Abstract: A calibration system includes a plate, a fixed alignment mark, and a variable diffraction grating. The plate is adjacent to a wafer alignment mark disposed on a wafer. The fixed alignment mark is disposed on the plate and is configured to act as a reference mark for an initial calibration of the calibration system. The variable diffraction grating is disposed on the plate and includes a plurality of unit cells configured to form a plurality of variable alignment marks. The variable diffraction grating is configured to calibrate a shift-between-orders of one of the variable alignment marks and the fixed alignment mark.

Abstract: The present invention provides a conveyance apparatus that conveys an object to a processing space in which processing is performed using the object, including a hand configured to hold the object, and a moving unit configured to freely move the hand in the processing space, wherein the hand includes a suction hole provided in a surface different from a holding surface configured to come into contact with the object and hold the object, and a first flow path configured to allow the suction hole and an exhaust source to communicate with each other, and exhaust an atmosphere around the suction hole sucked via the exhaust source and the suction hole to an outside.

Abstract: An EUV photolithography system utilizes a baseplate of an EUV pod to unload an EUV reticle from a chuck within an EUV scanner. The baseplate includes a top surface and support pins extending from the top surface. The when the reticle is unloaded onto the baseplate, the support pins hold the reticle at relatively large distance from the top surface of the baseplate. The support pins have a relatively low resistance. The large distance and low resistance help ensure that particles do not travel from the baseplate to the reticle during unloading.

Abstract: As feature sizes of semiconductor chips shrink there is a need for tighter overlay between layers in a lithography process. This means more advanced and larger overlay corrections may be necessary to ensure that die are properly manufactured into chips, especially in reconstituted substrates where the die can shift in the process of creating the substrate. Systems and methods for correcting these overlay errors in a lithographic process are provided. Additional rotation (theta) and projected image size (mag) corrections can be made to correct overlay errors present in reconstituted substrates by adjusting the stage and the reticle. Furthermore, these adjustments can be made allowing site-by-site or zone-by-zone corrections instead of a one-time adjustment of the reticle chuck as has been done in the past. These corrections can alleviate some of the issues associated with fan-out wafer-level packaging (FOWLP) and fan-out panel-level packaging (FOPLP).

Abstract: In situ dynamic protection of an optical element surface against degradation includes disposing the optical element in an interior of an optical assembly for the FUV/VUV wavelength range and supplying at least one volatile fluorine-containing compound (A, B) to the interior for dynamic deposition of a fluorine-containing protective layer on the surface. The protective layer (7) is deposited on the surface layer by layer via a molecular layer deposition process. The compound includes a fluorine-containing reactant (A) supplied to the interior in a pulsed manner. A further reactant (B) is supplied to the interior also in a pulsed manner. An associated optical assembly includes an interior in which a surface is disposed, and at least one metering apparatus (123) that supplies a reactant to the interior. The metering apparatus provides a pulsed supply of the compound as a reactant (A, B) for layer by layer molecular layer deposition.

Abstract: Embodiments of a photomask removal apparatus for removing photoresist off of a photomask are provided herein. In some embodiments, a nozzle head for removing photoresist off of a photomask includes: a nozzle portion having a first side and an opposing second side and a flow path extending from the first side to the second side, wherein the flow path includes an orifice disposed between the first side and the second side and a nozzle that extends from the orifice to a nozzle exit on the second side, and wherein the flow path in the nozzle increases in width at an angle from the orifice to the second side; and a vacuum portion coupled to the nozzle portion, wherein the vacuum portion includes a first side and an opposing second side that faces the nozzle exit, wherein the vacuum portion includes a vacuum port extending from the second side.

Abstract: Provided is a method of fabricating a micro-nano structure, including: forming a reflective layer and a fluid polymer layer sequentially on a surface of a substrate; pressurizing the substrate and a mask having a micro-nano pattern to attach to each other, squeezing the fluid polymer layer into a light-transmission area of the mask, and curing the fluid polymer layer; and exposing, wherein a fluid polymer in the light-transmission area is configured to sense light under a combined effect of a transmitted light and a light reflected by the reflective layer, such that a micro-nano structure is obtained. The method solves the problem of limited diffraction, improves the processing resolution by reducing the transmission loss of evanescent waves through reflective light field enhancement, and reduces the difficulty and cost of mask processing and pattern defects by using shallow pressurizing in combination with exposure.

Abstract: An imprint apparatus brings an imprint material on a substrate including a first mark into contact with a mold including a second mark and cures the imprint material, thereby forming a cured product of the imprint material on the substrate. The apparatus includes a plurality of detectors used for alignment detection, and a controller configured to obtain a plurality of pieces of relative position information by detecting a relative position between the first mark and the second mark a plurality of times using the plurality of detectors in a state in which the imprint material is cured and a positional relationship between the substrate and the mold is maintained, and to calibrate, based on the plurality of pieces of relative position information, a plurality of detection processing operations each performed using each of the plurality of detectors.

