variably positionable beam-guiding elements which serve as pupil facets. The optical component can be arranged in the beam path of the projection optical unit.