Abstract: An apparatus for treating a substrate includes a processing container having an inner space; a support unit having a support plate configured to support and rotate the substrate in the inner space; a liquid supply unit configured to supply treating liquid to the substrate supported by the support unit; and an exhaust unit configured to exhaust an air flow in the inner space, wherein the exhaust unit includes an air flow guide duct guiding a flow direction of an air flow flowing on the substrate to an outer side of the substrate due to a rotation of the substrate supported by the support unit, and the air flow guide duct having an inlet into which an air flow is introduced, the inlet provided at a substantially same level with the substrate supported by the support unit.

Abstract: Methods of forming structures including a stress management layer for photolithography and structures including the stress management layer are disclosed. Further disclosed are systems for depositing a stress management layer. Exemplary methods include forming the stress management layer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition.

Abstract: A substrate processing apparatus includes a processing chamber providing a processing space for processing a substrate and processing a substrate, a substrate support configured to support the substrate, a blocking plate below the substrate support and configured to prevent supercritical fluid from being directly sprayed onto the substrate, a first supply device configured to supply supercritical fluid under a first condition to the processing chamber, a second supply device configured to supply supercritical fluid under a second condition at a higher temperature than that of supercritical fluid under the first condition to the processing chamber, a discharge device configured to discharge supercritical fluid from the processing chamber, and a control device configured to control operations of the first supply device, the second supply device, and the discharge device. The control device is configured to direct the first supply device to supply supercritical fluid prior to the second supply device.

Abstract: A method for producing a protective buffer flow in an EUV light source and an EUV mask inspection apparatus are provided. The method includes directing light along a light path from the EUV light source toward a collector. A first buffer gas from a buffer gas injector is injected through a plurality of through holes in the collector. The first buffer gas is directed away from a surface of the collector. A second buffer gas is injected from a ring manifold arranged peripherally to the collector and arranged a first distance toward the light path in relation to the collector. The second buffer gas is directed away from the surface of the collector. The first distance corresponds to a distance from the collector where the first buffer gas merges into a single flow.

Abstract: The present disclosure is directed to a system and method configured for curing non-reactive photopolymer collected by an absorbent blotting material during thermal processing of flexographic printing elements. Uncured non-reacted portions of the photopolymer are removed by contacting the one or more layers of photopolymer with the web of absorbent blotting material at an elevated temperature to soften or liquefy the uncured non-reacted portions of the one or more layers of photopolymer and absorb the softened or liquefied uncured non-reacted portions into the absorbent web of absorbent blotting material. The web of absorbent blotter material containing the absorbed softened or liquefied non-reacted portions of the photopolymer is exposed to actinic radiation from the one or more UV light sources to crosslink and cure the softened or liquefied non-reacted portions of the photopolymer.

Abstract: A method of manufacturing an integrated circuit (IC) device includes forming a photoresist layer on a substrate, and exposing the photoresist layer to light by using a photolithographic apparatus including a light generator. The light generator includes a chamber having a plasma generation space, an optical element in the chamber, and a debris shielding assembly between the optical element and the plasma generation space in the chamber, and the debris shielding assembly includes a protective film facing the optical element and being spaced apart from the optical element with a protective space therebetween, the protective space including an optical path, and a protective frame to support the protective film and to shield the protective space from the plasma generation space.

Abstract: A reticle enclosure includes a base including a first surface, a cover including a second surface and coupled to the base with the first surface facing the second surface. The base and the cover form an internal space that includes a reticle. The reticle enclosure includes restraining mechanisms arranged in the internal space and for securing the reticle, and structures disposed adjacent the reticle in the internal space. The structures enclose the reticle at least partially, and limit passage of contaminants between the internal space and an external environment of the reticle enclosure. The structures include barriers disposed on the first and second surfaces. In other examples, a padding is installed in gaps between the barriers and the first and second surfaces. In other examples, the structures include wall structures disposed on the first and second surfaces and between the restraining mechanisms.

Abstract: A system and method for shaping a film on a partial field including determining an initial contact point. Receiving information about: a partial field of a substrate; and an edge of a patternable area of the substrate. Determining a chord that connects intersection vertices of the partial field and the edge. Determining coordinates of a bisecting line, wherein the bisecting line bisects the chord, and the bisecting line is orthogonal to the chord. Determining an initial contact point range on the bisecting line in which a template and formable material on the substrate contact each other. Contacting the formable material in the partial field on the substrate with the template at an initial contact point within the initial contact point range.

Abstract: A lithographic apparatus and associated method of controlling a lithographic process. The lithographic apparatus has a controller configured to define a control grid associated with positioning of a substrate within the lithographic apparatus. The control grid is based on a device layout, associated with a patterning device, defining a device pattern which is to be, and/or has been, applied to the substrate in a lithographic process.

Abstract: A droplet catcher system of an EUV lithography apparatus is provided. The droplet catcher system includes a catcher body, a heat transfer part, a heat exchanger, and a controller. The catcher body has an outer surface. The heat transfer part is directly attached to the outer surface of the catcher body. The heat exchanger is thermally coupled to the heat transfer part. The controller is electrically coupled to the heat exchanger.

Abstract: Aspects of disclosure provide a method for attaching wiring connections to a component using both design and field measured data of the component to produce accurate wiring connections.

Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.